Q:As to the wafer dicing – is it possible to get a non-rectangular dicing? such as 6mm x 8mm size?
A:No problem, any size is workable.
Q:As to the wafer dicing – is it possible to get a non-rectangular dicing? such as 6mm x 8mm size?
A:No problem, any size is workable.
Q: Is it possible to use 4” non-patterned sapphire for fabrication? A:Not possible, currently all the manufacturers swift to patterned sapphire based wafer, including us, however if you really need flat sapphire based wafer, we we can offer 2″ size.
Q:Our application is for microwave annealing. Therefore, the silicon carbide must be able to absorb microwaves? A:Since the dielectric constant of 6H and 4H are large, so if SiC wafer is as absorbing materials, mainly to achieve through the structure design of Electromagnetic match.I don’t [...]
Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers? A: Our Nitrogen dopant concentration is 1E18/cm3-1E19/cm3, which belongs to heavy dopant.
Q: I am not sure whether practically LLO can be done on the PSS given it is not a flat surface A: “laser lift-off” actually is according to “NL layer” as below image. If the NL layer is GaN layer, when it is heating to constant high [...]
PAM-XIAMEN can supply GaAs wafer with EPD less than 5000/cm2. Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI c doped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, [...]
Q:Our application will be making micro-pillar arrays based on the MQWs for high brightness LEDs and its wavelength tuning. So we do not really care the emission wavelength you provide but we will mind whether the process and emission wavelength would be consist between [...]
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