Au/Cr coated SiO2/Si substrate

Au/Cr coated SiO2/Si substrate

PAM XIAMEN offers high-quality Au/Cr coated SiO2/Si substrate.

Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate , 6″x0.675 mm,1sp P-type B-doped, Au(111)=150 nm, Cr=20nm
Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Cr=5 nm
Au( highly oriented polycrystalline)/Cr coated SiO2/Si substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=150 nm, Cr=20nm
Au( highly oriented polycrystalline)/Ti/ SiO2 on Si substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Ti=2 nm ,SiO2=300nm
Au(Gold)/Ti(Titanium) Coated Microscope Slides,Gold layer thickness: 100nm,Glass slide: 75 x 25×1.1mm, purity of Au: 4N5
Au(Gold)/Ti(Titanium) Coated Microscope Slides,Gold layer thickness: 50nm (+/- 5nm),Glass slide: 75 x 25×1.1mm, purity of Au: 4N5
ZnO/Au/Cr coated Si substrate ,4″x0.525 mm,1sp P-type B-doped,(ZnO=150nm,Au=150nm,Cr=20-40nm)

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

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