PAM XIAMEN offers Silicon Ingots.
Material Description
FZ 2″Ø×38mm ingot, p-type Si:B[100]±2º, Ro:~2,900Ohmcm
FZ 2″Ø×(392+342+304+263+250+175)mm ingots, p-type Si:B[111]±2º, (2,000-5,000)Ohmcm
FZ 2″Ø×(100+87+86+85+85+84)mm ingots, n-type Si:P[111], (2,000-4,000) {2,166-3,835} Ohmcm
FZ 2″Ø×26mm ground ingot, n-type Si:P[111]±2º, (5,000-13,000)Ohmcm, MCC Lifetime>1,100μs
FZ 2″Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, Ground, (6 ingots: 154mm, 117mm, 143mm, 100mm, 101mm, 100mm)
FZ 2″Ø×(160+98)mm ingots, Intrinsic Si:-[111]±2º, Ro>12,000 [...]
2019-03-08meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
FZ NTD 3″Ø ingot n-type Si:P[111] ±2°, Ro: 50-60 Ohmcm, MCC Lifetime>400μs, (2 ingots: 197mm, 277mm) SEMI
FZ 8″Ø ingot n-type Si:P[100] ±2.0°, Ro: 163-174 Ohmcm, MCC Lifetime>14581μs, (1 ingot: 83mm)
FZ 6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 Ohmcm, MCC Lifetime>1777μs,
FZ 6″Ø ingot p-type [...]
2019-03-08meta-author
InGaN epi-wafers
PAM-XIAMEN offers InGaN epi-wafers with MQWs as follows:
2-inch GaN epi-wafers – PAM190611-LED
Orientation
C(0001) 0.2±0.1 grad. to m-axis (right relative to the OF);
0±0.25 grad. to a-axis (drawing)
Diameter
50.8±0.15 mm
Thickness
430±10 um
Substrate profile:
—
Shape
Cone
Width
2.7 um
Height
1.7 um
Step
0.3 um
Front side
Polished, epi-ready (Ra<0.3 nm)
Back side
polished 1.0um
Grade
optical
OF length
16±1 mm
OF orientation
a-axis ±0,25 grad
Bow
< [...]
2020-07-14meta-author
AlInP/GaAs epi wafer
We can offer 2″ AlInP/GaAs epi wafer as follows:
2” AlInP epi layer: epi layer:1-3um,
GaAs substrate:2”size,orientation (100) or (110), n type or semi-insulating, thickness:300-500um, single side polished.
Example QE measurement of a triple-junction solar cell:
SOURCE:PAM-XIAMEN
For more information, please visit our website:www.powerwaywafer.com, send us email [...]
In Q4 Discount prices for Universities and Research Institutes
We are pleased to inform that PAM-XIAMEN announces the introduction of special Q4 discount prices for universities and research institutes for small size GaN C-plane with n-type and semi-insulating wafers, which are currently on the company’s [...]
2012-10-18meta-author
Antireflection-Coated Blue GaN Laser Diodes in an External Cavity and Doppler-Free Indium Absorption Spectroscopy
Commercially available GaN-based laser diodes were antireflection coated in our laboratory and operated in an external cavity in a Littrow configuration. A total tuning range of typically 4 nm and an [...]
2013-04-01meta-author
