Au (highly oriented polycrystalline)/Ti/SiO2/Si substrate

  • Home
  • News
  • Au (highly oriented polycrystalline)/Ti/SiO2/Si substrate

PAM XIAMEN offers Au (highly oriented polycrystalline)/Ti/SiO2/Si substrate: PAM-191005-SI/SIO2/TI/AU: Au( highly oriented polycrystalline)/Ti/ SiO2 on Silicon substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Ti=2 nm ,SiO2=300nm

Specifications Au/Ti/SiO2/Si substrate:
1.Structure: Au/Ti/ SiO2 on Si substrate 

Flim thickness:
Au(111)=50 nm
Ti=2 nm
SiO2=300 nm

2.Substrate spec:

Material:Si substrate
Size: 4″ dia.
Orientation:(100)
Type:P type
Dopant:B doped
Thickness:525 um
Grade: Prime Grade
Resistivity: 1-20 ohm.cm
Polish condition: one side polished, epi-ready
Surface roughness:      Ra< 1nm
Maximum Thermal Budget of Au film:  below 200 degree C

please send us email at victorchan@powerwaywafer.com for more information.

2019-04-26

Share this post

Related Posts

GaN on SiC for RF

PAM XIAMEN offers GaN on SiC for RF. 1. GaN HEMT Wafer on SiC for RF Application Wafer size 2”, 3”, 4”, 6” AlGaN/GaN HEMT structure Refer 1.2 Carrier density 6E12~2E13 cm2 Hall mobility 1300~2200 cm2v-1s-1 XRD(102)FWHM – XRD(002)FWHM – Sheet Resistivity 200~450 ohm/sq AFM RMS (nm）of 5x5um2 <0.25nm Bow(um) <=35um Edge exclusion <2mm SiN passivation layer 0~30nm GaN cap layer 2nm Al composition 20-30% In composition xx% for InAlN AlGaN  / AlN interlayer / GaN channel / Fe [...]

2019-05-17meta-author
Optimisation of the epi-ready semi-insulating GaAs wafer preparation procedure

The surface quality is crucial for growth of epitaxial layers on III–V semiconductor substrates. In this work the procedures of epi-ready semi-insulating (SI) GaAs wafer preparation were developed. The atomic force microscopy (AFM), triple crystal X-ray diffraction (TCD) and X-ray photoelectron spectroscopy (XPS) were used [...]

2013-08-28meta-author
A comparative study of the bonding energy in adhesive wafer bonding

A comparative study of the bonding energy in adhesive wafer bonding Adhesion energies are determined for three different polymers currently used in adhesive wafer bonding of silicon wafers. The adhesion energies of the polymer off-stoichiometry thiol-ene-epoxy OSTE+ and the nano-imprint resist mr-I 9150XP are determined. [...]

2018-07-17meta-author
Sony and Apple’s Micro-LED Display Market Strategy

Sony and Apple’s Micro-LED Display Market Strategy Sony and Apple are the key to promoting micro-LED displays on the market, but the two have diverged in display developments. The Japanese company is making large micro-LED displays, and Apple small displays, but why have both chosen micro-LEDs? [...]

2016-08-22meta-author
Aberration-corrected transmission electron microscopy analyses of GaAs/Si interfaces in wafer-bonded multi-junction solar cells

Highlights •Aberration-corrected TEM and EELS reveal structural and elemental profiles across GaAs/Si bond interfaces in wafer-bonded GaInP/GaAs/Si – multi-junction solar cells. •Fluctuations in elemental concentration in nanometer-thick amorphous interface layers, including the disrubutions of light elements, are measured using EELS. •The projected widths of the interface layers [...]

2015-05-19meta-author ,
YIG single crystal substrate

PAM XIAMEN offers YIG single crystal substrate. YIG single crystal substrate, one side polished, (111), 5 mm dia. x 0.5 mm YIG single crystal substrate, two sides polished, (111), 5 mm dia. x 0.35 mm For more information, please visit our website: https://www.powerwaywafer.com, send [...]

2019-05-21meta-author