Au (highly oriented polycrystalline)/Ti/SiO2/Si substrate

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Au (highly oriented polycrystalline)/Ti/SiO2/Si substrate

PAM XIAMEN offers Au (highly oriented polycrystalline)/Ti/SiO2/Si substrate: PAM-191005-SI/SIO2/TI/AU: Au( highly oriented polycrystalline)/Ti/ SiO2 on Silicon substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Ti=2 nm ,SiO2=300nm

Specifications Au/Ti/SiO2/Si substrate:
1.Structure: Au/Ti/ SiO2 on Si substrate 

Flim thickness:
Au(111)=50 nm
Ti=2 nm
SiO2=300 nm

2.Substrate spec:

Material:Si substrate
Size: 4″ dia.
Orientation:(100)
Type:P type
Dopant:B doped
Thickness:525 um
Grade: Prime Grade
Resistivity: 1-20 ohm.cm
Polish condition: one side polished, epi-ready
Surface roughness:      Ra< 1nm
Maximum Thermal Budget of Au film:  below 200 degree C

please send us email at victorchan@powerwaywafer.com for more information.

2019-04-26

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