PAM-H01 series are CZT crystal based hemispherical detectors which have a special structure. They can detect X-ray and middle to high energy γ-ray in a high energy resolution.
CZT Asymmetry Detector
1. CZT Hemispherical Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
5.5×5.0mm2
10.0×10.0mm2
Thickness
2.75mm
5.0mm
Electrode material
Au
Operation temperature
-20℃-+40℃
Energy range
10KeV~3MeV
Energy resolution(22℃)
<3%@662MeV
Peak-compton ratio
>3
>5
Storage temperture
10℃~40℃
Storage humidity
20%-80%
Remarks
Customized available
2. CZT Crystal [...]
2019-04-24meta-author
PAM XIAMEN offers Polished silicon slab.
Size: 90X200mm
Thickness: 9±1mm
2 polished face 90 x 200mm
Flatness <1um
TTV <5um
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-08-22meta-author
Silicon carbide (SiC) is a compound semiconductor material composed of carbon and silicon elements, and is called wide-bandgap semiconductor material because the band gap is greater than 2.2eV. PAM-XIAMEN can provide N-type and semi-insulating SiC wafers. More specifications of SiC wafer please visit https://www.powerwaywafer.com/sic-wafer.
How SiC wafers [...]
2022-08-17meta-author
Carbon neutrality refers to through afforestation, energy saving and emission reduction, etc., to offset the carbon dioxide or greenhouse gas emissions generated by itself, to achieve positive and negative offset, to achieve relatively “zero emissions”. Only by reducing energy consumption can carbon emissions be [...]
2022-06-02meta-author
PAM XIAMEN offers high-quality Al2O3 (Sapphire).
R-Plane (1-102)
Square Al2O3(11-02) substrate
Al2O3- Sapphire Wafe, R Plane, 5x5x0.5mm, 1SP
Al2O3-Sapphire Wafe, R Plane, 5x5x0.5mm, 2SP
Al2O3- Sapphire Wafer, R Plane, 10x10x0.5mm, 1SP
Al2O3-Sapphire Wafer, R Plane, 10x10x0.5mm, 2SP
Al2O3- Sapphire Wafer, R Plane, 10x10x1.0mm, 1SP
Al2O3-Sapphire Wafe, R Plane, 0.5″x0.5″x0.5 [...]
2019-04-16meta-author
PAM-XIAMEN can provide InP laser structure with InAlGaAs quantum well for 1300nm lasers. InGaAsP / InP and AlGaInAs / InP quantum well material systems have become the most widely used gain media. Compare with InGaAsP / InP material, AlGalnAs / InP has larger conduction band offset than InGaAsP / InP material, so it can more effectively prevent the leakage [...]
2023-04-04meta-author