BaTiO3-2

PAM XIAMEN offers high-quality BaTiO3.

BaTiO3 Substrates (110)

BaTiO3 (110) 5x5x0.5 mm, 1SP, Substrate grade(with domains)
BaTiO3 (110) 5x5x1.0 mm, 2SP, Substrate grade(with domains)
BaTiO3 (110) 10 x 10 x0.5 mm, 1SP, Substrate grade (with domains)

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

2019-04-17

CZT Asymmetry(Hemispherical) Detector

PAM-H01 series are CZT crystal based hemispherical detectors which have a special structure. They can detect X-ray and middle to high energy γ-ray in a high energy resolution. CZT Asymmetry Detector 1. CZT Hemispherical Detector Specification Material CdZnTe Density 5.8g/cm3 Volume resistance >1010Ω.cm Dimensions 5.5×5.0mm2 10.0×10.0mm2 Thickness 2.75mm 5.0mm Electrode material Au Operation temperature -20℃-+40℃ Energy range 10KeV~3MeV Energy resolution(22℃) <3%@662MeV Peak-compton ratio >3 >5 Storage temperture 10℃~40℃ Storage humidity 20%-80% Remarks Customized available 2. CZT Crystal [...]

2019-04-24meta-author

Polished silicon slab

PAM XIAMEN offers Polished silicon slab. Size: 90X200mm Thickness: 9±1mm 2 polished face 90 x 200mm Flatness <1um TTV <5um For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]

2019-08-22meta-author

How Silicon Carbide Wafers Are Made?

Silicon carbide (SiC) is a compound semiconductor material composed of carbon and silicon elements, and is called wide-bandgap semiconductor material because the band gap is greater than 2.2eV. PAM-XIAMEN can provide N-type and semi-insulating SiC wafers. More specifications of SiC wafer please visit https://www.powerwaywafer.com/sic-wafer. How SiC wafers [...]

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Wide-Bandgap Semiconductors Help Achieve “Carbon Neutrality”

Carbon neutrality refers to through afforestation, energy saving and emission reduction, etc., to offset the carbon dioxide or greenhouse gas emissions generated by itself, to achieve positive and negative offset, to achieve relatively “zero emissions”. Only by reducing energy consumption can carbon emissions be [...]

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Al2O3 (Sapphire)-4

PAM XIAMEN offers high-quality Al2O3 (Sapphire). R-Plane (1-102) Square Al2O3(11-02) substrate Al2O3- Sapphire Wafe, R Plane, 5x5x0.5mm, 1SP Al2O3-Sapphire Wafe, R Plane, 5x5x0.5mm, 2SP Al2O3- Sapphire Wafer, R Plane, 10x10x0.5mm, 1SP Al2O3-Sapphire Wafer, R Plane, 10x10x0.5mm, 2SP Al2O3- Sapphire Wafer, R Plane, 10x10x1.0mm, 1SP Al2O3-Sapphire Wafe, R Plane, 0.5″x0.5″x0.5 [...]

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1300nm Laser Diode Wafer

PAM-XIAMEN can provide InP laser structure with InAlGaAs quantum well for 1300nm lasers. InGaAsP / InP and AlGaInAs / InP quantum well material systems have become the most widely used gain media. Compare with InGaAsP / InP material, AlGalnAs / InP has larger conduction band offset than InGaAsP / InP material, so it can more effectively prevent the leakage [...]

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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Nanofabrication Photoresist

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A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
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Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

sales@powerwaywafer.com tech@powerwaywafer.com

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

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PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

BaTiO3-2

BaTiO3-2

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