BaTiO3-4

BaTiO3-4

PAM XIAMEN offers high-quality BaTiO3.

BaTiO3 Substrates (001)

BaTiO3 (001) 5x5x1.0 mm, 1SP, Substrate grade with single domain
BaTiO3 (001) 5x5x1.0 mm, 1SP, Substrate grade(with domains)
BaTiO3 (001) 5x5x1.0 mm, 2SP, Substrate grade(with domains)
BaTiO3 (001) 10x10x0.5 mm, 1SP, Substrate grade (with domains)
BaTiO3 (001) 10x10x0.5 mm, 2SP, Substrate grade(with domains)
BaTiO3 (001) 10x10x1.0 mm, 1SP, Substrate grade(with domains)
BaTiO3 (001) 10x10x1.0 mm, 2SP, Substrate grade (with domains)

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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