PAM XIAMEN offers BGO, Bismuth germanate, Bi4Ge3O12 Scintillation Crystals.
SPECIFICATIONS:
Crystal structure: Cubic
Lattice Parameter: a=10.518 Å
Density: 7.13（g/cm3）
Hardness: 5（mohs）
Melt point: 1050℃
Index of refraction: 2.15
Radiation length: 1.1cm
Peak of fluorescence spectra : 480nm
Decay time: 300ns
Relative light output（%）: 10-14 Nal（Tl）
Energy resolution: 20% @511KV
Crystal orientation: <001>、<110>
Size（mm):Special size and orientation are available upon request
Polishing: Single or double
Packaging: Clean room
MAIN APPLICATIONS
Positron emission tomography (PET)
High-energy physics
Nuclear medicine
Geological prospecting
Gamma pulse spectroscopy
BGO SCINTILLATOR DESCRIPTION
Bismuth Germanate scintillation crystal (Bi4Ge3012 or BGO scintillator) is one of the most widely used scintillation materials of the oxide type. It has high atomic number and density values. BGO is mechanically strong enough, rugged, non- hygroscopicity, and has no cleavage .BGO has an extreme high density of 7.13 g /cm3 and has a high Z value which makes these crystals very suitable for the detection of natural radioactivity (U, Th, K).
CUSTOMIZED BGO SCINTILLATION CRYSTAL
We can do customized BGO scintillation crystals growth and make customized machining, including cutting, grinding and polishing. Please contact our materials scientists to discuss your detailed requirements.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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