Bi4Ge3O12 (BGO12)

PAM XIAMEN offers Bi4Ge3O12 (BGO12).

BGO is excellent scitillation crystal and has a wide range of applications in high energy physics , nuclear and space physics , and nuclear medicines.

Bi4Ge3O12 – BGO12 (001) 10x10x0.5 mm 1 side polished

Features:
Bi4Ge3O12  ( BGO12) is a good scintillation material and has found a wide range of applications in high energy physics, nuclear physics, space physics, nuclear medicine, geological prospecting and other industries.  
Wafer size: 10 x 10 x 0.5 mm thick
Orientation: (001) +/-0.5o 
Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A
1 sides polished
Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.

Typical Properties:

Structure Cubic
Lattice constant a=10.518 A
Density (g/cm3) 7.13
Melting point (oC) 1050
Parameter of crystal cell (A) 10.518
Refractive index 2.15
Radiation length (cm) 1.1
Peak of fluorescence spectra (nm) 480
Decay time (ns) 300
Relative light output (%) 10-14 Nal (Tl)
Energy resolution (511 Kev,%) 20

 

Bi4Ge3O12 – BGO12 (001) 10x10x0.5 mm 2 sides polished

Features:
Bi4Ge3O12  (BGO12) is a good scintillation material and has found a wide range of applications in high energy physics, nuclear physics, space physics, nuclear medicine, geological prospecting and other industries.  
Wafer size: 10 x 10 x 0.5 mm thick
Orientation: (001) +/-0.5o 
Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A
2 sides polished
Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.

Typical Properties:

Structure Cubic
Lattice constant a=10.518 A
Density (g/cm3) 7.13
Melting point (oC) 1050
Parameter of crystal cell (A) 10.518
Refractive index 2.15
Radiation length (cm) 1.1
Peak of fluorescence spectra (nm) 480
Decay time (ns) 300
Relative light output (%) 10-14 Nal (Tl)
Energy resolution (511 Kev,%) 20

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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