BN (h) – 2D crystal

BN (h) – 2D crystal

PAM XIAMEN offers BN (h) – 2D crystal.

Natural Boron Nitride Single Crystal, 0.6-1.0 mm

Hexagonal boron nitride (h-BN) single crystals are ideal as a substrate for 2D materials. h-BN crystals are highly crystalline display strong Raman peak at 1566 cm-1 with FWHM less than 5cm-1. It displays 5.2 eV band gap and is considered wide-band gap semiconductor / insulator. Chemically inert, atomically flat.

Crystal:                 Boron Nitride (BN) single crystal
Crystal Structure: Hexagonal
Growth Method:      CVD
Purity:                   > 99.5%
Resistivity:             Insulator
Size:                     0.6~1 mm
Packing:                 ~10 pcs/Box  ( Packed in vacuum sealed box )

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system.Test report is provided for each shipment, and each wafer are warranty.

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