PAM XIAMEN offers Boron Nitride Film on Silicon Wafer.
Boron Nitride Film on Silicon Wafer , 24 nm / 4″ — BN-Si-100-24nm
Boron nitride is a chemical compound with chemical formula BN, consisting of equal numbers of boron and nitrogen atoms. BN is isoelectronic to a similarly structured carbon lattice and thus exists in various crystalline forms. The Cubic (sphalerite structure) bariety analogous to diamond is called c-BN. Its hardness is inferior only to diamond, but its thermal and chemical stability is superior. Low-pressure deposition of thin films of boron nitride are grown on Si (100) wafers for this product.
BN Film coated by sputtering method
BN Thickness: 24 nm +/- 10%
Silicon Wafer Specifications:
Conductive type: Si n- type
Resistivity: 0.1-1.0 ohm-cm
Size: 4″ diameter +/- 0.5 mm x 0.525 +/- 0.025 mmth
Orientation: (100) +/- 0.5o
Polish: One sides polished
Surface roughness: Prime
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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