Livermore, CA and Tokyo (Marketwire) – Bridgelux Inc., a leading developer and promoter of LED lighting technologies and solutions, and Toshiba Corporation, a world-leading semiconductor manufacturer, today announced that Bridgelux and Toshiba have achieved the industry’s top class 8″ GaN on SiliconLED chip emitting 614mW, < 3.1V @ 350mA with 1.1mm square chip, just months after they have engaged in a joint collaborative agreement this year. Bridgelux and Toshiba will further accelerate their development efforts for LED chips, which have seen increasing demand for LCD panels and lightening systems world wide.
Toshiba has also made an equity investment in Bridgelux with the intent to jointly pursue an innovative technology in the Solid State Lighting (SSL) space. This investment will further advance both companies’ efforts in the SSL industry, with the view to boost Bridgelux’s GaN-on-Silicon LED chip technology development efforts based on Toshiba’s advanced silicon process and manufacturing technology development efforts.
“Toshiba and Bridgelux have already been engaged in the development of the technology, and the equity investment brings both companies one step closer to a more strategic relationship and achieving our shared goal of driving down the cost of Solid State solutions for the general lighting market,” said Bill Watkins, Bridgelux Chief Executive Officer.
“We are pleased to achieve the best-reported 8″ GaN-on-Silicon LED performance through our joint development activities with Bridgelux. We will continue to pursue more advanced development targeting commercialization of the technology,” said Makoto Hideshima, Executive Vice President of Semiconductor and Storage Products Company, Corporate Vice President of Toshiba.
GaN-on-Silicon: Gallium Nitride layers grow on silicon substrate.