PAM XIAMEN offers high-quality Al2O3 (Sapphire).
Al2O3(10-14)
Al2O3- Sapphire Wafer, (10-14), 10x10x0.5mm, 1 SP
Fearures:
Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties.
Wafer size: 10 [...]
2019-04-16meta-author
Product Specifications
PAM XIAMEN offers Freestanding GaN Substrate
2″GaN Free-standing Substrate
Item
PAM-FS-GaN50-N
PAM-FS-GaN50-SI
Conduction Type
N-type
Semi-insulating
Size
2″(50.8)+/-1mm
Thickness
260+/-20um
Orientation
C-axis(0001)+/-0.5°
Primary Flat Location
(1-100)+/-0.5°
Primary Flat Length
16+/-1mm
Secondary Flat Location
(11-20)+/-3°
Secondary Flat Length
8+/-1mm
Resistivity(300K)
<0.5Ω·cm
>10^6Ω·cm
Dislocation Density
<5×10^6cm-2
Marco Defect Density
A grade<=2cm-2 B grade>2cm-2
TTV
<=15um
BOW
<=20um
Surface Finish
Front Surface:Ra<0.2nm.Epi-ready polished
Back Surface:1.Fine ground
2.Rough grinded
≥ 90 %
Usable Area
1.5″GaN Free-standing Substrate
Item
PAM-FS-GaN50-N
PAM-FS-GaN50-SI
Conduction Type
N-type
Semi-insulating
Size
1.5″(38.1)+/-0.5mm
Thickness
260+/-20um
Orientation
C-axis(0001)+/-0.5°
Primary Flat Location
(1-100)+/-0.5°
Primary Flat Length
12+/-1mm
Secondary Flat Location
(11-20)+/-3°
Secondary Flat Length
6+/-1mm
Resistivity(300K)
<0.5Ω·cm
>10^6Ω·cm
Dislocation [...]
2019-03-15meta-author
Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs
We have investigated the effects of nonradiative recombination centers (NRCs) on the device performance of InGaN/GaN multi-quantum-well (MQW) light-emitting diodes (LEDs) inserting low-temperature n-GaN (LT-GaN) underlying [...]
Gallium nitride semiconductors
GaN is a compound semiconductor on steroids! if you could make a 10 Watt part on GaAs at a particular frequency, you can probably make a 100 watt part on GaN right now.
Gallium nitride is the future of microwave power amps, GaAs has exceeded its [...]
PAM XIAMEN offers 3″ Silicon Wafer-21
Si wafer
Orientation: (111) ± 0.5°
Type: p-type
Dopant: B
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 2° to <11-2>
Resistivity: < 0.002 Ohm*cm
Single side polished
C Boron > E20 atom/cm3
Oi < 1E18 atom/cm3
[...]
2020-03-18meta-author
Diamond wafers from PAM-XIAMEN are wafer-scale products that are used to tap the huge potential of diamond materials, such as tribological testing, unique nano-scale processing applications and MEMS development. In the current diamond wafer market, there are three grade diamond wafer, Microelectronics Grade diamond wafer, Thermal [...]
2018-07-10meta-author