A study of Semi-insulating GaN Grown on AlN buffer/sapphire Substrate by Metalorganic Chemical Vapor Deposition
We report the remarkably improved crystal quality of semi-insulating GaN grown by metalorganic chemical vapor deposition on an
AlN buffer layer, which is deposited on sapphire substrate. The electrical and structural [...]
2012-09-04meta-author
PAM XIAMEN offers GaN on SiC for RF.
1.1 GaN HEMT Structure on Sapphire for RF Application
Wafer size
2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure
Refer 1.2
Carrier density
6E12~2E13 cm2
Hall mobility
/
XRD(102)FWHM
/
XRD(002)FWHM
/
Sheet Resistivity
200~450 ohm/sq
AFM RMS (nm)of 5x5um2
<0.25nm
Bow(um)
<=35um
Edge exclusion
<2mm
SiN passivation layer
/
GaN cap layer
/
Al composition
20-30%
In composition
17% for InAlN
AlGaN
/
AlN interlayer
/
GaN [...]
2019-05-17meta-author
PAM XIAMEN offers YSZ crystal.
YSZ crystal is grown by “cold crucible” method. It is very difficult to get a larger size YSZ crystal. PAM XIAMEN supplies YSZ crystal wafer up to 2″ diameter.
YSZ substrates (111)
YSZ (111) 5x5x0.5mm, 1SP”
YSZ (111) 10x10x0.5mm, [...]
2019-05-21meta-author
PAM XIAMEN offers PMN-PT Crystals.
10 x 10 x 0.5 mm PMN-PT Piezoelectric Crystal (111) Pb(Mg1/3Nb2/3)O3-PbTiO3 SSP
10 x 10 x 0.5 mm Pyroelectric Crystal PMN-PT (111) Pb(Mg1/3Nb2/3)O3-PbTiO3 SSP
5 x 10 x 0.5 mm PMNT Electro-Optic Crystal (001) Pack SSP
5 x 10 x 0.5 mm PMNT [...]
2019-03-14meta-author
Silicon Epi Wafers Sale
PAM XIAMEN offers Silicon Epi Wafers.
6″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3197
6″Øx675μm
n- Si:P[100]
0.001-0.002
P/EOx
0.016
n- Si:P
0.32-0.46
n/n+
4″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3198
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
360 – 440
n/n+
PAM3199
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
6.5
p- Si:B
3.6±10%
P/P/P+
22±1.5
p- Si:B
300±50
PAM3200
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
8.1±1
p- Si:B
4.5±10%
P/P/P+
6.85±0.75
p- Si:B
0.75±0.15
PAM3201
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
10.5
p- Si:B
570±10%
p/p+
PAM3202
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.15 ±10%
P/P+
PAM3203
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.25±10%
P/P+
PAM3204
4″Øx525μm
p- Si:B[111]
0.001-0.005
P/E
20
p- Si:B
175±10%
P/P+
PAM3205
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
21
p- Si:B
150 [...]
2019-02-15meta-author
PAM XIAMEN offers 4″ CZ Prime Silicon Wafer.
4″ epi CZ P-type (100)±0.5°
Thickness 525±15μm
Resistivity 0.015±0.005Ωcm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a [...]
2019-06-28meta-author