High-quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa flux dependent structural, morphological, and electrical characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM) and Hall effect measurement. The results indicate that it is feasible to deposit GaN films on freestanding thick diamond films under the proper deposition procedures. The high-quality GaN films with small surface roughness of 4.9 nm and high c-orientation are successfully achieved at the optimized TMGa flux of 0.5 sccm. The GaN/diamond structure has great potential for the development of SAW devices with high frequencies and low insertion.
Source: Springer Link
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