Carrier Concentration and Thickness Measurements of n-Type GaAs Epitaxial Layer by Cell Voltage in Anodization

The carrier concentration and thickness of n-type GaAs epitaxial layers were obtained by cell voltage measurements in anodization, and the results are compared with those obtained by differential C-V measurements. The carrier concentrations in the epi-layer are within the order of those obtained by C-V measurements and the thicknesses of the epi-layer agree with those obtained by C-V measurements. The technique described here enables the carrier concentration and thickness of an epi-layer such as n on an n+ substrate to be determined simply and inexpensively.



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