1.2Gallium Nitride(GaN)-Definition

1.2Gallium Nitride(GaN)-Definition

1.2Gallium Nitride(GaN)-Definition Despite the fact that GaN has been studied far more extensively than the other group III nitrides, further investigations are still needed to approach the level of understanding of technologically important materials such as Si and GaAs. GaN growth often suffers from large background n-type carrier concentrations because of native defects and, [...]

1.2.1 Chemical Properties of GaN

1.2.1 Chemical Properties of GaN Since Johnson et al. [139] first synthesized GaN in 1932, a large body of information has repeatedly indicated that GaN is an exceedingly stable compound exhibiting significant hardness. It is this chemical stability at elevated temperatures combined with its hardness that has made GaN an attractive material for [...]

1.2.2 Mechanical Properties of GaN

1.2.2 Mechanical Properties of GaN GaNhas a molecular weight of 83.7267 g mol1 in the hexagonalwurtzite structure.The lattice constant of early samples of GaN showed a dependence on growth conditions, impurity concentration, and film stoichiometry [151]. These observations were attributed to a high concentration of interstitial and bulk extended defects. A case in point [...]

1.2.3 Thermal Properties of GaN

1.2.3Thermal Properties of GaN The lattice parameter of semiconductors depends on temperature and is quantified by thermal expansion coefficient (TEC), which is defined as Da/a or aa and Dc/c or ac, for in-plane and out-of-plane configurations, respectively. It depends on stoichiometry, extended defects, and free-carrier concentration. As in the case of the lattice parameter, [...]