News

WS2 Crystal

PAM XIAMEN offers WS2 Crystal. WS2 (Tungsten Disulfide) is the first material which was found to form inorganic nanotubes, in 1992. This ability is related to the layered structure of WS2. WS2 nanotubes have been investigated as reinforcing agents to improve the mechanical properties of polymeric nanocomposites. Also, this [...]

W – Tungsten Polycrystalline Metal Substrates

PAM XIAMEN offers W – Tungsten Polycrystalline Metal Substrates. General Properties  for Tungsten Symbol                   W Atomic Number     74 Atomic Weight:      183.84 Crystal structure:   BCC Lattice constant at room temperature:   0.316 nm Density:                19.25 g/cm3 Melting Point:        3422 °C Boiling Point:         5555 °C Tungsten (W) Polycrystalline Substrate: 1″x1″x0.5 mm, two sides polished [...]

Te-Dy-Fe (Directionally solidified GMM)

PAM XIAMEN offers Te-Dy-Fe (Directionally solidified GMM). Giant magnetostrictive material is an alloy made of terbium, dysprosium and iron by directional solidification. It can change electrical energy into mechanical action or vice versa because of its merit as being sensing and actuating material. Demanding only low voltage, the strain [...]

Thermal Oxide Wafers, 2 – 4″ Research Grade-4

PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and higher dielectric strength. In most [...]

Thermal Oxide Wafers, 2 – 4″ Research Grade-3

PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and higher dielectric strength. In most [...]

Thermal Oxide Wafers, 2 – 4″ Research Grade-2

PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and higher dielectric strength. In most [...]

Thermal Oxide Wafers, 2 – 4″ Research Grade-1

PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and higher dielectric strength. In most [...]

DyScO3/GdScO3//TbScO3 crystal

PAM XIAMEN offers DyScO3/GdScO3//TbScO3 crystal. Crystal  Structure /Lattice Constant(A) MP oC Density, g/cm3 Growth Tech  DyScO3  Orthorombic   a=5.44  b=5.71  c=7.89  2127  6.9  CZ  GdScO3  Orthorombic  a=5.45  b=5.75  c=7.93  2127  6.6  CZ TbScO3 Orthorhombic, a = 5.4543, b = 5.7233  c = 7.9147 2127  6.6 CZ   DyScO3 DyScO3 (110) 5x5x0.5mm 1sp” DyScO3 (110) 5x5x0.5mm 2sp DyScO3 (110) 10x10x0.5mm 1sp DyScO3 (110) 10x10x0.5mm 2sp DyScO3 (001) 10x10x0.5mm 1sp DyScO3 (001) 10x10x0.5mm 2sp DyScO3 (001) 5x5x0.5mm 1sp   GdScO3 [...]

Single crystal TeO2

PAM XIAMEN offers Single crystal TeO2. TeO2 (110) 10x10x0.5mm, 1sp TeO2 (001) 5x5x0.3mm, 2sp TeO2 (110) 10x10x0.5mm, 2sp For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor [...]

TGG (Terbium Gallium Garnet)

PAM XIAMEN offers TGG (Terbium Gallium Garnet). TGG singlecrystal( Terbium Gallium Garne ) is an excellent magneto-optical crystal used in various Faraday device s(Rotator and Isolator) in the range of 400nm-1100nm, excluding 475 – 500nm. TGG Single Crystal Substrate: (111) 10 x 10 x. 0.5mm , 1 SP TGG [...]