Growth Mechanism of GaAs Microdisk Structures by Area-Selective Epitaxy Using Migration-Enhanced Epitaxy We have carried out area-selective epitaxy of GaAs microdisk structures on a SiO2-masked GaAs substrate by migration-enhanced epitaxy. We have successfully grown “damage-free” disks at 590 °C. It is found that, for the structures grown on (111)B substrates, [...]
The SiC and GaN power semiconductor market will exceed $10 billion by 2027! Key conclusions: Emerging-market silicon carbide(SiC) and gallium nitride(GaN) power semiconductors are expected to reach nearly $1 billion by 2020, driven by demand for hybrid and electric vehicles, power and photovoltaic (PV) inverters. The use of SiC and GaN power [...]
A Glance of GaAs Wafer Market According to Mamms Consulting, as one of the most mature compound semiconductors, GaAs is everywhere, and it has become the cornerstone of power amplifiers in every smart phone! In 2018, the GaAs RF business is expected to account for more than 50% of the [...]
Wide Bandgap Technology –Next Generation Power Devices The tightening of industry standards and changes in government regulations are key drivers of higher energy efficiency. For example, data centers are growing exponentially to meet demand. They use about 3% of the world’s total electricity supply (400 kWh) and 2% of total [...]
Near-band-edge luminescence in heavily doped gallium arsenide The near-band-edge photoluminescence at 80K of heavily tellurium-doped degenerate liquid-phase-epitaxial gallium arsenide layers (n=2*1018 cm-3) is investigated. The layers are compensated with shallow germanium acceptors (the values of the degree of compensation are K=0.05-0.7) during the epitaxial growth process. It is established that even [...]
Blue GaN LD Wafer We can offer 2” InGaN/GaN quantum well blue LD wafer as follow spec: Item Descriptions Materials Substrate blue laser 440-460nm InGaN 2 inch Sapphire substrate GaN Blue LD EPI Wafer Spec Spec EPI Wafer Size Growth MOCVD Diameter 50.8 ± 0.2 mm Thickness 430 ± 30 um EPI thickness um EPI Wafer Structure Contact layer p type GaN Superlattice Cladding Layer p type GaN Electron Blocking Layer p type AlGaN Waveguide Layer undoped InGaN QW and [...]
Single crystal 6H-SiC MEMS fabrication based on smart-cut technique A new single crystal silicon carbide (SiC) MEMS fabrication process is developed using a proton-implantation smart-cut technique. A 6H-SiC layer with 1.3 µm thickness has been achieved over an oxidized silicon substrate using the proposed technique. TEM analyses of the silicon [...]
LED Wafer on Silicon We offer high performance blue light-emitting diode prototypes that grow 2” gallium (GaN) layers based on LED structure on silicon substrate as well as sapphire substrates. Silicon is a low-cost compared with sapphire substrates, and large diameter silicon wafer processing is already popular in the semiconductor market, with the possibility [...]
UV LED Wafer We started to offer UV LED wafers that were grown by our MOCVD range from 365nm to 405nm, the detail structure is as below: P-AlGaN AlGaN EBL AlGaN/InGaN MOWs N-SLS N-AlGaN Undoped AlGaN Sapphire substrate Ultraviolet electromagnetic radiation, commonly known as UV, is used in many industries and applications. The emerging UV LED will be [...]
AlGaN template structure report A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing equipment,micropipe density [...]
