The development of SiC and GaN power semiconductor market The current state of SiC technology and market, and the development trend in the next few years. The SiC device market is promising. Sales of Schottky barrier diodes have matured and MOSFET shipments are expected to increase significantly over the next three [...]
This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding of Ge wafers was not [...]
PAM-XIAMEN offers crucibles and coating products of PBN material including PBN Crucibles,PBN Plates,PBN Coating,PBN Heaters. These PBN (Pyrolytic Boron Nitride) products are widely used in such fields as optoelectronic,microelectronics,solar energy and powder sintering. [...]
VCSEL Market Overview At present, the world’s major designers include Finsar, Lumentum, Princeton Optronics, Heptagon, IIVI and other companies, which are at the forefront of R&D roles on the mobile VCSEL. III-V EPI epitaxial wafers are supplied by companies such as IQE, PAM-XIAMEN, VPEC and Landmark Optoelectronics, and then wafer fabrication [...]
Growth Mechanism of GaAs Microdisk Structures by Area-Selective Epitaxy Using Migration-Enhanced Epitaxy We have carried out area-selective epitaxy of GaAs microdisk structures on a SiO2-masked GaAs substrate by migration-enhanced epitaxy. We have successfully grown “damage-free” disks at 590 °C. It is found that, for the structures grown on (111)B substrates, [...]
The SiC and GaN power semiconductor market will exceed $10 billion by 2027! Key conclusions: Emerging-market silicon carbide(SiC) and gallium nitride(GaN) power semiconductors are expected to reach nearly $1 billion by 2020, driven by demand for hybrid and electric vehicles, power and photovoltaic (PV) inverters. The use of SiC and GaN power [...]
A Glance of GaAs Wafer Market According to Mamms Consulting, as one of the most mature compound semiconductors, GaAs is everywhere, and it has become the cornerstone of power amplifiers in every smart phone! In 2018, the GaAs RF business is expected to account for more than 50% of the [...]
Wide Bandgap Technology –Next Generation Power Devices The tightening of industry standards and changes in government regulations are key drivers of higher energy efficiency. For example, data centers are growing exponentially to meet demand. They use about 3% of the world’s total electricity supply (400 kWh) and 2% of total [...]
Near-band-edge luminescence in heavily doped gallium arsenide The near-band-edge photoluminescence at 80K of heavily tellurium-doped degenerate liquid-phase-epitaxial gallium arsenide layers (n=2*1018 cm-3) is investigated. The layers are compensated with shallow germanium acceptors (the values of the degree of compensation are K=0.05-0.7) during the epitaxial growth process. It is established that even [...]
Blue GaN LD Wafer We can offer 2” InGaN/GaN quantum well blue LD wafer as follow spec: Item Descriptions Materials Substrate blue laser 440-460nm InGaN 2 inch Sapphire substrate GaN Blue LD EPI Wafer Spec Spec EPI Wafer Size Growth MOCVD Diameter 50.8 ± 0.2 mm Thickness 430 ± 30 um EPI thickness um EPI Wafer Structure Contact layer p type GaN Superlattice Cladding Layer p type GaN Electron Blocking Layer p type AlGaN Waveguide Layer undoped InGaN QW and [...]
