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Homoepitaxial growth of GaN crystals by Na-flux dipping method

The realization of low-dislocation-density bulk GaN crystals is necessary for use in the fabrication of future high-power devices with low power consumption. In this study, we attempted the regrowth of low-dislocation-density (104–105 cm−2) GaN substrates to fabricate thick and low-dislocation-density GaN crystals using the dipping technique with the Na-flux method. [...]

Growth of SiC nanowires/nanorods using a Fe–Si solution method

A new solution technique to grow SiC nanowires/nanorods was developed by simply heating Fe–Si melt on a graphite plate in argon atmosphere to 1600 °C for 3 and 6 h. SiC nanowires/nanorods with diameters of 100 nm and lengths of several tens of micrometres were grown on the surface of [...]

3″ Silicon Wafer-15

PAM XIAMEN offers3″ Silicon Wafer-15 3″ Si wafer(32825), R≤200Ωcm 1. Diameter: 76.2 ± 0.1mm 2. The type of alloying: P/type boron 3. Orientation (111) ±0.5º 4. Disorientation 4°±0.5º to <110> direction 5. Resistivity: ≤150Ωcm 6. Primary surface: semi std 7. Secondary surface: none 8. Thickness: 380±25μm 9. Overall thickness variation on the plate is not more than 10 microns 10. [...]

Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer

The dependence of the morphology and crystallinity of an amorphous Ge (a-Ge) interlayer between two Si wafers on the annealing temperature is identified to understand the bubble evolution mechanism. The effect of a-Ge layer thickness on the bubble density and size at different annealing temperatures is also clearly clarified. [...]

3″ Silicon Wafer-14

PAM XIAMEN offers 3″ Silicon Wafer-14 3″ Si wafer(32849), R≥200Ωcm 1. Diameter: 76.2 ± 0.1mm 2. The type of alloying: N-type/ phosphorus .3. Orientation (111) ±0.5º 4. Disorientation 4°±0.5º to <110> axis direction 5. Resistivity: ≥200Ωcm 6. Primary surface: semi std 7. Secondary surface: none 8. Thickness: 380±25μm 9. Overall thickness variation on the plate is not more than 10 [...]

High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy

There is a method of controlling nucleation and lateral growth using the three-dimensional (3D) and two-dimensional (2D) growth modes to reduce the dislocation density. We performed 3D–2D-AlN growth on 6H-SiC substrates to obtain high-quality and crack-free AlN layers by low-pressure hydride vapor phase epitaxy (LP-HVPE). First, we performed 3D-AlN [...]

Stress in (Al, Ga)N heterostructures grown on 6H-SiC and Si substrates byplasma-assisted molecular beam epitaxy

The paper describes experimental results on low temperature plasma-assisted molecular beam epitaxy of GaN/AlN heterostructures on both 6H-SiC and Si(111) substrates. We demonstrate that application of migration enhanced epitaxy and metal-modulated epitaxy for growth of AlN nucleation and buffer layers lowers the screw and edge(total)threading dislocation (TD) densities down [...]

The role of carbon and SiO2 in solid-state sintering of SiC

We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands    of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University,      Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance    for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of    Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title: The role of carbon and SiO2 in solid-state sintering of SiC Published by: Eran Gross;Dana Benes Dahan;Wayne D. Kaplan. Department of Materials Science and Engineering, Technion—Israel [...]