News

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and [...]

2018-07-12 Read more...

Diamond wafers

Diamond wafers Thermal Grade Diamand Wafers and Slices Diamond exhibits the highest thermal conductivity among all materials. Its thermal conductivity is up to 2000 W/mK which is higher a lot than that of copper. Therefore diamond wafers and slices become more and more popular in thermal management as heatspreaders,heatsinks, lithographically patterned [...]

2018-07-10 Read more...

5-5-3 SiC Contacts and Interconnect

5-5-3 SiC Contacts and Interconnect All useful semiconductor electronics require conductive signal paths in and out of each device as well as conductive interconnects to carry signals between devices on the same chip and to external circuit elements that reside off-chip. While SiC itself is theoretically capable of fantastic electrical operation under extreme [...]

2018-06-28 Read more...

Progress in bulk GaN growth

Progress in bulk GaN growth* Three main technologies for bulk GaN growth, i.e., hydride vapor phase epitaxy (HVPE), Na-flux method, and ammonothermal method, are discussed. We report our recent work in HVPE growth of GaN substrate, including dislocation reduction, strain control, separation, and doping of GaN film. The growth mechanisms [...]

2018-05-29 Read more...

New graphene fabrication method uses silicon carbide template

New graphene fabrication method uses silicon carbide template Graphene transistors. Georgia Tech researchers have fabricated an array of 10,000 top-gated graphene transistors, believed to be the largest graphene device density reported so far. (PhysOrg.com) — Researchers at the Georgia Institute of Technology have developed a new “templated growth” technique for fabricating [...]

2018-05-17 Read more...

PAM-XIAMEN Offers GaAs LED wafer

PAM-XIAMEN Offers GaAs LED wafer Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAs epi wafer and other related products and services announced the new availability of size 2”&4”  is on mass production in 2010. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We [...]

2018-05-14 Read more...

Strain-free epitaxy of germanium film on mica

Flexible semiconductor Ge thin film grown on mica by van der Waals epitaxy. The film experiences no degradation in its electrical properties even after repeated bending. Credit: Aaron Littlejohn, Rensselaer Polytechnic Institute Germanium, an elemental semiconductor, was the material of choice in the early history of electronic devices, before it [...]

2018-05-08 Read more...

PAM-XIAMEN Offers High Purity Semi-Insulating SiC substrate

PAM-XIAMEN Offers High Purity Semi-Insulating SiC substrate Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of High Purity Semi-Insulating SiC substrate and other related products and services announced the new availability of size 2”&3”&4”  is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. [...]

2018-05-04 Read more...

InGaAs nano-pillar array formation on partially masked InP(111)B by selective area metal–organic vapour phase epitaxial growth for two-dimensional photonic crystal application

InGaAs nano-pillar array formation on partially masked InP(111)B by selective area metal–organic vapour phase epitaxial growth for two-dimensional photonic crystal application We report on the selective area metal–organic vapour phase epitaxial growth of an InGaAs nano-pillar array on a partially masked InP(111)B substrate. This technique is very promising as a [...]

2018-04-26 Read more...

Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling

Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling On the base of the physical analytical models based on Poisson’s equation, drift–diffusion and continuity equations the forward current–voltage characteristics of 6H-SiC and 4H-SiC type Schottky diode with Ni and Ti Schottky contact have been simulated. It is [...]

2018-04-19 Read more...