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4″ FZ Prime Silicon Wafer-6

PAM XIAMEN offers4″ FZ Prime Silicon Wafer-6 Substrate Monocrystalline Silicon Diameter 100 ±0.3mm Growth method Fz Lifetime>1000µsec Thickness 600± 25µm Type/DopantN/Phosphorus Orientation[110]±0.5° Resistivity>5,000 Ωcm TTV<10µm Bow/Warp<40µm Primary Flat Location@[111]±<0.25° Primary Flat Length 32.5± 2.5mm Secondary Flat Location@[111]70.5° CW from primary flat Front side finishMirror Polish Edge rounded per SEMI standard *Exception: No edge round on primary flat* Back side finish Mirror Polish Packaging Empak cassette Option Laser Serialized: [...]

2019-09-20 Read more...

6″ CZ Prime Wafer 1

PAM XIAMEN offers6″ CZ Prime Wafer 1 6 inch Prime CZ-Si wafer 6 inch (+/- 0.5 mm), thickness = 200 ± 25 µm, orientation (100)(+/-0.5°), 2-side polished, p or n type (no matter) , ? Ohm cm (no matter), Particle: 0.5μm, <qty300 ttv ≤ 10um，warp ≤30um One side sputtering Cr/Au Layer with the thickness 10nm/50nm For more information, [...]

2019-09-20 Read more...

4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3

PAM XIAMEN offers4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3 4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm, orientation (100)(+/-0.5°), 2-side polished, p or n type (no matter) , ? Ohm cm (no matter), Particle: 0.33µm, <qty30 ttv ≤ 10um，warp ≤30um One side sputtering Cr/Au Layer with [...]

2019-09-20 Read more...

8″ Silicon Wafer-3

PAM XIAMEN offers8″ Silicon Wafer-3 Silicon Wafer P-Type Diameter 200.00±0.5 mm Thickness 725±50μm Dislocation density < 10-2 cm-2 Dopant – Boron Resistivity- 10-40 Ω.cm Notch SEMI STD Chamfer width 250-350μm Orientation – (100)±0.5 single sided polishing For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com With more than 25+years experiences in compound semiconductor material field and export business, our team can [...]

2019-09-20 Read more...

6″ FZ Silicon Wafer-5

PAM XIAMEN offers6″ FZ Silicon Wafer-5 Silicon wafers, per SEMI Prime, P/E 6″Ø×875±25µm, FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm, Warp<60μm, One-side-polished, Particles: ≤10@≥0.3μm, MCL (Na, Al, K, Fe, Ni, Cu, Zn)<5E10/cm²,back-side etched, Tarnish, orange peel, contamination, haze, micro scratch, chips, edge chips, crack, crow feet, pin hole, pits, dent, waviness, smudge&scar on the back side: all none, SEMI [...]

2019-09-19 Read more...

4″CZ Prime Silicon Wafer-3

PAM XIAMEN offers 4″CZ Prime Silicon Wafer-3 Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm, One-side-polished, back-side Alkaline etched, SEMI Flat (one), Sealed in Empak or equivalent cassette, MCC Lifetime>1,000μs. For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading [...]

2019-09-19 Read more...

Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films

The new method of solid-phase epitaxy based on the substitution of atoms and on the creation of dilatation dipoles solves one of the major problems in heteroepitaxy. It provides the synthesis of low-defective unstrained epitaxial films with a large difference between the lattice parameters of the film and the [...]

2019-09-18 Read more...

8″ Silicon Wafer-2

PAM XIAMEN offers 8″ Silicon Wafer 8″ Silicon Wafer P-Type Diameter 200.00±0.5 mm Thickness 725±50μm Dislocation density < 10-2 cm-2 Dopant – Boron Resistivity- 10-40 Ω.cm Chamfer width 700-1000 μm Orientation – (100)±0.5 single sided polishing For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor [...]

2019-09-03 Read more...

6″ FZ Silicon Wafer-4

PAM XIAMEN offers 6″ FZ Silicon Wafer Silicon wafers, per SEMI Prime, P/E 6″Ø×875±25µm, FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm, Warp<60μm, One-side-polished, Particles: ≤10@≥0.3μm, MCL (Na, Al, K, Fe, Ni, Cu, Zn)<5E10/cm²,back-side etched, Tarnish, orange peel, contamination, haze, micro scratch, chips, edge chips, crack, crow feet, pin hole, pits, dent, waviness, smudge&scar on the back side: all none, SEMI [...]

2019-09-03 Read more...

Germanium Can Take Transistors Where Silicon Can’t

Germanium was an early transistor material. Now its charge-carrying abilities and advanced fabrication technology make it an attractive material for future chips. As a proof of concept, our team used germanium-on-insulator wafers to construct inverters containing first planar transistors and then FinFETs  Germanium was first isolated and identified by the [...]

2019-08-28 Read more...