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Semiconductor Science and Technology The influence of growth conditions on the quality of CdZnTe single crystals

Experimental conditions were investigated for growth of inclusion-free near-stoichiometric CdZnTe single crystals with a minimized concentration of native point defects. The positions of the stoichiometric line PS = 8×105exp (-1.76×104/T) (atm) and the room-temperature and high-temperature p-n lines were evaluated from high-temperature in situ galvanomagnetic measurements. The Cd pressure [...]

2019-07-16 Read more...

6″ FZ Prime Silicon Wafer

PAM XIAMEN offers 6″FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/E 6″ {150.0±0.5mm}Ø×1,000±25µm, FZ p-type Si:B[111]±0.5°, Ro > 5,000 Ohmcm, One-side-polished, Particles: <10@≥0.3µm, back-side etched, One SEMI Flat (57.5mm), Edges: rounded, Sealed in Empak or equivalent cassette, BOW<30µm, MCCLifetime>1000µs. For more information, please visit our website: https://www.powerwaywafer.com, [...]

2019-07-05 Read more...

4″ CZ Epitaxial Prime Silicon Wafer-3

PAM XIAMEN offers 4″CZ Epitaxial Prime Silicon Wafer. 4″ Si epi wafer Growth Method: CZ 100 +/- 0.5 mm diameter silicon Orientation <111> 4deg off P Type Boron doped 0.002 – 0.003 ohm cm Front side polished – Epi ready thickness 525 +/-25 um Back side etched Above substrates [...]

2019-07-05 Read more...

4″CZ Epitaxial Prime Silicon Wafer-2

PAM XIAMEN offers 4″CZ Epitaxial Prime Silicon Wafer. 4″ Si substrate wafer Growth Method: CZ 100 +/- 0.5 mm diameter silicon Orientation <111> 4deg off P Type Boron doped 0.002 – 0.003 ohm cm Front side polished – Epi ready thickness 525 +/-25 um Back side etched For more [...]

2019-07-05 Read more...

4″ FZ Silicon Ignot-4

PAM XIAMEN offers 4″FZ Silicon Ignot. Silicon ingot, per SEMI, 100.7±0.3mmØ, FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm, NO Flats. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, MCC Lifetime>1,000µs For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a [...]

2019-07-05 Read more...

4″ FZ Prime Silicon Wafer-5

PAM XIAMEN offers 4″FZ Prime Silicon Wafer. 4″ Si wafer, R>20,000Ωcm Silicon, Si wafers orientation (100) dimensions 100 mm x 525µm (+/-25µm) thick. FZ >20 000 ohm.cm Ra<0.5 nm One side polished Ra<0.5nm (µelectronic grade) For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and [...]

2019-07-05 Read more...

4″ FZ Prime Silicon Wafer-4

PAM XIAMEN offers 4″FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm, FZ Intrinsic undoped Si:-[111]±0.5°, Ro > 10,000 Ohmcm, TTV<5μm, Bow<20μm, Warp<30μm, One-side-Epi-Ready-polished, back-side etched, SEMI Flats, Sealed in Empak or equivalent cassette, MCC Lifetime>1,000μs. For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]

2019-07-05 Read more...

4″Silicon Ignot-2

PAM XIAMEN offers 4″Silicon Ignot. Silicon ingot, per SEMI, G 4″Ø (Diameter 100.5±0.3mm), FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm, Ground Ingot, NO Flats. Lifetime>1,000us, Ox/Carbon <1E16/cc. For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced [...]

2019-07-05 Read more...

4″CZ Prime Silicon Wafer-2

PAM XIAMEN offers 4″CZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm, p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm, TTV<5µm, Bow<30µm, Warp<30µm, Both-sides-polished, SEMI Flat (one), Sealed in Empak or equivalent cassette. For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen [...]

2019-07-05 Read more...