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Undoped Gallium Arsenide(GaAs) Wafer

Undoped Gallium Arsenide(GaAs) Wafer PAM-XIAMEN offer undoped GaAs wafer as follows: No1.Undoped GaAs wafers,2”size Diameter:50.8 mm +/- 0.3 mm Orientation: (100)+/-0.1deg. Semi Insulating, Undoped US Semi Standard Flats Major Flat Length: 17+/-1mm Minor Flat Length: 7+/-1mm Thickness: 350+/-25um Resistivity: >1E7 Ohm*cm Mobility: >=4000 cm2/V*s CC: Not Specified EPD: <=5000 cm-2 1 Side Polished (Ra < 5Å), EPI Ready, Back Side Etched No Laser [...]

6″CZ Prime Silicon Wafer-1

PAM XIAMEN offers 6″CZ Prime Silicon Wafer-1 Item8, 25pcs Silicon wafer: i. Diameter: 150 mm ± 0.5 mm, ii. Thickness: 675μm ±25μm iii. Doping: P type iv. Orientation: (111) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: CZ Grade: Prime Resistivity: 1 Ohm-cm to 10 Ohm-cm Surface: single side polished Flats: SEMI Standard Surface roughness: ≤ [...]

6″CZ Prime Silicon Wafer

PAM XIAMEN offers 6″CZ Prime Silicon Wafer Item7, 50pcs Silicon wafer: i. Diameter: 150 mm ± .5 mm, ii. Thickness: 675μm ±25μm iii. Doping: P type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: CZ Grade: Prime Resistivity: 1 Ohm-cm to 10 Ohm-cm Surface: single side polished Flats: SEMI Standard Surface roughness: ≤ [...]

4″CZ Prime Silicon Wafer-9

PAM XIAMEN offers 4″CZ Prime Silicon Wafer-9 Item6, 125pcs Silicon wafer: i. Diameter: 100 mm ± 0.5 mm, ii. Thickness: 525μm ±25μm iii. Doping: N type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: CZ Grade: Prime Resistivity: 1 Ohm-cm to 10 Ohm-cm Surface: single side polished Flats: SEMI Standard Surface roughness: ≤ [...]

4″CZ Prime Silicon Wafer-8

PAM XIAMEN offers 4″CZ Prime Silicon Wafer-8 Item5, 125pcs Silicon wafer: i. Diameter:100 mm ± 0.5 mm, ii. Thickness: 525μm ±25μm iii. Doping: P type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: CZ Grade: Prime Resistivity: 1 Ohm-cm to 10 Ohm-cm Surface: single side polished Flats: SEMI Standard Surface roughness: ≤ 5Å For [...]

3″CZ Prime Silicon Wafer-1

PAM XIAMEN offers 3″CZ Prime Silicon Wafer-1 Item4, 50pcs Silicon wafer: i. Diameter: 76.2 mm ± 0.5 mm, ii. Thickness: 375μm ± 25μm iii. Doping: N type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: CZ Grade: Prime Resistivity: 1 Ohm-cm to 10 Ohm-cm Surface: single side polished Flats: SEMI Standard Surface roughness: [...]

6H SiC Wafer

6H SiC Wafer PAM-XIAMEN can offer 6H SiC wafer with n type or semi-insulating, here we make a brief introduction in two parts: 1.Difference Between 6H and 4H polytype: 1)Commercial resistivity of 6H n type SiC Wafer is (0.02~0.1)ohm.cm, while 4H one is (0.015~0.028)ohm.cm. 2)Stacking sequence of 6H SiC substrate is ABCACB, while [...]

InSb Epi Wafer

InSb Epi Wafer Xiamen Powerway offers InSb Epi Wafer with Homogeneous Structure and Hetero-structure: Substrate: InSb, Thickness: 500um, Te doped with doping concentration of 3.4E18cm-3 1st Layer: InSb, Thickness: 4000nm, Si doped (n+) with doping concentration of 3.0E18cm-3 2nd Layer: InSb, Thickness: 250nm, Si doped (n-) with doping concentration of 2.0E15cm-3 3rd [...]

100mm N type GaN substrate

100mm N type GaN substrate PAM-XIAMEN offers larger size of N type FS GaN substrate including Si-doped and undoped one as follows: 4″(100mm) Undoped Free-standing GaN Substrate Item PAM-FS-GaN100-U Conduction Type Undoped Size 4″(100)+/-1mm Thickness 350-450um Orientation C-axis(0001)+/-0.5° Primary Flat Location (1-100)+/-0.5° Primary Flat Length – Secondary Flat Location (11-20)+/-3° Secondary Flat Length – Resistivity(300K) <0.5Ω·cm Dislocation Density <5×10^6cm-2 FWHM – TTV <=35um BOW <=50um Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished Back Surface:1.Fine ground 2.Rough grinded Usable Area ≥ 90 %   4″(100mm) N-doped Free-standing GaN Substrate Item PAM-FS-GaN100-N Conduction Type N-type/Si doped Size 4″(100)+/-1mm Thickness 350-450um Orientation C-axis(0001)+/-0.5° Primary Flat Location (1-100)+/-0.5° Primary Flat [...]

3″CZ Prime Silicon Wafer

PAM XIAMEN offers 3″CZ Prime Silicon Wafer Item3, 50pcs Silicon wafer: i. Diameter: 76.2 mm ± 0.5 mm, ii. Thickness: 375μm ±25μm iii. Doping: P type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: CZ Grade: Prime Resistivity: 1 Ohm-cm to 10 Ohm-cm Surface: single side polished Flats: SEMI Standard Surface roughness: ≤ [...]