A Glance of GaAs Wafer Market According to Mamms Consulting, as one of the most mature compound semiconductors, GaAs is everywhere, and it has become the cornerstone of power amplifiers in every smart phone! In 2018, the GaAs RF business is expected to account for more than 50% of the [...]
Wide Bandgap Technology –Next Generation Power Devices The tightening of industry standards and changes in government regulations are key drivers of higher energy efficiency. For example, data centers are growing exponentially to meet demand. They use about 3% of the world’s total electricity supply (400 kWh) and 2% of total [...]
Near-band-edge luminescence in heavily doped gallium arsenide The near-band-edge photoluminescence at 80K of heavily tellurium-doped degenerate liquid-phase-epitaxial gallium arsenide layers (n=2*1018 cm-3) is investigated. The layers are compensated with shallow germanium acceptors (the values of the degree of compensation are K=0.05-0.7) during the epitaxial growth process. It is established that even [...]
PAM-XIAMEN can offer 2” InGaN/GaN quantum well blue laser diode wafer on sapphire or silicon substrate as follows. The blue GaN LD wafer for commercial applications illustrates the great potential of III-V epitaxial wafers. 1. Specification of 440-460nm Blue GaN LD wafer PAM190909-GAN-LD Item Descriptions Materials Substrate blue laser 440-460nm InGaN 2 inch Sapphire substrate*** GaN Blue LD EPI Wafer Spec Spec LD Epitaxial Wafer Size Growth MOCVD Diameter 50.8 ± 0.2 mm Thickness 430 ± 30 um EPI thickness [...]
Single crystal 6H-SiC MEMS fabrication based on smart-cut technique A new single crystal silicon carbide (SiC) MEMS fabrication process is developed using a proton-implantation smart-cut technique. A 6H-SiC layer with 1.3 µm thickness has been achieved over an oxidized silicon substrate using the proposed technique. TEM analyses of the silicon [...]
PAM-XIAMEN, an epi-provider for GaN LED on Si, can offer high performance blue and green light-emitting diode prototypes that grow 2”, 4”, 6” and 8” gallium nitride (GaN) layers based on LED wafer structure on silicon substrate as well as sapphire substrates. Silicon is a low-cost compared with sapphire substrates, and large diameter silicon wafer [...]
PAM-XIAMEN can offer UV LED epi wafer, which is grown by our MOCVD range from 275nm to 405nm. Ultraviolet electromagnetic radiation, commonly known as UV, is used in many industries and applications. The emerging UV LED will be a competitive technology that can drive new innovative applications. UV-LED has a long service life and [...]
AlGaN template structure report A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing equipment,micropipe density [...]
FWHM and XRD report A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing equipment,micropipe density [...]
Energy resolution report A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing equipment,micropipe density by [...]
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