News

Lapped Wafers

PAM-XIAMEN offers lapped silicon carbide wafers, As-cut wafers are lapped and cleaned to be qualified as lapped wafers. What is wafer lapping? Wafer lapping is a global flattening process that improves wafer flatness by removing surface damage (usually from back grinding). It is most commonly found in silicon carbide. Lapping is [...]

2018-08-07 Read more...

Polishing Wafer

PAM-XIAMEN’ product line includes single-sided polishing (SSP) and double-sided polishing (DSP) wafer substrate or called mirror polished wafer for applications of semiconductors, MEMS, and other chips that require a strictly controlled flatness often require double-sided polishing chips. They are also necessary for a two-sided pattern and device manufacturing project. [...]

2018-08-07 Read more...

The Development Trend of LED Wafer Chip Industry in 2018

The Development Trend of LED Wafer Chip Industry in 2018 Abstract Since 2016, the LED industry has been in a period of rapid development, and by 2018, a new pattern has emerged. Throughout the entire LED industry chain, we can see that the LED wafer chip field is the high-margin link [...]

2018-07-31 Read more...

Physicists reveal material for high-speed quantum internet

Physicists reveal material for high-speed quantum internet Electrical excitation causes a point defect in the crystal lattice of silicon carbide to emit single photons, which are of use to quantum cryptography. Credit: Elena Khavina, MIPT Researchers from the Moscow Institute of Physics and Technology have rediscovered a material that could be [...]

2018-07-25 Read more...

A comparative study of the bonding energy in adhesive wafer bonding

A comparative study of the bonding energy in adhesive wafer bonding Adhesion energies are determined for three different polymers currently used in adhesive wafer bonding of silicon wafers. The adhesion energies of the polymer off-stoichiometry thiol-ene-epoxy OSTE+ and the nano-imprint resist mr-I 9150XP are determined. The results are compared to [...]

2018-07-17 Read more...

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and [...]

2018-07-12 Read more...

Diamond Wafers

Diamond wafers from PAM-XIAMEN are wafer-scale products that are used to tap the huge potential of diamond materials, such as tribological testing, unique nano-scale processing applications and MEMS development. In the current diamond wafer market, there are three grade diamond wafer, Microelectronics Grade diamond wafer, Thermal Grade diamand wafers and slices [...]

2018-07-10 Read more...

5-5-3 SiC Contacts and Interconnect

5-5-3 SiC Contacts and Interconnect All useful semiconductor electronics require conductive signal paths in and out of each device as well as conductive interconnects to carry signals between devices on the same chip and to external circuit elements that reside off-chip. While SiC itself is theoretically capable of fantastic electrical operation under extreme [...]

2018-06-28 Read more...

Progress in bulk GaN growth

Progress in bulk GaN growth* Three main technologies for bulk GaN growth, i.e., hydride vapor phase epitaxy (HVPE), Na-flux method, and ammonothermal method, are discussed. We report our recent work in HVPE growth of GaN substrate, including dislocation reduction, strain control, separation, and doping of GaN film. The growth mechanisms [...]

2018-05-29 Read more...

New graphene fabrication method uses silicon carbide template

New graphene fabrication method uses silicon carbide template Graphene transistors. Georgia Tech researchers have fabricated an array of 10,000 top-gated graphene transistors, believed to be the largest graphene device density reported so far. (PhysOrg.com) — Researchers at the Georgia Institute of Technology have developed a new “templated growth” technique for fabricating [...]

2018-05-17 Read more...