News

808nm laser wafers

Xiamen Powerway(PAM-XIAMEN), a leading developer and manufacturer of compound semiconductor epitaxial wafers, provides 808nm AlGaInP/GaAs laser wafer. AlGaInP laser epitaxial wafers are high-quality semiconductor materials that can emit light in semiconductor lasers. After made on the laser chip, these materials are energized and can emit light. Then, the electrical signals are converted into optical [...]

2016-06-13 Read more...

Analyses of Five Major LED Manufacturers Vertical Integration Strategies (Part 2)

  Analyses of Five Major LED Manufacturers Vertical Integration Strategies (Part 2) In part one of these series, LEDinside explored Philips, Osram and Cree’s vertical integration strategies. In the second part of this series we will take a closer look at major Chinese LED companies MLS and Elech-Tech International’s (ETI) vertical integration strategies. Why [...]

2016-05-10 Read more...

Analyses of Five Major LED Manufacturers Vertical Integration Strategies (Part 1)

Analyses of Five Major LED Manufacturers Vertical Integration Strategies (Part 1) Upheld as the classical business models in the LED industry, Dutch lighting giant Philips and leading German lighting manufacturer Osram business models have been the most discussed among market insiders. The two European companies vertical integration models are considered textbook cases [...]

2016-05-04 Read more...

InGaAs Structure Wafer

 InGaAs Structure Wafer  Indium gallium arsenide (InGaAs), also called gallium indium arsenide, is a common name for a family of chemical compounds of three chemical elements, indium, gallium, and arsenic. Indium and gallium are both boron group elements, often called “group III”, while arsenic is a pnictogen or “group V” element. In semiconductor [...]

2016-04-25 Read more...

Esia: semiconductor sales in line with seasonal patterns

As reported by Esia(European Semiconductor Industry Association), in January worldwide sales of semiconductors amounted to US$ 26.880 billion. These results are in line with seasonal patterns – as the first months of the year are usually slower for semiconductors – and represent a 2.7% drop compared to the December [...]

2016-04-18 Read more...

WSTS recalculates forecast for the worldwide semiconductor market

Worldwide semiconductor market is expected to be slightly positive in 2016 and grow moderately in 2017. WSTS has re-calculated the Autumn 2015 forecast using the actual figures of the fourth quarter 2015. During 2016 growth is expected to be driven by sensors, micros, and logic. All major product categories [...]

2016-03-23 Read more...

Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching

Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching The bowing curvature of the free-standing GaN substrate significantly decreased almost linearly from 0.67 to 0.056 m−1 (i.e. the bowing radius increased from 1.5 to 17.8 m) with increase in inductively coupled plasma (ICP) etching [...]

2016-02-03 , Read more...

Chemical lift-off and direct wafer bonding of GaN/InGaN P–I–N structures grown on ZnO

Highlights •MOCVD growth of a p-GaN/i-InGaN/n-GaN (PIN) solar cell on ZnO/Sapphire templates. •In-depth structural characterizations showing no back-etching of ZnO. •Chemical lift-off and wafer-bonding of the structure on float glass. •Structural characterizations of the device on glass. Abstract p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal organic vapor phase epitaxy using [...]

2016-02-03 , , Read more...