Gallium nitride semiconductors GaN is a compound semiconductor on steroids! if you could make a 10 Watt part on GaAs at a particular frequency, you can probably make a 100 watt part on GaN right now. Gallium nitride is the future of microwave power amps, GaAs has exceeded its half-life, you can quote us [...]
Gallium Nitride Is Non-Toxic, Biocompatible; Holds Promise for Implants, Research Finds Gallium Nitride(GaN) is currently used in a host of technologies, from LED lighting to optic sensors, but it is not in widespread use in biomedical implants. However, the new findings from NC State and Purdue mean that GaN holds [...]
Welcome to our Semiconductor Wafer Maker Member – Xiamen Powerway Advanced Material Co.,Ltd Powerway wafer develops and manufactures wafers with Gallium Arsenide (GaAs), Gallium Nitride (GaN) technologies advanced high-performance RF solutions for customers worldwide. We are a leading semiconductor wafer in market serving customers in mobile devices,3G and 4G base station,WLAN,WiMAX,GPS,defense and aerospace markets. We have GaAs foundry for wafer fabrication and support services. Our [...]
THz Generation Process in LT-GaAs Optical down-conversion is the most successful commercial technique for THz generation using Low temperature grown GaAs (LT-GaAs). The technique is often known as Terahertz Time-Domain Spectroscopy (THz-TDS). This technique works by optical pulse excitation of a photoconductive switch. Here, a femtosecond laser pulse illuminates a [...]
Livermore, CA and Tokyo (Marketwire) – Bridgelux Inc., a leading developer and promoter of LED lighting technologies and solutions, and Toshiba Corporation, a world-leading semiconductor manufacturer, today announced that Bridgelux and Toshiba have achieved the industry’s top class 8″ GaN on SiliconLED chip emitting 614mW, < 3.1V @ 350mA [...]
LED manufacturer Lextar Electronics claims to be the first LED maker in Taiwan to demonstrate blue-light emission from a processed 6-inch-diameter LED wafer. (more…)
Soraa, the world’s leading developer of GaN on GaN （ gallium nitride on gallium nitride ） – solid state lighting technology, announced the launch of its flagship product, the Soraa LED MR16 lamp. The new product is the first LED lamp to provide superior performance to a traditional halogen MR16. It [...]
GaN(Gallium nitride), which is a compound semiconductor,it is a hard, high melting point materials, the melting point of about 1700 ° C, GaN is a high degree of ionizationof III-Vcompound (0.5 or 0.43). At atmospheric pressure, the GaN crystal is generally hexagonal wurtzite structure. In a cell four atoms, the atomic volume is about halfthat of the GaAs. GaN is Non-Toxic. Basic Parameters for Wurtzite crystal structure at 300K: Breakdown field ~5 x 106 V cm-1 Mobility electrons =< 1000 cm2 V-1 s-1 Mobility holes =< 200 cm2 V-1 s-1 Diffusion coefficient electrons 25 cm2 s-1 Diffusion coefficient holes 5 cm2 s-1 Diffusion [...]
What is GaAs? GaAs(Gallium arsenide) is a compound semiconductor material,a mixture of two elements, gallium (Ga) and arsenic (As). The uses of Gallium arsenide are varied and include being used in LED/LD, field-effect transistors (FETs), and integrated circuits (ICs). GaAs Basic Parameters at 300K Crystal structure Zinc Blende Group of symmetry Td2-F43m Number of atoms in 1 [...]
PAM-XIAMEN has announced his 6” GaAs epi wafer are on mass production for PHEMTs and MHEMTs (Pseudomorphic and metamorphic high-electron mobility transistors) ,HBTs(Heterojunction bipolar transistors), MESFETs (Metal-semiconductor field effect transistors) and other device,grown by molecular beam epitaxy (MBE) systems. The GaAs-pHEMT is widely used for high frequency switching devices in wireless systems like [...]
