Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, today announces availability of InGaN substrate materials. InGaN is the key compound semiconductor material used for the fabrication of blue, green, and white light emitting diodes (LEDs),GaN-based ultra violet (UV), blue laser [...]
AX-type defects in zinc-doped GaAs(1−x)P(x) on GaAs GaAsP alloys are potential candidates for ∼ 1.5 to 1.8 eV photovoltaic converters in multijunction solar cells. We use thermally stimulated capacitance, deep level transient spectroscopy, and photocapacitance to characterize defects in p-type GaAs0.83P0.17 and GaAs0.72P0.28 grown lattice-mismatched on GaAs substrates. We observe [...]
Bulk GaN cost to fall 60% to $730 for 2″ substrate by 2020 Wide-bandgap semiconductor materials such as gallium nitride (GaN) offer far higher performance than traditional silicon but cost significantly more. However, by 2020 GaN costs will drop enough for it to become competitive based on performance gains, reckons [...]
In Q4 Discount prices for Universities and Research Institutes We are pleased to inform that PAM-XIAMEN announces the introduction of special Q4 discount prices for universities and research institutes for small size GaN C-plane with n-type and semi-insulating wafers, which are currently on the company’s stock, currently stock size: 5mm*5.5mm, [...]
Bulk GaN Crystal Grown by HVPE We succeeded in preparing very thick c-plane bulk gallium nitride (GaN) crystals grown by hydride vapor phase epitaxy. Growth of the bulk GaN crystals was performed on templates with 3 μm GaN layer grown by metal organic chemical vapor deposition on (0 0 0 [...]
Global and China GaAs-based Device Market Distinct from traditional silicon semiconductor, gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is an III-V semiconductor and is mainly used in handset RF front end like power amplifier (PA). In the 4G era, handset RF front end becomes [...]
InGaAs HEMTs form two-stage gain blocks delivering 9 dB of gain while consuming just 20 mW A TEAM of Taiwanese engineers has used flip-chip packaging to build anInGaAs HEMT delivering up to 6.5 dB of gain at 60 GHz. The researchers argue that one of the strengths of flip-chip technology is [...]
Yellow and Green Luminescence in a Freestanding GaN Template We have studied a broad photoluminescence band in high-mobility freestanding 200-μm-thick GaN template prepared by hydride vapor-phase epitaxy. Variable-excitation intensity and energy experiments showed two defect-related bands: a yellow luminescence (YL) band at about 2.15 eV and a green luminescence (GL) [...]
Veeco MBE reactor for laser diodes IPG Photonics adds 4th Veeco MBE reactor for laser diodes Aug 29, 2012 The tool will be used to manufacture gallium arsenide based devices Veeco Instruments has recently completed installation of a GEN2000 Edge MBE system at IPG Photonics Corporation. The system was delivered to further expand their production of [...]
Advantech Wireless releases GaN whitepaper The company’s paper discusses gallium nitride based solid state power amplifiers for satellite communication Advantech Wireless, a Canadian-based manufacturer of broadcast-quality Satellite, RF Equipment and Microwave Systems has released a new whitepaper titled, “A new generation of Gallium Nitride (GaN) based Solid State Power Amplifiers for [...]
