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Improved process control, lowered costs and reduced risks through the use of non-destructive mobility and sheet carrier density measurements on GaAs and GaN wafers

mproved process control, lowered costs and reduced risks through the use of non-destructive mobility and sheet carrier density measurements on GaAs and GaN wafers Improved process control, lowered costs and reduced risks can be realized through the use of non-destructive mobility and sheet charge density measurements during the fabrication of [...]

2013-10-12 , , Read more...

LT-GaAs

We offer LT-GaAs wafer for THz, detector, ultra-fast-optical experiments and other applications. 1. 2″ LT-GaAs Wafer Specification: Item Specifications Diamater(mm) Ф 50.8mm ± 1mm Thickness 1-2um or 2-3um Marco Defect Density ≤ 5 cm-2 Resistivity(300K) >108 Ohm-cm Carrier ＜1ps Dislocation Density <1×106cm-2 Useable Surface Area ≥80% Polishing Single side polished Substrate GaAs substrate   Remark: Other conditions: 1) GaAs substrate should be undoped/semi-insulating with (100)orientation. 2) Growth temperature: ~ 200-250 C 2. LT-GaAs Introduction: Low-temperature grown GaAs is [...]

2013-10-11 Read more...

Slicing, cleaning and kerf analysis of germanium wafers machined by wire electrical discharge machining

Slicing, cleaning and kerf analysis of germanium wafers machined by wire electrical discharge machining   This paper investigates the slicing of germanium wafers from single crystal, gallium-doped ingots using wire electrical discharge machining. Wafers with a thickness of 350 μm and a diameter of 66 mm were cut using 75 and 100 μm molybdenum [...]

2013-10-11 , , Read more...

Coulometric determination of arsenic in gallium arsenide crystal wafers

Coulometric determination of arsenic in gallium arsenide crystal wafers The determination of small variations in the stoichiometry of undoped, semi-insulating gallium arsenide can be achieved by using constant current coulometry. Samples taken from a wafer are etched in HF, dissolved in NaOH-peroxide solution, then treated with a citric acid buffer. [...]

2013-10-10 , , , , Read more...

Gas filled prototype of a CdZnTe pixel detector

Gas filled prototype of a CdZnTe pixel detector   CdZnTe pixel structures are currently the most promising detectors for the focal planes of hard X-ray telescopes, for astronomical observation in the range 5–100 keV. In Sharma et al. (Proc. SPIE 3765 (1999) 822) and Ramsey et al. (Nucl. Instrum. Methods A 458 [...]

2013-10-09 Read more...

Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers

Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and [...]

2013-09-25 , , , Read more...