PAM XIAMEN offers 3″ FZ Silicon Ingot with Diameter 76mm Silicon ingot, per SEMI, G Ø76mm FZ n-type Si:P[100]±2.0° Ro=(1,500-7,000)Ohmcm, Ground Ingot, NO Flats, MCC Lifetime>1000µs, Oxygen<1E16/cc, Carbon<1E16/cc, Adequately packed, CofC: present. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 2″ FZ Silicon Ingot with Diameter 50mm Silicon ingot, per SEMI, G Ø50mm FZ n-type Si:P[100]±2.0°, Ro=(1,500-7,000)Ohmcm Ground Ingot, NO Flats, MCC Lifetime>1000µs, Oxygen<1E16/cc, Carbon<1E16/cc, Adequately packed, CofC: present. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um, which can be used for Microelectronic application. 1. Specification of Semi-insulating GaAs Substrate 1.1 Semi-insulated GaAs Substrate PAM190425-GAAS Parameter Customer’sRequirements Guaranteed/Actual Values UOM GrowthMethod: VGF VGF — ConductType:. S-I-N S-I-N — Dopant: c doped c doped Diameter: 100.0±0.2 100.0±0.2 mm Orientation: (100)±0.30offtoward (110) (100)±0.30offtoward (110) — OFlocation/length: EJ|0-1-1|±0.50/32.5±1.0 EJ[0-1-1]±0.50/32.5±1.0 — IFlocation/length: EJ|0-11|±0.50/18.0±1.0 EJ[0-11|±0.50/18.0±1.0 — Resistivity: Min:0.6E8 Min:0.8E8 Max:2.4E8 ohm.cm Mobility: Min:4500 Min:4769 Max:6571 cm2/v.s EPD: Max:10000 Min:700 Max:700 /cm2 Thickness: 600±25 600±25 pm Bow: Max:4 Max:4 μm Warp: Max:5 Max:5 μm TTV: Max:3 Max:3 μm TIR:. Max:3 Max:3 pm LFPD: Max:1 Max:1 pm LTV: Max:1.5 Max:1.5 μm PLTV: >90@15mm*15mm >90@15mm*15mm % ParticalCount: <100/wafer(for particle>0.28um); Haze<5ppm <I00/wafer(for [...]
PAM-XIAMEN offers R-Plane（1-102） Sapphire Substrate, single side polished,please see below spec: 2”,R-Plane Sapphire Substrate with SSP No Item Specification 1 Material High Purity Al2O3 2 Diameter 50.8土0.1mm 3 Orientation R-plane<1-102>土0.2° 4 Thickness 430土15um 5 TTV ≤15um 6 Bow ≤10um 7 Warp ≤15um 8 Primary Flat Length 16.0土1.0mm 9 Front suface Roughmess(Ra) Ra≤0.3nm 10 Bock Surtace Roughness(Ra) 0.8~1.2um 11 Primary Flat Orienation A-plane+0.2° 12 Surtace onentation R-Plane土0.2° 13 Laser Mark back side or front side or no laser mark 14 Package 25pcsCassede.Vacum-sealed,Nitrogen-flled,Class-100 Cleanroom 3”,R-Plane Sapphire Substrate with SSP No ltem Specification 1 Material High Purity Al2O3 2 Diameter 76.2土0.2mm 3 Thickness 350土25um 4 Orientation R-plane<1-102>土0.2° 5 Primary Flat Orientation 45+2CCCW on R 6 Primary Flat Lengin 22.0土1.0mm 7 TTV ≤25um 8 Bow -25~0μm 9 Warp ≤30um 10 TIR ≤15um 11 Front Surtace [...]
PAM-XIAMEN offers C-Plane Sapphire Substrate, single side polished or double side polished, please see below spec: 1. Specifications of C-Plane Sapphire Substrate 2” C-plane SSP Sapphire Substrate: No Item Specification 1 Material High PurityAl2O3 2 Diameter 50.8+0.1mm 3 Thickness 430土15um 4 TTV ≤10μm 5 LTV ≤1.5μm 6 Bow -10~0μm 7 Warp ≤10μm 8 Primary Flat Length 16.0土1.0mm 9 Front Surface Roughness(Ra)| Ra≤0.2nm Back Surface Roughness(Ra) 0.7~1.2μm 11 Primary Flat Orientation A-plane土0.2° 12 Surface Orientation C-Plane(0001) off Angle 0.2o+0.1″(M-axis);0°+0.1″(A-axis) 13 Laser Mark back side or frontside 14 Package 25pcs/Cassette, Vacuum-sealed, Nitrogen- filled, Class-100 Cleanroom Remark: C-plane 0/ [...]
PAM-XIAMEN offers SiC(Silicon Carbide) Boule Crystal with available size:2”,3”,4”,6” with two available length:5~10mm or 10~15mm. Fix size is workable such as 10mm, please see below specification of 4”size and 6”size: 1. Specifications of SiC Boule Crystal No.1: 4″ SiC Boule Crystal, Production Grade Polytype: Production- 4H Diameter: Production-100,0 mm+/-0,2 mm [...]
PAM-XIAMEN offers 2inch or 4inch red infrared AlGaAs / GaAs LED epi wafer with wavelength 850-880 nm and 890-910nm: 1. Red Infrared AlGaAs / GaAs LED Epi Wafer PAM-190723-LED Structure Thickness, um Type Composition CC, cm-3 Wide-gap window 1 р AlхGa1-хAs (х=0,25-0,3) (2-5) ∙1018 Barrier layer 0.06 р AlхGa1-хAs (х=0,25-0,3) (0.8-1) ∙1018 Active layer – GaAs undoped – Al0,2Ga0,8As Barrier layer 0.06 n AlхGa1-хAs (х=0,25-0,3) (0.5-1) ∙1017 Wide-gap window 6 n AlхGa1-хAs (1-2)∙1018 (х=0,3-0,35) Stop layer 0.1 – AlхGa1-хAs – (х=0,9-1) Buffer layer – n GaAs – Substrate – n+ GaAs – 2. Where is the Red Infrared Wavelength? See below picture [...]
PAM-XIAMEN can offer InGaSb material substrate, which can be used for InGaSb photodetectors, InGaSb/GaAs quantum dots (QDs), InGaSb-on-insulator for p-MOSFET, and InGaSb/InAs superlattice materials for infrared photodiodes in the very long-wavelength infrared (VLWIR) range It can be grown on GaAs substrate, GaSb (111)A substrate and GaSb(111)B substrate by MBE, and [...]
PAM-XIAMEN can offer 850nm and 940nm infrared LED wafer by MOCVD. 850nm and 940nm infrared LED refers to the infrared wavelength with the peak value of 850nm or 940nm, but there is also a small amount of light in the visible light area, so it can also see the weak [...]
PAM-XIAMEN offers Ultra Thin GaAs Wafer with both side polished, which is for high-end products in the communication electronics or optoelectronics. The general thickness of the existing GaAs wafer is over 350μm, and the target thickness of the ultra-thin grinding disc is 100μm. PAM190709-GAAS with n type and undoped as follows: 1. Specifications of Ultra [...]
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