PAM XIAMEN offers 4″ Monocrystalline silicon wafers with insulating oxide 4″ Monocrystalline silicon wafers with insulating oxide Polishing: one-sided for microelectronics Thickness: 675 +/- 20 microns TTV <15 μm, Warping <35 μm P type Orientation <100> The thickness of the insulating oxide layer is 300 nm Resistance of the base plate ≥ 10 ohm * cm For more [...]
PAM XIAMEN offers 2″ Monocrystalline silicon wafers with insulating oxide 2″ Monocrystalline silicon wafers with insulating oxide Polishing: one-sided for microelectronics Thickness: 675 +/- 20 microns TTV <15 μm, Warping <35 μm P type Orientation <100> The thickness of the insulating oxide layer is 300 nm Resistance of the base plate ≥ 10 ohm * cm For more [...]
PAM-XIAMEN offers C doped GaAs wafer, which is also called semi-insulating GaAs wafer. Undoped gallium arsenide wafer is applied to the field of microelectronics and mainly used to make radio frequency (RF) power devices. GaAs single crystal growth methods include VGF, VB, and LEC. No1. C doped GaAs wafer, 2”size Diameter:50.8 mm [...]
PAM XIAMEN offers 6″CZ Prime Silicon Wafer-1 Item8, 25pcs Silicon wafer: i. Diameter: 150 mm ± 0.5 mm, ii. Thickness: 675μm ±25μm iii. Doping: P type iv. Orientation: (111) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: CZ Grade: Prime Resistivity: 1 Ohm-cm [...]
PAM XIAMEN offers 6″CZ Prime Silicon Wafer Item7, 50pcs Silicon wafer: i. Diameter: 150 mm ± .5 mm, ii. Thickness: 675μm ±25μm iii. Doping: P type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: CZ Grade: Prime Resistivity: 1 Ohm-cm [...]
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-8 Item5, 125pcs Silicon wafer: i. Diameter:100 mm ± 0.5 mm, ii. Thickness: 525μm ±25μm iii. Doping: P type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: CZ Grade: Prime Resistivity: 1 Ohm-cm to [...]
PAM XIAMEN offers 3″CZ Prime Silicon Wafer-1 Item4, 50pcs Silicon wafer: i. Diameter: 76.2 mm ± 0.5 mm, ii. Thickness: 375μm ± 25μm iii. Doping: N type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: CZ Grade: Prime Resistivity: 1 [...]
PAM-XIAMEN can offer 6H SiC wafer with n type or semi-insulating. Silicon carbide wafer is a material presenting different crystalline structures called polytypes, which has more than 250 structures. Different polytypes has different atomic stacking sequences. Polytypes generate the cubic, hexagonal or rhombohedral structures, which include 50% C atoms bonded with [...]
Xiamen Powerway offers InSb (indium antimonide) epi wafer with homogeneous structure, which can be used to detect infrared radiation with a wavelength of 8~12um. Homoepitaxial InSb epi wafer on InSb substrate can improve the operating temperature of indium antimonide detector. InSb epi ready wafer 1. InSb Homogeneous Structures 1.1 InSb Epi Wafer Structure (PAMP19142-INSBE) InSb [...]
PAM-XIAMEN offers larger size of N type FS GaN substrate including Si-doped and undoped one as follows: 1. N Type GaN Substrate Datasheet 1.1 4″(100mm) Undoped Free-standing GaN Substrate Item PAM-FS-GaN100-U Conduction Type Undoped Size 4″(100)+/-1mm Thickness 350-450um Orientation C-axis(0001)+/-0.5° Primary Flat Location (1-100)+/-0.5° Primary Flat Length – Secondary Flat Location (11-20)+/-3° Secondary Flat Length – Resistivity(300K) <0.5Ω·cm Dislocation Density <5×10^6cm-2 FWHM – TTV <=35um BOW <=50um Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished Back Surface:1.Fine ground 2.Rough grinded Usable Area ≥ 90 % 1.2 4″(100mm) N-doped Free-standing GaN Substrate Item PAM-FS-GaN100-N Conduction Type N-type/Si [...]
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