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GaN LED Epi on Sapphire

Powerway Wafer offers III-nitride GaN LED Epi wafer on flat or patterned Sapphire as listed below, which emits blue or green lights. The GaN LED market size is 50mm, 100mm, 150mm or 200mm. The GaN LED emission wavelength can reach 530nm. A high crystal quality GaN can be gained by depositing a buffer layer at low [...]

Diamond Substrate

CVD diamond substrate film is available with a maximum working temperature at 600℃ from PAM-XIAMEN at below spec. Single crystal diamond material has the highest thermal conductivity among natural substances known at present. Diamond substrate has stable chemical properties, good electrical insulation and low dielectric constant. The thermal expansion coefficient of diamond substrate is [...]

3″ Silicon Wafer-20

PAM XIAMEN offers 3″ Silicon Wafer-20 Si wafer Orientation: (111) ± 0.5° Type: n-type Dopant: P Diameter: 76.2 ± 0.3 mm Thickness: 380 ± 25 um Disorientation: 2° to <11-2> Resistivity: < 0.003 Ohm*cm Single side polished C Phos > E19 atom/cm3 Oi < 1E18 atom/cm3 Cs < 4E16 atom/cm3 For more [...]

3″ Silicon Wafer-18

PAM XIAMEN offers 3″ Silicon Wafer-18 Si wafer Orientation: (100) ± 0.5° Type: n-type Dopant: P Diameter: 76.2 ± 0.3 mm Thickness: 380 ± 25 um Disorientation: 4° to <110> Resistivity: < 0.005 Ohm*cm single side polished For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

80+1mm FZ Si Ingot-1

PAM XIAMEN offers 80+1mm FZ Si Ingot-1 FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

60+1mm FZ Si Ingot -2

PAM XIAMEN offers 60+1mm FZ Si Ingot -2 FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

80+1mm FZ Si Ingot

PAM XIAMEN offers 80+1mm FZ Si Ingot FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Semi-insulating GaAs substrates 3 inch

Dia 3 inch semi insulating GaAs substrate is available. GaAs materials are mainly divided into two categories: semi-insulating gallium arsenide material and semiconductor gallium arsenide material. Here we will discuss the semi-insulating gallium arsenide material. Semi-insulating property is a basic physical property of gallium arsenide material, and it is a very important property. [...]