Undoped InP Wafer
Undoped InP Wafer PAM-XIAMEN offer low doped InP wafer substrate, see the following: InP wafer,2” (PAM-190507-INP) Diameter – 50.8±0.5 mm; Thickness – 350±25 µm; N type, low doped Dopant – low doped Orientation – (100)±0.5° Flat orientation – SEMI-E/J; Major flat orientation – (0-1-1) ±0.5° Major flat length – 16.0±1.0 mm; Minor flat orientation – (0-11); [...]