CZT and MCT crystal

PAM XIAMEN offers CZT and MCT crystal.

CZT and MCT crystal are new semiconductors which enables effective conversion of radiation to electron. The technology will reform radiography and radiation measurement in medical and industrial areas. We both provides the standard substrate , CZT and MCT crystal for research and industrial use on-line, and manufactures detector grade Schottky components upon customer request.

CZT Substrates

CdTe doped with Zn, P type , (CZT ) (111) 10x10x 1.0mm,2sp
CdZnTe (111) P type, 10x5x1.0mm 2sp
CdZnTe (111) P type, 5x5x0.5mm 1sp
CdZnTe (111) P type, 5x5x1.0mm 2sp
CdZnTe (111)B, with Zn concentration around 14% , P type, 10.5×10.5×1.0mm 1sp R:>1E6 ohm.cm

For more information, please contact us email at [email protected].com and [email protected]

2019-04-19

Effect of Mn on the low temperature growth of GaAs and GaMnAs

Effect of Mn on the low temperature growth of GaAs and GaMnAs With the combined use of reflection high energy electron diffraction (RHEED) and scanning tunneling microscope, the growing surfaces of GaAs and GaMnAs were investigated. At the start of GaAs growth at low temperature [...]

2014-03-28meta-author low temperature growth of GaAs

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Temperature dependent growth of InGaN/GaN single quantum well

Temperature dependent growth of InGaN/GaN single quantum well InGaN/GaN single quantum well (SQW) structures under various InGaN growth temperatures have been grown by metal organic chemical vapor deposition (MOCVD), the surface morphologies and optical properties are investigated. The radius of the typical V-pits on the [...]

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Assessment of the overall resource consumption of germanium wafer production for high concentration photovoltaics

Assessment of the overall resource consumption of germanium wafer production for high concentration photovoltaics The overall resource requirements for the production of germanium wafers for III–V multi-junction solar cells applied in concentrator photovoltaics have been assessed based on up to date process information. By employing [...]

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2″ silicon wafers Thickness:1000 ±25μm

PAM XIAMEN offers 2″ silicon wafers Thickness:1000 ±25μm. 2’’ silicon wafers Ra < 4 nm (100) Thickness1000 ±25μm Doped (no requirement for resistivity and type, resistivity and type will be shown on test report when shipment) 2 sides polished With flat (SEMI STD) For [...]

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[email protected] [email protected]

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

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PAM-XIAMEN Offers photoresist plate with photoresist
Read More

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A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

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PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

CZT and MCT crystal

CZT and MCT crystal

CZT Substrates

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