

Ultra High Flux 2-D CdZnTe Monolithic Detector Arrays for X-Ray Imaging Applications The performance of 2-D CdZnTe monolithic detector arrays designed for high flux X-ray imaging applications was studied. For the first time we have obtained 5 times 106 counts/s/mm2 count-rate for aCdZnTe pixelated detector array. This count-rate is more [...]
Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching The bowing curvature of the free-standing GaN substrate significantly decreased almost linearly from 0.67 to 0.056 m−1 (i.e. the bowing radius increased from 1.5 to 17.8 m) with increase in [...]
PAM XIAMEN offers 4″Prime Silicon Wafer with double side lapping 4″ CZ crystal Si wafer N type doped P Orientation<111> Resistivity 12-15Ωcm Thickness 205-220μm Prime Flat32.5±2.5mm no need for DSP, just double side lapping For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]
PAM XIAMEN offers 650 RC LED Wafer.. P+ GaP 100nm (For ITO) P GaP 2um P AlGaAs/AlAs DBR X 10 P AllnP I AlGaInp MQW N AllnP N AlGaAs/AlAs DBRX30 N GaAs buffer N-GaAs substrate (15degree off) For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen [...]
PAM XIAMEN offers 2″ Monocrystalline silicon wafers with insulating oxide 2″ Monocrystalline silicon wafers with insulating oxide Polishing: one-sided for microelectronics Thickness: 675 +/- 20 microns TTV <15 μm, Warping <35 μm P type Orientation <100> The thickness of the insulating oxide layer is 300 nm Resistance of the base plate ≥ 10 [...]
P Type GaN Template PAM-XIAMEN Offers p type GaN Template Published on December,27, 2012 Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, today announces mass production of p type Mg doped GaN template. “Now we can offer wide range [...]