Investigation of Te inclusions in CdZnTe crystalline material using Raman spectroscopy and IR techniques

  • Home
  • News
  • Investigation of Te inclusions in CdZnTe crystalline material using Raman spectroscopy and IR techniques

Investigation of Te inclusions in CdZnTe crystalline material using Raman spectroscopy and IR techniques

IR images reveal that Te inclusions exist in CdZnTe crystal in the form of square, hexagonal and triangular shapes. The density of Te inclusions for sizes above 5 μm sharply varied from 2.27 × 103 cm−2 to 4.52 × 105 cm−2 with a consequent reduction in IR transmittance from ∼60.5% to ∼55% when the Te-rich volume increased to 83 ppma. Raman spectra suggested that the origin of a new peak at 262.5 cm−1 could be a secondary phonon with A1 symmetry and E symmetry of Te inclusions. The peaks of triangular Te inclusions in Te-rich CdZnTe wafers were shifted to high energy, suggesting that compressive stress existed around the Te inclusions.
 
Fig. 1. Raman scattering spectra of CZT crystals grown under different Te-rich volume conditions.
Source: Vacuum
If you need more information about Investigation of Te inclusions in CdZnTe crystalline material using Raman spectroscopy and IR techniques, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.
2013-11-15 , , ,

Share this post

Related Posts

Silicon Carbide Circuits

Silicon Carbide Circuits on the Way   Although silicon is the semiconducting material of choice in the majority of applications in electronics, its performance is poor where large currents at high voltages have to be controlled. For about 50 years, scientists have been eyeing silicon carbide [...]

2014-09-04meta-author , ,
YAG Crystals-1

PAM XIAMEN offers Nd YAG Nd Doped Yttrium Aluminium Garnet Laser Crystal. Main Specifications dimensional tolerance： Dia：< +/-0.025 mm ,length: < +/-0.5 mm flatness： λ/8 @633nm Surface fineness： 10/5 flatness： 20 arc sec. verticality： 5 arc min orientation： <111> crystalline direction,< +/-0.5° coating film： AR coating, HR Coating reflect： R<0.2%@1064, HR:R>99.8%@1064,R<5%@808nm, clear aperture： >95% central area wavefront distortion： <7mm diameter : <λ/8 per inch @ 633nm, 7mm diameter : <λ/10per inch @ 633nm Publications related to YAG laser crystals:  [1] J. E. Geusic et al., “Laser oscillations in Nd-doped yttrium aluminum, yttrium gallium and gadolinium garnets”, Appl. Phys. Lett. 4 (10), 182 (1964) [2] D. Y. Shen et al., “Highly efficient in-band pumped Er:YAG laser [...]

2019-03-15meta-author
4″ Silicon Wafer-1

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] ±0.5° 4″ 500 P/E FZ >10,000 Prime, TTV<5μm p-type Si:B [110] ±0.5° 4″ 200 P/P FZ 1-2 SEMI Prime p-type Si:B [110] ±0.5° 4″ 200 P/P FZ 1-2 Prime p-type Si:B [110] ±0.5° 4″ 200 P/P FZ 1-2 SEMI Prime, Extra 8 scratched wafers in cassette free of charge p-type Si:B [100] 4″ 220 ±10 P/E FZ >10,000 SEMI Prime p-type Si:B [100] 4″ 230 ±10 P/E FZ >10,000 SEMI Prime p-type Si:B [100-4° towards[110]] ±0.5° 4″ 525 P/E FZ >2,000 SEMI Prime, TTV<5μm p-type Si:B [100] 4″ 450 P/P FZ 1,000-2,000 SEMI Prime p-type Si:B [100] 4″ 420 C/C FZ 850-900 SEMI Prime p-type Si:B [100] 4″ 200 ±10 P/P FZ 100-120 SEMI Prime p-type Si:B [100] 4″ 250 P/P FZ 1-3 {0.97-1.01} SEMI [...]

2019-03-05meta-author
4″ Silicon Wafer-1

PAM XIAMEN offers 4″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity  Thickness Surface Grade 100 N Phos CZ -100 1-20 43768 P/P PRIME 100 N Phos CZ -100 1-20 40-60 P/P PRIME 100 N Phos CZ -100 1-20 80-100 P/P PRIME 100 N Phos CZ -100 1-20 180-200 P/P PRIME 100 N Phos CZ -100 300-350 P/P PRIME 100 N Phos CZ -100 1-20 300-350 P/E PRIME 100 N Phos CZ -100 350-400 P/P PRIME 100 N Phos CZ -100 1-3 350-400 P/P PRIME 100 N As CZ -100 .001-.005 375-425 P/P PRIME 100 N Phos CZ -100 1-20 375-425 P/E PRIME 100 N Phos CZ -100 450-500 P/P PRIME 100 N As CZ -100 .001-.005 450-500 P/P PRIME 100 N Sb CZ -100 .005-.02 450-500 P/P PRIME 100 N Phos FZ -100 >3000 450-500 P/P PRIME 100 N As CZ -100 .001-.005 500-550 P/E PRIME 100 N Sb CZ -100 .005-.02 500-550 P/E PRIME 100 N Phos FZ -100 >3000 500-550 P/E PRIME 100 N Phos CZ -100 1-20 500-550 P/E PRIME 100 N Phos CZ -100 1-20 500-550 P/E/DTOx PRIME 100 N Phos CZ -100 1-20 500-550 P/E/Ni PRIME 100 N Phos CZ -100 1-20 500-550 P/E/OX PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]

2019-03-04meta-author
4″ FZ Prime Silicon Wafer

PAM XIAMEN offers 4″ FZ Prime Silicon Wafer. 4”FZ P-type orientation 111 thickness 400±15 Resistivity 15000Ωcm polished side 1 Acid etched side 2 life time 1000 SEMI STD DISLOCATION DENSITY 500 max/ cm2 TTV/TAPER 12μm max For more information, please visit our website: https://www.powerwaywafer.com, [...]

2019-06-24meta-author
8″ Silicon Wafer As-cut

PAM XIAMEN offers 8″Silicon As-cut Wafer According to the production process, silicon wafers can be divided into as-cut wafer, lapped wafer, etched wafer and polished wafer.The first process of silicon wafer processing is orientation, roll grinding and square cutting. Silicon single crystal directional cutting can [...]

2020-06-12meta-author