

PAM XIAMEN offers Silicon Ingots. Material Description FZ NTD 3″Ø ingot n-type Si:P[111] ±2°, Ro: 50-60 Ohmcm, MCC Lifetime>400μs, (2 ingots: 197mm, 277mm) SEMI FZ 8″Ø ingot n-type Si:P[100] ±2.0°, Ro: 163-174 Ohmcm, MCC Lifetime>14581μs, (1 ingot: 83mm) FZ 6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 Ohmcm, MCC Lifetime>1777μs, FZ 6″Ø ingot p-type [...]
(11-22) Plane U-GaN Freestanding GaN Substrate PAM-XIAMEN offers (11-22) Plane U-GaN Freestanding GaN Substrate Item PAM-FS-GAN(11-22)- U Dimension 380+/-50um Thickness 350 ±25 µm 430 ±25 µm Orientation (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers PbSe single crystal substrate. Lead selenide (PbSe), or lead(II) selenide, a selenide of lead, is a semiconductor material. It forms cubic crystals of the NaCl structure; it has a direct bandgap of 0.27 eV at room temperature. (Note that incorrectly identifies [...]
780nm laser wafers Structure1: 780nm LD structures P+ GaAs P>5E19, d=0.15μm P- AlGaInP and undoped AlGaInP d~1.5μm Undoped GaInAsP QW PL:765+-10nm Undoped AlGaInP and N- AlGaInP , d~1.5μm N GaAs buffer N GaAs substrate N=(0.4~4)×1018 d=350~625μm (100) 10°off <111>A Structure2: Xiamen Powerway(PAM-XIAMEN), a leading developer and manufacturer of compound semiconductor epitaxial wafers providing 780nm [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment Intrinsic Si:- [211] ±0.1° 4″ 275 P/P FZ >3,000 SEMI Prime, TTV<2μm Intrinsic Si:- [111] ±0.5° 4″ 500 P/P FZ >25,000 SEMI Prime p-type Si:B [110] ±0.5° 4″ 525 P/E 4-6 SEMI Prime, 2 Flats at [111], Secondary 70.5° CW from PF p-type Si:B [110] 4″ 525 P/E 2-10 PF<111> SF 109.5° p-type Si:B [100] 4″ 300 P/E 800-5,400 SEMI Prime p-type Si:B [100] 4″ 500 P/P 10-20 SEMI Prime p-type Si:B [100] 4″ 3000 P/E/P 10-15 SEMI Prime, Individual cst p-type Si:B [100-6°] 4″ 250 P/E 8-12 SEMI Prime p-type Si:B [100] 4″ 275 P/P 7-14 SEMI Prime, TTV<5μm p-type Si:B [100] 4″ 300 P/E 7-14 SEMI Prime, TTV<5μm p-type [...]
PAM XIAMEN offers Borosilicate Float Glass from SCHOTT. We have a large selection of Borofloat 33 glass wafers in all sizes. We have borofloat as thin as 100 microns. Borofloat 33 is the sanme as Pyrex 7740 and have the same anondic bonding properties. Diameters [...]