IR images reveal that Te inclusions exist in CdZnTe crystal in the form of square, hexagonal and triangular shapes. The density of Te inclusions for sizes above 5 μm sharply varied from 2.27 × 10³ cm⁻² to 4.52 × 10⁵ cm⁻² with a consequent reduction in IR transmittance from ∼60.5% to ∼55% when the Te-rich volume increased to 83 ppma. Raman spectra suggested that the origin of a new peak at 262.5 cm⁻¹ could be a secondary phonon with A1 symmetry and E symmetry of Te inclusions. The peaks of triangular Te inclusions in Te-rich CdZnTe wafers were shifted to high energy, suggesting that compressive stress existed around the Te inclusions.

 

Fig. 1. Raman scattering spectra of CZT crystals grown under different Te-rich volume conditions.

Source: Vacuum

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