Silicon carbide has a chemical formula of SiC and a molecular weight of 40.1. Although the chemical formula is simple, it has a wide range of applications, which is determined by the silicon carbide polytypes. Structure={components, relationship between components} Silicon carbide is a simple substance, and the components are carbon [...]
2021-04-26meta-author
PAM XIAMEN offers Free Standing GaN Single Crystal Substrates with LED grade and LD grade for research or mass production, and our GaN crystal substrates has low dislocation density<=10^5 /cm2 without visible micro defects, the substrate has uniform smooth surface for epi-growth. Below carrier [...]
2019-03-11meta-author
We offer GaAs Epitaxial Wafers for Schottky Diode as follows: 1. GaAs Schottky Diode Epi Structures No.1 GaAs Schottky Diode Epiwafer Epitaxial Structure PAM210319 No. Material Composition Thickness Target(um) Thickness Tol. C/C(cm3) Target C/C Tol. Dopant Carrrier Type 4 GaAs 1.00 ±10% ＞5.0E18 N/A Si N++ 3 GaAs 0.28 ±10% 2.0E17 ±10% Si N 2 Ga1-xAlxAs x=0.50 1 ±10% — N/A — — 1 GaAs 0.05 ±10% — N/A — — Substrate: 2”,3”,4″ No.2 4Inch GaAs Epitaxial Wafer for Schottky Diode PAM210326 -SDE No. Material Thickness Doping Doping Concentration 3 GaAs schottky contact layer – n – 2 GaAs ohmic contact layer – – 5×10^18 cm-3 1 Low temperature GaAs 2um – – 0 Semi-insulating GaAs (100) [...]
PAM-XIAMEN offers 1550nm laser diode wafer, which is an epitaxial wafer of a diode laser structure emitting around 1550 nm (on InP substrate), and the wafer dimension for laser diode 1550nm can be 2” or 3”. You can fabricate a laser for your application such [...]
2019-03-13meta-author
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 3″ 1500 P/E 5-7 SEMI Prime n-type Si:P [100] 3″ 350 P/P 1-5 SEMI Prime n-type Si:P [100] 3″ 350 P/P 1-25 SEMI Prime, TTV<1μm, Empak cst n-type Si:P [100] ±1° 3″ 500 P/P 1-100 SEMI Prime, TTV<2μm, Empak cst n-type Si:P [100-4°] ±0.5° 3″ 500 P/E 1-20 Prime n-type Si:P [100] 3″ 650 P/P 1-10 Prime, TTV<2μm n-type Si:P [100] 3″ 1000 P/P 1-5 SEMI Prime, hard cst n-type Si:P [100] 3″ 1000 P/E 1-20 SEMI Prime n-type Si:P [100] 3″ 6000 P/E 1-20 SEMI Prime, Individual cst n-type Si:Sb [100] 3″ 300 P/E 0.02-0.04 SEMI Prime, in hard cassettes of 2 wafers n-type Si:Sb [100] 3″ 381 P/E 0.008-0.020 SEMI Prime n-type Si:As [100] 3″ 380 P/EOx 0.001-0.005 SEMI Prime, LTO Back-side seal [...]
2019-03-06meta-author
This paper investigates the hydrogen plasma treatment effects on the interface of Au/CdZnTe contact. Hydrogen plasma with high energy is the smallest and lightest atomic mass, which is easy to enter into the crystal surface to fill the vacancy defects. The Au/CdZnTe samples were treated [...]
