PAM XIAMEN offers 50.8mm Si wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2063
p-type Si:B
[111]
2″
500
P/P
0.003–0.005
Prime, 2 Flats (2nd @ 45°), hard cst
PAM2064
p-type Si:B
[111]
2″
280
P/E
0.001–0.005
SEMI Prime, 1Flat, hard cst
PAM2065
p-type Si:B
[111]
2″
1000
P/E
0.001–0.005
SEMI Prime, 1Flat, hard cst
PAM2066
p-type Si:B
[111]
2″
1000
P/E
0.001–0.005
SEMI Prime, 1Flat, hard cst
PAM2067
p-type Si:B
[111] ±0.5°
2″
500
P/P
<0.01
SEMI Prime, 1Flat, [...]
2019-02-18meta-author
PAM-XIAMEN is able to supply nitrogen (N) doped silicon wafers, specifications please refer to:
https://www.powerwaywafer.com/silicon-wafer.
The doping of nitrogen as an impurity into silicon crystals not only has a beneficial effect on the performance of silicon wafers, but also has an important impact on the physical [...]
2024-04-16meta-author
We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed AlGaN/GaN HEMT [...]
2018-01-10meta-author
We investigated the effects of the substrate off-angle on the m-plane GaN Schottky diodes. GaN epitaxial layers were grown by metal–organic chemical vapor deposition on m-plane GaN substrates having an off-angle of 0.1, 1.1, 1.7, or 5.1° toward . The surface of the GaN epitaxial layers on [...]
2019-12-16meta-author
PAM-PA01 series are pixel electrode structured detectors based on CZT crystal. They can detect X-ray, γ-ray and imaging. They have a high energy and space resolution.
1. Specification of CZT High Resolution Pixel Detector
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
10.0×10.0mm2
Thickness
2.0mm
5.0mm
Pixel size
1.1×1.1mm2
Pixel array
8×8
Electrode material
Au
Operation temperature
-20℃-+40℃
Energy range
20KeV~700MeV
20KeV~700MeV
Energy resolution(22℃)
<6%@59.5KeV
<4.5%@122KeV
<3%@662KeV
Defective pixel(DP)
10℃~40℃
Storage temperture
20%-80%
Remarks
Customized available
2. Spectrum of [...]
2019-04-24meta-author
PAM XIAMEN offers 4″ FZ Silicon Ingot with Diameter 100.7±0.3mm
Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-05-27meta-author