PAM XIAMEN offers CeO2 Epi-thin film on YSZ Alloy.
CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm
CeO2 Film (40 nm one side) on YSZ <110> 10x10x0.5 mm.
CeO2 Film (40 nm one side) on YSZ, <111>10x10x0.5 mm, 1sp
Due to the rapid changes in the semiconductor wafer market and our production lines, our supply capacity will change with it, but the changes will not be shown on our website. So we reserve the right to explain all the information on our website.
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.