SiC wafer can be used to manufacture BJT (bipolar junction transistor) devices with low conduction resistance and high blocking voltage up to tens of kilovolts. For applications with a blocking voltage of 4.5kV and higher, bipolar SiC power devices will have more practical application value than unipolar SiC power [...]
2023-11-28meta-author
PAM XIAMEN offers (111) Silicon Wafers.
If you don’t see what you need then please email us your specs.
Diam
(mm)
Material
Dopant
Orient.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
6″
n-type Si:P
[111] ±0.5°
300 ±15
P/P
FZ >6,000
SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
7″
n-type Si:P
[111] ±0.5°
300 ±15
P/P
FZ >6,000
SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
8″
Intrinsic Si:-
[111] ±0.5°
750
E/E
FZ >10,000
SEMI notch, TEST (defects, [...]
2019-02-22meta-author
PAM-XIAMEN offers 10*10mm2 SI (Semi-insulating) Freestanding GaN Substrate, which has a resistivity greater than 106 ohm-cm. Semi-insulating gallium nitride substrate with the advantages high critical breakdown electric field and good thermal stability are widely used in high-frequency and high-power devices. Following listed is one of the specifications:
1. [...]
2020-08-17meta-author
Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching
In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by [...]
2013-03-29meta-author
PAM XIAMEN offers high-quality Al2O3 (Sapphire).
R-Plane (1-102)
Square Al2O3(11-02) substrate
Al2O3- Sapphire Wafe, R Plane, 5x5x0.5mm, 1SP
Al2O3-Sapphire Wafe, R Plane, 5x5x0.5mm, 2SP
Al2O3- Sapphire Wafer, R Plane, 10x10x0.5mm, 1SP
Al2O3-Sapphire Wafer, R Plane, 10x10x0.5mm, 2SP
Al2O3- Sapphire Wafer, R Plane, 10x10x1.0mm, 1SP
Al2O3-Sapphire Wafe, R Plane, 0.5″x0.5″x0.5 [...]
2019-04-16meta-author
VCSEL Laser Wafer Chip
PAM-XIAMEN offer 850 nm,850nm and 940nm VCSEL(vertical-cavity surface-emitting laser) epitaxial wafer for the tele communication, gesture recognition,3D imaging and other applications, which is grown by MOCVD by with GaAs/AlGaAs multiple quantum wells (MQWs) as the active layer.
We have three items: VCSEL [...]
2020-04-23meta-author