Ceramic Substrate-15

PAM XIAMEN offers Quartz Frit.

1” Diameter Porous Quartz Frits with Optional Porosity, 1 pc

Specifications

Diameter – mm	25
Thickness – mm	4
Porosity	15~40um or 4~15um (Please select the pore size in the optional bar)

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

2019-04-18

808nm laser diode wafers

PAM XIAMEN offers 808nm laser diode wafers. composition thickness dopping GaAs 150nm C,P=1E20 AlGaAs layers 1.51um C AlGaInAs QW AlGaAs layers 2.57um Si GaAs substrate 350um N=1-4E18 For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced [...]

2019-03-13meta-author

Nuclear reactor pulse calibration using a CdZnTe electro-optic radiation detector

Nuclear reactor pulse calibration using a CdZnTe electro-optic radiation detector A CdZnTe electro-optic radiation detector was used to calibrate nuclear reactor pulses. The standard configuration of the Pockels cell has collimated light passing through an optically transparent CdZnTe crystal located between crossed polarizers. The transmitted [...]

2013-12-05meta-author CdZnTe, Electro-optic, Pockels cell, Reactor pulsing

Porous GaN/SiC templates for homoepitaxial growth: effect of the built-in stress on the formation of porous structures

Formation of porous structures in GaN/SiC heterostructures in light of the need for porous templates for improved GaN epitaxial growth has been studied. It has been observed that the built-in stress in the heterostructures greatly affects the process of porous structure formation. As a [...]

2018-01-30meta-author

Acuity Brands LED Luminaires Win Prestigious Lighting for Tomorrow Award

Three decorative LED luminaires from Acuity Brands were selected to receive a 2016 Lighting for Tomorrow (LFT) award. The annual competition was created in 2002 to recognize the best decorative, energy-efficient luminaires in the market, and is organized by the American Lighting Association, the Consortium for Energy Efficiency [...]

2016-09-14meta-author

Effects of post-growth annealing on the performance of CdZnTe:In radiation detectors with different thickness

Effects of post-growth annealing on the performance of CdZnTe:In radiation detectors with different thickness An effective post-growth annealing method was used to improve the performance of CdZnTe:In (CZT:In) radiation detectors. The results indicated that Te inclusions in CZT:In crystals with different thickness were eliminated completely [...]

2013-11-26meta-author CdZnTe:In, IR transmittance, Resistivity, Te inclusions

YSGG single crystal

PAM XIAMEN offers YSGG single crystal. PAM XIAMEN is developing a series of doped GGG single crystal for nest generation Magneto-optical device. Composition GGG YSGG S-GGG（CaMgZr：GGG） NGG GYSGG GSGG (Cubic) Gd3Ga5O12 Y3Sc2Ga3O5 Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12 Nd3Ga5O12 Gd0.63Y2.37Sc2Ga3O12 Gd3Sc2Ga3O12 Lattice constant 12.376 Å 12.426 Å , 12.480 Å 12.505Å 12.507 Å , 12.554 Å , Diffraction（2θ） 51º7′ 50º44′ 50º43′ 50º41′ 50º40′ 50º22′ Melting Point ~1800 oC ~1877℃ ~1730 oC ~1550 oC ~1730 oC ~1730 oC For more information, please visit our website: https://www.powerwaywafer.com, send us email at [...]

2019-05-21meta-author

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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CdZnTe (CZT) Wafer

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PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

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PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

Ceramic Substrate-15

Ceramic Substrate-15

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