PAM XIAMEN offers Pyrolytic Graphite Substrate.
Pyrolytic Graphite is a unique form of graphite manufactured by decomposition of a hydrocarbon gas at very high temperature in a vacuum furnace. It is nucleated on substrate and grown with texture along C axis . The result is an ultra-pure product which is near theoretical density and extremely anisotropic. The material is grown onto a substrate giving it a layered composition. This also means it has different properties in different planes. In the C plane (across its layers) it has low thermal conductivity, acting as an insulator. In the A-B plane (with the layers) it has very high thermal conductivity, acting as a superb conductor. All values are taken at room temperature, unless noted otherwise.
|PROPERTY||US VALUE||METRIC VALUE|
|Density||0.079||lb/in 3||2.2||gr/cm 3|
|Flexural Strength – AB||13000||psi||89.6||mpa|
|Compressive Strength – AB||15000||psi||103.4||mpa|
|Compressive Strength – C||25000||psi||172.4||mpa|
|Shear Strength – AB||1000||psi||6.9||mpa|
|CTE – AB||0.8||in/in °F x 10 -6||0.5||Microns/m °C|
|CTE – C||11||in/in °F x 10 -6||6.5||Microns/m °C|
|Thermal Conductivity – AB||232||BTU/(h.ft 2 °F/ft)||400||W/(m 2 . K/m)|
|Thermal Conductivity – C||2||BTU/(h.ft 2 °F/ft)||3.5||W/(m 2 . K/m)|
|Resistivity (RT) – AB||0.2 * 10-3||ohm/inch||0.5 * 10-3||ohm/cm|
|Resistivity (1650C) – AB||0.1 * 10-3||ohm/inch||0.3 * 10-3||ohm/cm|
|Resistivity (RT) – C||0.2||ohm/inch||0.5||ohm/cm|
|Resistivity (1650C) – C||0.1||ohm/inch||0.3||ohm/cm|
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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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