PAM XIAMEN offers BeO Ceramic Substrate.
Beryllium Oxide (BeO), commonly referred to as beryllia, possesses a unique combination of thermal, dielectric, and mechanical properties which are highly desirable in electronic applications. No other material exhibits these characteristics. BeO ceramic conducts heat better than most metals, exhibits extremely low dielectric loss characteristics, possesses high electrical resistivity, and offers excellent strength properties. It provides all the desirable physical and dielectric characteristics exhibited by aluminum oxide and, in addition, offers higher thermal conductivity and lower dielectric constant.
BeO Ceramic Substrate 2″x 2″x0.019″, fine ground
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.