

PAM XIAMEN offers 4″CZ Prime Silicon Wafer. 4″ Si substrate wafer Growth Method: CZ 100 +/- 0.5 mm diameter silicon Orientation <111> 4deg off P Type Boron doped 0.002 – 0.003 ohm cm Front side polished – Epi ready thickness 525 +/-25 um Back [...]
PAM XIAMEN offers Ce:Lu2SiO5 substrate. Ce:Lu2SiO5 substrate (001 ) 10x10x0.5 mm, 1sp Substrate Specifications Crystal: Ce: Lu2SiO5 Ce dopant 0.175 mol % Size: 10x10x0.5 mm Orientation: (001 ) +/-0.5 0 Polish: One side optical polished. Ce:Lu2SiO5 substrate (001) 10x10x0.5 mm, 2sp [...]
PAM-01A1 series detectors are charged particles detector based on planar CZT crystal in a super small size. They have a high energy resolution in vacuum environment. PAM-01A1 integrated custxomized CZT crystal and low noise charge sensitive preamplifier circuit. It can convert α-ray into exponential decay [...]
PAM XIAMEN offers Diced Silicon Wafers.Wafer thickness could be customized. PAM XIAMEN and our partners provide researchers with creative silicon wafer and other substrate dicing solutions. Using precision diamond saws we can cut a variety of hard brittle materials. Our Services Include. Small quantity wafer dicing at [...]
PAM XIAMEN offers LaAlO3 single crystal. LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well [...]
The use of an InP epitaxial layer grown at low temperatures before the growth of a step-graded InAsP metamorphic buffer has been shown to provide a large improvement in the crystal quality of the final metamorphic layer. The improvement is evidenced by over an [...]