Charge Sensitive Pre-amplifier Chip

PAM-01C is a low noise and high gain charge sensitive preamplifier. It can be used as a key part for semiconductor detector, such as CZT and Si, and other detecting signal readout.

Charge Sensitive Pre-amplifier Chip

1. Charge Sensitive Pre-amplifier Chip Specifications Comparison

Brands	(PAM-01C)	Gremat(PAM-110)
Dimensions	24×15×3mm3	22.7×21×3.4mm3
Weight	5g	2.5g
Power	<0.3W	0.66W
Powered by	±12V	±12V
Operation temperature	-20℃-+40℃	-20℃-+40℃
Equivalent noise level	ENC:180e-	ENC:260e-
Falling edge time	250-400us	150-200us
Gain	G=5mv/fc	G=3.4mv/fc
Input charge range	<2000fc	<2941fc

Operating principle

Added with bias high voltage, the CZT crystal would generate an inner electric field. An incident ray of X/γ-ray generate electron-hole pairs. Under the influence of the electric field, those pairs drifting to two poles. And then induced charges generated in relative poles. Then the low noise charge sensitive preamplifier circuit converts those charges into exponential decay pulse signal.

2. Features of Charge Sensitive Preamp Chip

High gain
Low noise
Sensitive
Changeable Interface

3. Preamplifier Chip Applications

Semiconductor signal readout
X-ray detecting

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.

2019-04-25

Related Posts

Borofloat 33 – Borosilicate Float Glass from SCHOTT

PAM XIAMEN offers Borosilicate Float Glass from SCHOTT. We have a large selection of Schott Borofloat 33 glass wafers in all sizes. We have borofloat glass as thin as 100 microns. Borofloat 33 is the sanme as Pyrex 7740 and has the same anondic [...]

2019-02-27meta-author

60+1mm FZ Si Ingot -2

PAM XIAMEN offers 60+1mm FZ Si Ingot -2 FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

2020-03-11meta-author

4″ FZ Prime Silicon Wafer

PAM XIAMEN offers 4″ FZ Prime Silicon Wafer. 4”FZ P-type orientation 111 thickness 400±15 Resistivity 15000Ωcm polished side 1 Acid etched side 2 life time 1000 SEMI STD DISLOCATION DENSITY 500 max/ cm2 TTV/TAPER 12μm max For more information, please visit our website: https://www.powerwaywafer.com, [...]

2019-06-24meta-author

Bulk GaN cost to fall 60% to $730 for 2″ substrate by 2020

Bulk GaN cost to fall 60% to $730 for 2″ substrate by 2020 Wide-bandgap semiconductor materials such as gallium nitride (GaN) offer far higher performance than traditional silicon but cost significantly more. However, by 2020 GaN costs will drop enough for it to become competitive [...]

2012-11-09meta-author

4″CZ Prime Silicon Wafer-2

PAM XIAMEN offers 4″CZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm, p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm, TTV<5µm, Bow<30µm, Warp<30µm, Both-sides-polished, SEMI Flat (one), Sealed in Empak or equivalent cassette. For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and [...]

2019-07-05meta-author

Al2O3 (Sapphire)-1

PAM XIAMEN offers high-quality Al2O3 (Sapphire). A-plane (11-20) Al2O3 – Sapphire Wafer 5x5x0.5 mm, A plane (11-20), 2 SP Al2O3 – Sapphire Wafer 5x5x0.5 mm, A plane (11-20),1 SP Al2O3 – Sapphire Wafer 10x5x0.5 mm , A plane (11-20), 1 SP Al2O3 – [...]

2019-04-16meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

sales@powerwaywafer.com tech@powerwaywafer.com

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.