Charge Sensitive Pre-amplifier Chip

PAM-01C is a low noise and high gain charge sensitive preamplifier. It can be used as a key part for semiconductor detector, such as CZT and Si, and other detecting signal readout.

Specifications Comparison

Brands	(PAM-01C)	Gremat(PAM-110)
Dimensions	24×15×3mm3	22.7×21×3.4mm3
Weight	5g	2.5g
Power	<0.3W	0.66W
Powered by	±12V	±12V
Operation temperature	-20℃-+40℃	-20℃-+40℃
Equivalent noise level	ENC:180e-	ENC:260e-
Falling edge time	250-400us	150-200us
Gain	G=5mv/fc	G=3.4mv/fc
Input charge range	<2000fc	<2941fc

Operating principle

Added with bias high voltage, the CZT crystal would generate an inner electric field. An incident ray of X/γ-ray generate electron-hole pairs. Under the influence of the electric field, those pairs drifting to two poles. And then induced charges generated in relative poles. Then the low noise charge sensitive preamplifier circuit converts those charges into exponential decay pulse signal.

Features
High gain
Low noise
Sensitive
Changeable Interface

Applications
Semiconductor signal readout
X-ray detecting

For more information, please send us email at [email protected]

2019-04-25

Related Posts

Ceramic Substrate-15

PAM XIAMEN offers Quartz Frit. 1” Diameter Porous Quartz Frits with Optional Porosity, 1 pc Specifications Diameter – mm 25 Thickness – mm 4 Porosity 15~40um or 4~15um (Please select the pore size in the optional bar) For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] [...]

2019-04-18meta-author

6″ FZ Silicon Wafer with Diameter 150mm, Both Side Etched

PAM XIAMEN offers 6″ FZ Silicon Wafer with Diameter 150mm, Both Side Etched Silicon wafers, per SEMI Prime, E/E 6″ (150.0±0.2mm)Ø×400±25µm, FZ n-type Si:P[100]±0.5°, Ro=(1-5)Ohmcm, Carbon<2E16 /cm³, Oxygen<2E16 /cm³, TTV<12µm, Bow<40µm, Warp<50µm, Bothsidesetched, One SEMI Flat (57.5mm), Sealed in Empak or equivalent cassette, MCC Lifetime>1000µs. For more information, send us email at [email protected] and [email protected]

2020-06-10meta-author

808nm laser diode wafers

808nm laser diode wafer is offered by PAM-XIAMEN on N-type GaAs substrate. According to the material used in the active area, the LD wafer is mainly divided into two kinds with aluminum and without aluminum. More details please see below: 1. Laser Diode Wafer Specs No. 1 808nm Epi Wafer [...]

2019-03-13meta-author

8 inch Indium Aluminium Nitride (InAlN) High Electron Mobility Transistor (HEMT) on Silicon

PAM-XIAMEN can offer InAlN HEMT( Indium Aluminium Nitride High Electron Mobility Transistor) structure on 8-inch silicon. InAlN band gap is a direct band gap, and InAlN HEMT is used in producing electronic and photonic devices. It is one of the III-V group of semiconductors. As an alloy of indium nitride [...]

2021-04-16meta-author

UV LED Epi Wafer

PAM-XIAMEN can offer UV LED epi wafer, which is grown by our MOCVD range from 275nm to 405nm. Ultraviolet electromagnetic radiation, commonly known as UV, is used in many industries and applications. The emerging UV LED will be a competitive technology that can drive new innovative applications. UV-LED has [...]

2018-08-15meta-author

Borofloat 33 – Borosilicate Float Glass from SCHOTT

PAM XIAMEN offers Borosilicate Float Glass from SCHOTT. We have a large selection of Borofloat 33 glass wafers in all sizes. We have borofloat as thin as 100 microns. Borofloat 33 is the sanme as Pyrex 7740 and have the same anondic bonding properties. [...]

2019-02-27meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.