GT Advanced Technologies Enters Development and Licensing Agreement with Soitec
February 25, 2013…GT Advanced Technologies of Nashua, New Hampshire, and Soitec of Bernin, France announced a development and licensing agreement. The agreement will allowing GT to develop, manufacture and commercialize a high-volume, multi-wafer HVPE system [...]
2013-02-28meta-author
PAM XIAMEN offers 4″ Monocrystalline Silicon Wafer with Thermal oxide 20nm
4inch diameter wafer made of monocrystalline silicon with isolation oxide
Diameter 101.6mm
Polishing: one-sided for microelectronics
Type of conductivity and alloying: not specified
Surface orientation: not specified
Primary and secondary flat orientation: not specified
Thickness: 675 microns±20 microns
Wedge (TTV): less than 15 microns
TTV<15μm
Distortion: less than 35 microns
Thickness of the isolation oxide: at least 20 nm
Front side: polished.
Back side: lapped-etched
For more information, send us email at [email protected] and [email protected]
2021-03-17meta-author
PAM XIAMEN offers Undoped Silicon Wafers.
Please send us email at [email protected] if you need other specs and quantity.
Item
Dia
Dopant
Ori
Res (Ohm-cm)
Thick (um)
Polish
Grade
Description
PAM3189
25.4mm
Undoped
<111>
>2000
280um
SSP
Test
Intrinsic FZ
PAM3190
25.4mm
Undoped
<100>
>5000
73.5um
DSP
Prime
FZ, Float Zone
PAM3191
50.8mm
Undoped
<100>
>10000
280um
DSP
Prime
FZ, Intrinsic item
PAM3192
50.8mm
Undoped
<100>
>10000
500um
SSP
Test
Float Zone, Undoped
PAM3193
76.2mm
Undoped
<100>
>5000 Ohm-cm
350um
DSP
MECH
NON-REFUNDABLE, POOR QUALITY. Sold “As-Is”; wafers are covered in streaks, residue, and particles.
PAM3194
100mm
Undoped
<100>
>20,000
500um
SSP
Prime
Intrinsic, Secondary flat SEMI, TTV<10 [...]
2019-02-14meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
3″
5000
P/E
1-30
Prime, NO Flats, Individual cst
p-type Si:B
[100]
3″
300
P/P
0.5-10.0
SEMI Prime, TTV<2μm, Empak cst
p-type Si:B
[100]
3″
315
P/P
0.5-10.0
SEMI Prime, TTV<3μm
p-type Si:B
[100]
3″
3,050 ±50
C/C
>0.5
1Flat, Individual cst (can be ordered singly)
p-type Si:B
[100]
3″
250
P/E
0.15-0.20
SEMI TEST (Scratches), in sealed Empak cassettes of 3 wafers
p-type Si:B
[100]
3″
250
BROKEN
0.15-0.20
Broken wafers, in Epak cst
p-type Si:B
[100]
3″
356
P/P
0.015-0.020
SEMI
p-type Si:B
[100-4° towards[110]] ±0.5°
3″
230
P/E
0.01-0.02
SEMI Prime, TTV<5μm
p-type Si:B
[100]
3″
300
P/E
0.01-0.02
SEMI Prime
p-type [...]
2019-03-06meta-author
PAM XIAMEN offers 2″CZ Prime Silicon Wafer-4
Silicon wafer
Dia: 2”diameter
thickness: 280±25mm
Type: P-type (100)
Polished: one side polished
Resistivity1-10Ωcm
For more information, send us email at [email protected] and [email protected]
2021-03-16meta-author
Single crystal KTaNbO3 is available from PAM-XIAMEN. Potassium tantalum niobate (KTa1-xNbxO3; KTN for short) crystal is a kind of multifunctional crystal material with high electro-optical coefficient, good piezoelectric and pyroelectric effects. It has significant electro-optical and photorefractive effects. The KTaNbO3 crystal is generally grown [...]
2019-05-07meta-author