Chloride-based SiC growth on a-axis 4H-SiC substrates

Chloride-based SiC growth on a-axis 4H-SiC substrates

SiC has, during the last few years, become increasingly important as a power-device material for high voltage applications. The thick, low-doped voltage-supporting epitaxial layer is normally grown by CVD on 4° off-cut 4H-SiC substrates at a growth rate of View the MathML source

using silane (SiH4) and propane (C3H8) or ethylene (C2H4) as precursors. The concentrations of epitaxial defects and dislocations depend to a large extent on the underlying substrate but can also be influenced by the actual epitaxial growth process. Here we will present a study on the properties of the epitaxial layers grown by a Cl-based technique on an a-axis (90° off-cut from c-direction) 4H-SiC substrate.

4H-SiC; a-face; DLTS; Photoluminescence; Raman; Epitaxy

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