Chromium Photomask Blank

Chromium Photomask Blank

Photomask blank with antireflective chromium is available. Photomasks are mainly used in integrated circuits, flat panel displays (including LCD, LED, OLED), printed circuit boards and other fields. The photomask is a pattern master used in the photolithography process in microelectronics manufacturing. Here are specifications of photo mask blank for your reference:

Chromium Photomask Blank

No. 1 Photo Masks PAM190302-MASKH

No. 1-1 Silicon wafers with IC structures (ASIC11) at 0.35 micron design standards;                                                 

No.1-2 Silicon wafers with IC structures (ASIC12) at 0.35 micron design standards;

Note:

The diameter of the substrate >= 150mm. the type / doping admixture, orientation, thickness, resistivity, front surface, rear surface, flat (s) is determined by the manufacturer to provide the required element base parameters (transistors, resistors, capacitors) specified in the Design Kit. The manufacturer provides a Design Kit suitable for IC topology development. The customer performs the development in accordance with the Design Kit and transmits the information to the manufacturer in GDS format. The manufacturer produces a set of photomasks in accordance with the information in the GDS format. The manufacturer manufactures the plates using a set of photomasks and according to the Design Kit requirement.

No. 1-3 Photomask Blank

size 152 x 152 x mm, scale 5: 1, designed for photolithography with design standards of 0.35 μm;

Basic Template Requirements

Purpose: binary templates for projection f / l                                               

Substrate size: 6 “x6” x0.25 “, quartz                                                   

Equipment type: 5x, NIKON NSR 2205i11D                                                   

Exposure field: 110 mm x 110 mm                                                

Pellicle: Yes, NIK49P-122-1K17 / HFLC, one-side protection from chrome (two-way protection on demand)                                                      

Minimum critical size: 1.75 microns                                                      

Reproducibility of critical dimensions: 0.05 µm (3σ)                                                     

Registration Accuracy (Registration): 0.1 µm                                                       

Defect:  0.1 / cm2 (1 micron)

No. 2 Chromium Photomask on Quartz PAM200313-MASKH                            

No. 2-1 Least complex one: Strip & Ship;                                    

CD >= 5um; 

Vast open areas; Write Grid: Standard           

Material: quartz, antireflective chromium. No pellicle.    

No. 2-2 Moderate one:                               

5x reticle; 6”x6”x0.12” Quartz;                                  

No defects bigger than 2,5um;                                   

Smaller than 1,25um defect                               

CD >= 5um; lines/spaces/octagons;                                   

Write Grid: Should maintain CD      

Material: quartz, antireflective chromium. No pellicle.                                                      

No. 2-3 Most complex one:                       

5x reticle; 6”x6”x0.12” Quartz;                                  

No defects bigger than 1,25um;                                 

Smaller than 0,625um defect                             

CD >= 2,5um; lines/spaces/ octagons;                              

Write Grid: Should maintain CD                                  

Material: quartz, antireflective chromium. No pellicle.

There won’t be any pellicle necessary in these photomask blanks, and the reticle mask size will be 6” x 6” and 0.12” in thickness. Min feature sizes on masks are 2,5um and 5um. Photomask (reticle) is for fabrication of the lithography process to be used in stepper machines.

The technical parameters of photomask blank meet the requirement in Table 1 and Table 2.

Table 1 Photo Mask Quality Level Parameters

Grade D C B A S T U V W W+P X X+P Y Y+P Z Z+P
Tolerance ±0.3 ±0.3 ±0.2 ±0.15 ±0.1 ±0.1 ±0.05 ±0.04 ±0.035 ±0.035 ±0.032 ±0.032 ±0.028 ±0.028 ±0.022 ±0.022
Mean to target ±0.3 ±0.3 ±0.2 ±0.15 ±0.1 ±0.075 ±0.05 ±0.04 ±0.03 ±0.03 ±0.028 ±0.028 ±0.025 ±0.025 ±0.02 ±0.02
Uniformity 0.2 0.2 0.2 0.15 0.1 0.075 0.05 0.04 0.035 0.035 0.035 0.035 0.03 0.03 0.025 0.025
Registration ±0.4 ±0.3 ±0.2 ±0.15 ±0.1 ±0.075 ±0.05 ±0.06 ±0.055 ±0.055 ±0.05 ±0.05 ±0.045 ±0.045 ±0.04 ±0.04
Defect size 1.5 1.5 1 0.8 0.6 0.4 0.4 0.35 0.3 0.3 0.25 0.25 0.2 0.2 0.2 0.2
Defect density 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
Edge defect / / / / / / / 0.3 0.3 0.3 0.25 0.25 0.2 0.2 0.2 0.2
Edge roughness / / / / / / / 0.3 0.3 0.3 0.25 0.25 0.2 0.2 0.2 0.2
Corner rounding / / / / / / / 0.3 0.3 0.3 0.25 0.25 0.2 0.2 0.2 0.2
PSM phase / / / / / / / / / 180±4 / 180±3 / 180±3 / 180±3
PSM trans / / / / / / / / / 6±0.4 / 6±0.3 / 6±0.3 / 6±0.3

 

Note:

The parameters are applicable to scale reticle; the quality level is ranked from low to high:

  • 0.5um process supports up to S level; 0.35um process supports up to U level, 0.18um process supports up to X level;
  • Ordinary glass mask is only applicable to Class D.
Table 2 Requirements for Photomask Quality
  1:1 Main Mask 1:1 Electron Beam Scanning UT mask
Grade PB PA EB EA ES uc UB UA
CD spec >2.5 1.2~2.5 >1.5 1.2~1.5 <1.2 >2 1.5~2.0 <1.5
Tolerance ±0.25 ±0.2 ±0.2 ±0.15 ±0.1 ±0.25 ±0.2 ±0.15
Uniformity 0.3 0.3 0.3 0.25 0.2 0.25 0.2 0.15
Registration ±0.8 ±0.8 ±0.2 ±0.15 ±0.1 ±0.2 ±0.15 ±0.1
Defect size 2 2 1.5 1.5 1.0 2 1.5 1
Defect density(pcs/in2) 2 1 2 1 0.5 0 0 0

 

Note:

The requirement is applicable to 1:1 mask, and the quality level is ranked from low to high;

UT mask is only applicable to quartz material; ordinary glass mask is applicable to the highest level B.

No.3 Photolithography Blank PAM200326-MASKH

Glass substrate:     

Size: 50x50mm +/-0.2mm;      

Thickness: 3.67mm +/-0.02mm      

Material: QUARTZ  

No Spec. on Flatness: 1/4 ~ 1/2 wavelength  

Free of chip on edges      

Starting substrate 7X7inch X 150mil       

Standard reticle blank Coating 3.0 OD AR Chrome

No. 4 Photo Mask on Quartz PAM200602-MASKH

No. 4-1 Photo mask                  

Mask size   5” X5”                     

MASK SUBSTRATE MATERIALS: Quartz                     

Lithography: electron beam

Mask polarity:   BF           

Feature tolerance: 0.02um                       

Feature size: 0.4um                           

Accuracy:   0.12 um                  

Manufacturing Grid: 0.005um, 0.02um                                           

No. 4-2 Photomask Blank

Mask size   5” X5”                     

MASK SUBSTRATE MATERIALS Quartz                      

Lithography: laser                     

Mask polarity: DF                      

Feature tolerance: 0.5um                          

Feature size: 10 um, 3um, or 5um          

Accuracy: 0.12 um                    

Manufacturing Grid: 0.02um                                                

No. 5 Quartz with LR Chrome PAM200811-MASKH

Mask size= 5″x 5″x 0.09″                 

Material = Quartz with LR Chrome         

Orientation: RR Down.            

Data Dark .             

Critical Dimension (CD): 4 µm +/- 0.5 µm  (for all masks)                

Defects: 0 > 5 µm            

Please note: 

The Quartz with LR Chrome is for fabricating Mask Aligner (NUV Photo lithography 350-450 nm wavelength);

Data to mask scaling is 1:01 because mask aligner have scaling 1:1, instead of 5:1;   

Mask material is Quartz with LR Chrome, and Chrome side is facing down (Real Read (RR) down); 

In layout designing, Metal layer number 28 is used, and the area of metal layer in the design layouts should be chrome on the photo mask.       

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For more information, please contact us email at [email protected] and [email protected].                                                                       

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