InP wafer

InAs wafer InAs wafer
InP wafer
InP wafer
InP wafer
InP wafer

InP wafer

PAM-XIAMEN offers Compound Semiconductor InP wafer – Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

Category: Tags: , , ,
  • Description

Product Description

PAM-XIAMEN offers Compound Semiconductor InP wafer – Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic (“zinc blende”) crystal structure, identical to that of GaAs and most of the III-V semiconductors.Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide[clarification needed] at 400 °C.,[5] also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphide. InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

Here is the detail specification:
2″(50.8mm)InP Wafer Specification
3″(76.2mm)Inp Wafer Specification
4″(100mm) InP Wafer Specificatio
2″ InP Wafer Specification
Item Specifications
Dopant N-type N-type P-type SI-type
Conduction Type Undoped Sulphur Zinc lron
Wafer Diameter 2″
Wafer Orientation (100)±0.5°
Wafer Thickness 350±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration 3×1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N/A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70×103cm2/V.s >1000cm2/V.s
Resistivity N/A N/A N/A N/A
EPD <1000cm-2 <500cm-2 <1×103cm-2 <5×103cm-2
TTV <10um
BOW <10um
WARP <12um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

 


3″ InP Wafer Specification 

 

Item Specifications
Dopant N-type N-type P-type SI-type
Conduction Type Undoped Sulphur Zinc lron
Wafer Diameter 3″
Wafer Orientation (100)±0.5°
Wafer Thickness 600±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration ≤3×1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N/A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70×103cm2/V.s >1000cm2/V.s
Resistivity N/A N/A N/A N/A
EPD <1000cm-2 <500cm-2 <1×103cm-2 <5×103cm-2
TTV <12um
BOW <12um
WARP <15um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

 

 4″ InP Wafer Specification 
Item Specifications
Dopant N-type N-type P-type SI-type
Conduction Type Undoped Sulphur Zinc lron
Wafer Diameter 4″
Wafer Orientation (100)±0.5°
Wafer Thickness 600±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration ≤3×1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N/A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70×103cm2/V.s >1000cm2/V.s
Resistivity N/A N/A N/A N/A
EPD <1000cm-2 <500cm-2 <1×103cm-2 <5×103cm-2
TTV <15um
BOW <15um
WARP <15um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

You may also like…

  • GaSb WaferGaSb Wafer
    Read More
    Quick View

    GaSb Wafer

    PAM-XIAMEN offers Compound Semiconductor GaSb wafer – gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100)

  • GaP Wafer
    Read More
    Quick View

    GaP Wafer
    PAM-XIAMEN offers Compound Semiconductor GaP wafer – gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
  • GaAs (Gallium Arsenide) Wafers
    Read More
    Quick View

    GaAs (Gallium Arsenide) Wafers

    PAM-XIAMEN Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and (GaAs)Gallium Arsenide wafer processing technology.

  • SiC Epitaxy
    Read More
    Quick View

    SiC Epitaxy
    We provide custom thin film (silicon carbide)SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect
  • Ge(Germanium) Single Crystals and Wafers
    Read More
    Quick View

    Ge(Germanium) Single Crystals and Wafers
    PAM-XIAMEN offers semiconductor materials,single crystal (Ge)Germanium Wafer grown by VGF / LEC
  • Freestanding GaN substrate
    Read More
    Quick View

    Freestanding GaN substrate

    PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

  • InSb waferInSb wafer
    Read More
    Quick View

    InSb wafer

    PAM-XIAMEN offers Compound Semiconductor InSb wafer – Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

  • InAs waferInAs wafer
    Read More
    Quick View

    InAs wafer

    PAM-XIAMEN offers Compound Semiconductor InAs wafer – Indium arsenide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).