InP wafer

PAM-XIAMEN offers VGF InP(Indium Phosphide) wafer with prime or test grade including undoped, N type or semi-insulating. The mobility of InP wafer is different in different type, undoped one>=3000cm2/V.s, N type>1000 or 2000cm2V.s(depends on different doping concentration), P type: 60+/-10 or 80+/-10cm2/V.s(depends on different Zn doping concentration), and semi-insulting one>2000cm2/V.s, the EPD of Indium Phosphide is below 500/cm2 normally.

  • Description

Product Description

InP wafer

PAM-XIAMEN offers Compound Semiconductor InP wafer – Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).And the dopants can be Sulphur,Sn(Tin), Zinc or customs. the Laser Mark as specified on backside of InP wafer along with primary flat. The orientation with slight deflection angle is available, such as (100)0.075°towards[110]]±0.025°

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic (“zinc blende”) crystal structure, identical to that of GaAs and most of the III-V semiconductors.Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide[clarification needed] at 400 °C.,[5] also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphide. InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

Here is the detail specification:
2″(50.8mm)InP Wafer Specification
3″(76.2mm)Inp Wafer Specification
4″(100mm) InP Wafer Specificatio
 
2″ InP Wafer Specification
ItemSpecifications
DopantN-typeN-typeP-typeSI-type
Conduction TypeUndopedSulphurZinclron
Wafer Diameter2″
Wafer Orientation(100)±0.5°
Wafer Thickness600±25um
Primary Flat Length16±2mm
Secondary Flat Length8±1mm
Carrier Concentration3×1016cm-3(0.8-6)x1018cm-3(0.6-6)x1018cm-3N/A
Mobility(3.5-4)x103cm2/V.s(1.5-3.5)x103cm2/V.s50-70×103cm2/V.s>1000cm2/V.s
ResistivityN/AN/AN/AN/A
EPD<1000cm-2<500cm-2<1×103cm-2<5×103cm-2
TTV<10um
BOW<10um
WARP<12um
Laser markingupon request
Suface finishP/E, P/P
Epi readyyes
PackageSingle wafer container or cassette

 

3″ InP Wafer Specification 

ItemSpecifications
DopantN-typeN-typeP-typeSI-type
Conduction TypeUndopedSulphurZinclron
Wafer Diameter3″
Wafer Orientation(100)±0.5°
Wafer Thickness600±25um
Primary Flat Length16±2mm
Secondary Flat Length8±1mm
Carrier Concentration≤3×1016cm-3(0.8-6)x1018cm-3(0.6-6)x1018cm-3N/A
Mobility(3.5-4)x103cm2/V.s(1.5-3.5)x103cm2/V.s50-70×103cm2/V.s>1000cm2/V.s
ResistivityN/AN/AN/AN/A
EPD<1000cm-2<500cm-2<1×103cm-2<5×103cm-2
TTV<12um
BOW<12um
WARP<15um
Laser markingupon request
Suface finishP/E, P/P
Epi readyyes
PackageSingle wafer container or cassette

 

 4″ InP Wafer Specification 

ItemSpecifications
DopantN-typeN-typeP-typeSI-type
Conduction TypeUndopedSulphurZinclron
Wafer Diameter4″
Wafer Orientation(100)±0.5°
Wafer Thickness600±25um
Primary Flat Length16±2mm
Secondary Flat Length8±1mm
Carrier Concentration≤3×1016cm-3(0.8-6)x1018cm-3(0.6-6)x1018cm-3N/A
Mobility(3.5-4)x103cm2/V.s(1.5-3.5)x103cm2/V.s50-70×103cm2/V.s>1000cm2/V.s
ResistivityN/AN/AN/AN/A
EPD<1000cm-2<500cm-2<1×103cm-2<5×103cm-2
TTV<15um
BOW<15um
WARP<15um
Laser markingupon request
Suface finishP/E, P/P
Epi readyyes
PackageSingle wafer container or cassette

PL(Photoluminescence) Test of InP Wafer

We measure InP wafers by Peak Lambda, Peak int, and FWHM, the spectra mapping is as follows:

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

The the typical values is see below data:

Peak Lambda(nm)Peak IntFWHM(nm)
1279.47.79948.5
1279.85.23644.6

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