InP(Indium Phosphide) wafer with prime or test grade including undoped, N type or semi-insulating

InP wafer

PAM-XIAMEN offers VGF InP(Indium Phosphide) wafer with prime or test grade including undoped, N type or semi-insulating. The mobility of InP wafer is different in different type, undoped one>=3000cm2/V.s, N type>1000 or 2000cm2V.s(depends on different doping concentration), P type: 60+/-10 or 80+/-10cm2/V.s(depends on different Zn doping concentration), and semi-insulting one>2000cm2/V.s, the EPD of Indium Phosphide is below 500/cm2 normally.

Description

Product Description

InP wafer

PAM-XIAMEN offers Compound Semiconductor InP wafer – Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).And the dopants can be Sulphur,Sn(Tin), Zinc or customs. the Laser Mark as specified on backside of InP wafer along with primary flat. The orientation with slight deflection angle is available, such as (100)0.075°towards[110]]±0.025°

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic (“zinc blende”) crystal structure, identical to that of GaAs and most of the III-V semiconductors.Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide[clarification needed] at 400 °C.,[5] also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphide. InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

Here is the detail specification:

2″(50.8mm)InP Wafer Specification

3″(76.2mm)Inp Wafer Specification

4″(100mm) InP Wafer Specificatio

2″ InP Wafer Specification

Item	Specifications
Dopant	N-type	N-type	P-type	SI-type
Conduction Type	Undoped	Sulphur	Zinc	lron
Wafer Diameter	2″
Wafer Orientation	(100)±0.5°
Wafer Thickness	600±25um
Primary Flat Length	16±2mm
Secondary Flat Length	8±1mm
Carrier Concentration	3×1016cm-3	(0.8-6)x1018cm-3	(0.6-6)x1018cm-3	N/A
Mobility	(3.5-4)x103cm2/V.s	(1.5-3.5)x103cm2/V.s	50-70×103cm2/V.s	>1000cm2/V.s
Resistivity	N/A	N/A	N/A	N/A
EPD	<1000cm-2	<500cm-2	<1×103cm-2	<5×103cm-2
TTV	<10um
BOW	<10um
WARP	<12um
Laser marking	upon request
Suface finish	P/E, P/P
Epi ready	yes
Package	Single wafer container or cassette

3″ InP Wafer Specification

Item	Specifications
Dopant	N-type	N-type	P-type	SI-type
Conduction Type	Undoped	Sulphur	Zinc	lron
Wafer Diameter	3″
Wafer Orientation	(100)±0.5°
Wafer Thickness	600±25um
Primary Flat Length	16±2mm
Secondary Flat Length	8±1mm
Carrier Concentration	≤3×1016cm-3	(0.8-6)x1018cm-3	(0.6-6)x1018cm-3	N/A
Mobility	(3.5-4)x103cm2/V.s	(1.5-3.5)x103cm2/V.s	50-70×103cm2/V.s	>1000cm2/V.s
Resistivity	N/A	N/A	N/A	N/A
EPD	<1000cm-2	<500cm-2	<1×103cm-2	<5×103cm-2
TTV	<12um
BOW	<12um
WARP	<15um
Laser marking	upon request
Suface finish	P/E, P/P
Epi ready	yes
Package	Single wafer container or cassette

4″ InP Wafer Specification

Item	Specifications
Dopant	N-type	N-type	P-type	SI-type
Conduction Type	Undoped	Sulphur	Zinc	lron
Wafer Diameter	4″
Wafer Orientation	(100)±0.5°
Wafer Thickness	600±25um
Primary Flat Length	16±2mm
Secondary Flat Length	8±1mm
Carrier Concentration	≤3×1016cm-3	(0.8-6)x1018cm-3	(0.6-6)x1018cm-3	N/A
Mobility	(3.5-4)x103cm2/V.s	(1.5-3.5)x103cm2/V.s	50-70×103cm2/V.s	>1000cm2/V.s
Resistivity	N/A	N/A	N/A	N/A
EPD	<1000cm-2	<500cm-2	<1×103cm-2	<5×103cm-2
TTV	<15um
BOW	<15um
WARP	<15um
Laser marking	upon request
Suface finish	P/E, P/P
Epi ready	yes
Package	Single wafer container or cassette