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Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate
Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate Highlights • The growth of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate. • The investigation of the effect of HT-AlN thickness on crystalline quality and stress of GaN on SiC. • The semi-insulating characteristic of GaN layer analyzed by PL [...]
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monitor wafer, sic wafer s, sic wafer sic semiconductor device
2″ Silicon Wafer-9
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [110] 2″ 250 P/E FZ ~50 PF<111> SF 134° n-type Si:P [110] 2″ 900 P/E FZ 50-100 1 F @ <111> only n-type Si:P [110] 2″ 280 P/P FZ 16-30 1 F @ <111> only n-type Si:P [110] 2″ 1000 P/P FZ 15-18 1 F @ <1,-1,0> n-type Si:P [100] 2″ 300 P/P FZ 1,000-1,600 SEMI Prime n-type Si:P [100] 2″ 300 P/P FZ 600-1,200 SEMI Prime, n-type Si:P [100] 2″ 2000 P/E FZ >600 SEMI Prime, , Individual cst n-type Si:P [100] 2″ 200 P/P FZ 500-1,500 SEMI Prime, n-type Si:P [100] 2″ 300 P/E FZ >300 SEMI Prime, n-type Si:P [100] 2″ 500 P/P FZ >200 SEMI Prime, n-type Si:P [100] 2″ 300 P/P FZ 50-110 SEMI Prime, n-type Si:P [100] 2″ 280 P/P FZ 20-70 SEMI Prime, n-type Si:P [100] 2″ 300 P/E FZ 10-40 SEMI Prime n-type [...]
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(10-11) Plane U-GaN Freestanding GaN Substrate
(10-11) Plane U-GaN Freestanding GaN Substrate PAM-XIAMEN offers (10-11) Plane U-GaN Freestanding GaN Substrate Item PAM-FS-GAN(10-11)-U Dimension 5 x 10 mm2 Thickness 380+/-50um Orientation (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
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The Gallium Nitride Era is Coming
The Gallium Nitride Era is Coming Because of the smaller form factor, better thermal performance, and higher efficiency of gallium nitride (GaN) devices, the industry has been looking forward to it for a long time. In recent years, as GaN-on-SiC devices have begun to be [...]
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GaN on Sapphire for RF
PAM XIAMEN offers GaN on Sapphire for RF. 1.1 GaN HEMT Structure on Sapphire for RF Application Wafer size 2”, 3”, 4”, 6” AlGaN/GaN HEMT structure Refer 1.2 Carrier density 6E12~2E13 cm2 Hall mobility / XRD(102)FWHM / XRD(002)FWHM / Sheet Resistivity / AFM RMS (nm）of 5x5um2 <0.25nm Bow(um) <=35um Edge exclusion <2mm siN passivation layer 0~30nm u-GaN cap layer / Al composition 20-30% In composition 17% for InAlN AlGaN barrier layer 20~30nm AlN [...]
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3″ Silicon Wafer-3
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