PAM XIAMEN offers 2″CZ Prime Silicon Wafer
tem1, 100pcs
Silicon wafer:
i. Diameter: 50.8 mm ± 0.5 mm,
ii. Thickness: 275 μm ±25μm,
iii. Doping: P type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: [...]
2020-03-25meta-author
PAM XIAMEN offers 6″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
6″
350
P/P
FZ 2,700-3,250
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[100]
6″
900
C/C
FZ >50
SEMI Prime, 1Flat, MCC Lifetime>6,000μs
n-type Si:P
[100]
6″
825
C/C
FZ 7,000-8,000 {7,025-7,856}
SEMI, 1Flat, Lifetime=7,562μs
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
675
P/P
FZ >3,500
SEMI Prime, 1Flat (57.5mm)
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
790 ±10
C/C
FZ >3,500
SEMI, 1Flat
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
675
P/P
FZ >1,000
SEMI Prime, Notch on <010> {not on <011>}, Laser Mark
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
675
BROKEN
FZ >1,000
SEMI notch Test, Broken into many large pieces. One piece [...]
2019-03-04meta-author
PAM XIAMEN offers high-quality Al2O3 (Sapphire).
A-plane (11-20)
Al2O3 – Sapphire Wafer 5x5x0.5 mm, A plane (11-20), 2 SP
Al2O3 – Sapphire Wafer 5x5x0.5 mm, A plane (11-20),1 SP
Al2O3 – Sapphire Wafer 10x5x0.5 mm , A plane (11-20), 1 SP
Al2O3 – [...]
2019-04-16meta-author
The paper describes experimental results on low temperature plasma-assisted molecular beam epitaxy of GaN/AlN heterostructures on both 6H-SiC and Si(111) substrates. We demonstrate that application of migration enhanced epitaxy and metal-modulated epitaxy for growth of AlN nucleation and buffer layers lowers the screw and [...]
2019-11-05meta-author
Graphene and carbon nanotube (CNT) structures have promise for many electronic device applications and both have been grown on SiC through the decomposition of the substrate. It is well known that both graphene and aligned CNTs are grown under similar conditions with overlapping temperature [...]
2019-12-16meta-author
Osram Laboratory Reports 142 lm/W Efficiency Record for Warm White LED Light Source
March 15, 2011…Osram Opto Semiconductors reports that it has set a new laboratory record of 142 lm/W for the efficiency of a warm white LED light source. The LED with a correlated [...]
2012-03-06meta-author
