Microelectronics & Semiconductor Device/Wafer Cleaning Equipment Market in 2012 – 2017
The basic building blocks of almost all the electronic devices are components like semiconductor wafers, ICs, MEMS, memory devices (HDDs), PCBs, etc The overall performance of the electronic device depends on the performance of [...]
2013-01-14meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111]
2″
1000
P/E
0.001-0.005
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
500
P/P
<0.01
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
500
P/P
<0.01 {0.00087-0.00100}
SEMI Prime
p-type Si:Ga
Poly.
2″
C/C
0.024-0.036
Gallium doped Concentrate (each with measured Gallium content)
n-type Si:P
[110]
2″
280
P/E
19-33
SEMI Prime, 1 Flat @ [1,-1,0], in hard cst
n-type Si:P
[110]
2″
280
P/E
19-33
SEMI Prime,
n-type Si:P
[110] ±0.5°
2″
300
P/E
1-5
SEMI Prime, , TTV<5μm
n-type Si:Sb
[110]
2″
375
P/E
0.005-0.020
SEMI
n-type Si:Sb
[110]
2″
375
P/E
0.005-0.020
SEMI
n-type Si:P
[100]
2″
400
P/P
210-880
SEMI Prime,
n-type Si:P
[100]
50mm
280
P/E
130-280
SEMI Prime,
n-type Si:P
[100]
2″
300
P/P
33-48
SEMI TEST [...]
2019-03-07meta-author
Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocation
Highlights
•High-quality InSb was grown on GaAs by MBE using a “buffer-free” method.
•The strain energy is relieved by interfacial misfit dislocations observed by TEM.
•The type and separation of dislocations are [...]
A phenomenon of LT-GaAs photoconductive switch triggered by 800nm femtosecond laser
The Ti oxide is used as insulator between the electrodes to substitute the air gap of photoconductive semiconductive switch (PCSS). The width of the oxide is smaller than 100nm, the electrodes and substrate’s materials [...]
Cadmium zinc telluride (CdZnTe) is now established as a popular choice of sensor for the detection of γ-rays and hard x-rays, leading to its adoption in security, medical and scientific applications. There are still many technical challenges involving the deposition of high-quality, uniform metal contacts [...]
2019-11-26meta-author
GaAs HEMT epi wafer
We can offer 4″GaAs HEMT epi wafer, please see below typical structure:
Structure1: 4″AlGaAs/GaAs HEMT epi wafer( PAM200416-HEMT):
HEMT structure
Thickness
GaAs cap layer
100A
AlGaAs, x=0.28,barrier layer, Si doped 7E17
500A
AlGaAs, x=0.28,spacer layer
150A
GaAs
0.5um
AlxGaAs/GaAs, x=0.28, SL
30A/30A, 10 period
GaAs buffer
2000A
GaAs substrate
—
Remark:
300K，Mobility :> 5000cm2/V.s, Ns>4.0E11
77K, Mobility: > 150,000-190,000 cm2/V.s,Ns>4.0E11
Structure [...]
