PAM XIAMEN offers InP Wafer.
InP(100)
InP (100) Sn-doped
InP-(VGF- Grown) (100) Sn doped, 2″x0.35mm wafer, 1sp
InP (100)undoped
InP (100) undoped, 10×10 x 0.5 mm wafer, 1sp
VGF InP (100) undoped, 2″ x 0.35 mm wafer, 1sp
VGF InP (100) undoped, 2″ x [...]
2019-05-06meta-author
CZT Probe-2
PAM-01A series are planar CZT crystal based detector which is super small. With high sensitive CZT crystal and low noise charge sensitive amplifier built in, they can detect energy spectrum of X-ray and low energy γ-ray in a high resolution.
Cooperated with ordered [...]
2019-04-24meta-author
PAM XIAMEN offers 4″ FZ Silicon Ingot with Diameter 100.7±0.3mm
Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-05-27meta-author
PAM XIAMEN offers 4″FZ Silicon Ignot.
Silicon ingot, per SEMI, G 4″Ø (Diameter 100.5±0.3mm),
FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm,
Ground Ingot, NO Flats. Lifetime>1,000us,
Ox/Carbon <1E16/cc.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com [...]
2019-07-04meta-author
A new solution technique to grow SiC nanowires/nanorods was developed by simply heating Fe–Si melt on a graphite plate in argon atmosphere to 1600 °C for 3 and 6 h. SiC nanowires/nanorods with diameters of 100 nm and lengths of several tens of micrometres were [...]
2019-11-15meta-author
PAM XIAMEN offers SOS( Silicon on Sapphire).
Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick,
Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.6 um thick,
Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 1.0 [...]
2019-05-16meta-author
