PAM XIAMEN offers 6″ FZ Silicon Wafer with Diameter 150mm, Both Side Etched
Silicon wafers, per SEMI Prime, E/E
6″ (150.0±0.2mm)Ø×400±25µm,
FZ n-type Si:P[100]±0.5°,
Ro=(1-5)Ohmcm,
Carbon<2E16 /cm³, Oxygen<2E16 /cm³,
TTV<12µm, Bow<40µm, Warp<50µm,
Bothsidesetched, One SEMI Flat (57.5mm),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at [email protected] and [email protected]
2020-06-10meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
4
DSP
Boron
P
100
32,5 ± 2,5
110 ± 1
0.0 ± 1.0°
1 – 100 Ohmcm
100 ± 0.3 mm
302 ± 4 µm
35
4
35
4
DSP
Boron
P
100
32,5 ± 2,5
110 ± 0,50
90 ± 5.0 °, [...]
2019-02-25meta-author
PAM XIAMEN offers PbTe single crystal substrate.(Not sell it temporarily)
Lead telluride (Phoebe) is a compound of lead and tellurium (PbTe); it is a narrow gap semiconductor. It occurs naturally as the mineral altaite.
It is often alloyed with tin to make lead tin telluride, [...]
2019-05-14meta-author
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).
PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.
6″ Diameter Wafers [...]
2019-05-15meta-author
PAM XIAMEN offers high-quality AlN Single Crystal Substrate& Template.
AlN Single Crystal Substrate(PAM210702-ALN)
Diameter
10 mm
Thickness
400 ± 50 µm
Crystal type
2H
Orientation
{0001}± 0.5°
Surface Finish Al face
CMP(double side polishing is customizable)
Roughness
Al face
≤0.5 nm
N face (backside)
≤1.2 µm
Shape
Round
Scratches
None
Cumulative Length
≤1.0 mm
Usable Area
≥90%
TTV
≤ 30 µm
Bow
≤ 30 µm
Wrap
≤ 30 µm
Cracks
None, by naked eye, high intensity light
Surface Contamination
None, by naked eye, diffuse light
Packaging
Single wafer cups
0.04” Thick [...]
2019-04-16meta-author
Abstract
The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots (SQDs) to raise the growth repeatability. Here, through many growth tests on rotating substrates, we develop a proper In deposition amount (θ) for SQD growth, according to the measured critical θ for [...]
2017-06-14meta-author
