We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:
Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions [...]
2019-12-02meta-author
Numerical simulation of pixellated CdZnTe detector for medical radionuclide imaging application
The recent development of CdZnTe detectors has made it possible to produce CdZnTe based clinical radionuclide imagers. We therefore investigate the pixellation geometry ideal for this application using numerical simulation. These studies indicate that, for a fixed pixel [...]
PAM XIAMEN offers Single-emitter LD Chip 808nm @8W.
Brand: PAM-XIAMEN
Wavelength: 808nm
Stripe width: 350um
Output Power: 8W
Cavity Length:2.5mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-05-09meta-author
Silicon Ingots -2
PAM XIAMEN offers Silicon Ingots. Below is just a short list. Contac us if you need other specs!
All diameters!
Note: Material – CZ unless noted
Kg in
Properties of Silicon
Stock
Silicon Ingots
Material Description
19.35
FZ SCRAP material n-type, Ro: 1,000-10,000 Ohmcm
5.6
FZ SCRAP material Intrinsic, Ro: >10,000 Ohmcm
5.12
6″Ø ingot [...]
2019-02-15meta-author
Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy
Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, [...]
PAM XIAMEN offers LD Bare Bar for [email protected] 2mm.
Brand: PAM-XIAMEN
Wavelength: 940nm
Filling Factor: 80%
Output Power: 600W
Cavity Length:2mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
