We provide thermal oxide wafer with/without Ti layer/Pt layer in diameter from 2″ to 6″,now we give examples as follows:
1) 4 inch,silicon prime/test wafer,deposited with 5000 Angstroms of silicon oxide
2) Pt layer+Ti layer+thermal oxide layer deposit on silicon wafer:
4 inch Prime grade silicon,1-20 ohm [...]
PAM XIAMEN offers Wafers Used to Deposit Thin Film Electronic Devices . If you don’t see what you need then Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Our clients use Dry Thermal Oxide for making thin-film electronic devices.
Client:
“We are making thin-film [...]
2019-02-26meta-author
InGaAsN epitaxially on GaAs or InP wafers
PAM-XIAMEN provides InGaAsN epitaxially on GaAs or InP wafers as follows:
Layer
Doping
Thickness (um)
Remark
GaAs
undoped
~500
<001> wafer substrate
InGaAsN*
undoped
0.150
band gap <1 eV
Al(0.3)Ga(0.7)As
undoped
0.5
GaAs
undoped
2
Al(0.3)Ga(0.7)As
undoped
0.5
ITEM
x/y
Doping
carrier conc.(cm3)
Thickness（um）
wave length(um)
Lattice mismatch
InAs(y)P
0.25
none
5.0*10^16
1.0
–
In(x)GaAs
0.63
none
1.0*10^17
3.0
1.9
600<>600
InAs(y)P
0.25
S
1.0*10^18
205.0
–
InAs(y)P
0.05->0.25
S
1.0*10^18
4.0
–
InP
–
S
1.0*10^18
0.3
–
Substrate:InP
S
(1-3)*10^18
~350
–
Source:PAM-XIAMEN
For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com [...]
PAM XIAMEN offers (110) Silicon Substrates.
If you don’t see what you need then please email at sales@powerwaywafer.com.
Diam
(mm)
Material
Dopant
Orient.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
6″
p–type Si:B
[110] ±0.5°
390 ±10
C/C
>10
Prime, 2Flats, Empak cst
7″
p–type Si:B
[110] ±0.5°
500
P/E
FZ >10,000
Prime, 2Flats, Empak cst, TTV<5μm
8″
p–type Si:B
[110] ±0.5°
200
P/P
FZ 1–2
Prime, 2Flats, Empak cst
9″
p–type Si:B
[110] ±0.5°
200
P/P
FZ 1–2
SEMI Prime, 2Flats, Empak cst
10″
p–type Si:B
[110] [...]
2019-02-22meta-author
PAM XIAMEN offers GaN Template on Silicon.
Gallium nitride substrates are matched in lattice constant and thermal expansion properties for epitaxial growth of doped GaN layers needed for fabrication of GaN-based devices. This eliminates stress and defects induced by growing GaN epi-layers on non-nitride [...]
2019-04-22meta-author
Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching
In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by [...]
2013-03-29meta-author
