CZT Compton Imaging Detector

PAM-PA03 series are pixel electrode structured detectors based on CZT crystal.

Specification

Material CdZnTe
Density 5.8g/cm3
Volume resistivity >1010Ω.cm
Dimension 22.0×22.0mm2
Thickness 15.0mm
Pixel size 1.38×1.38mm2
Pixel center space 1.88mm
Pixel array 11×11
Electrode material Au
Operation temperature -20℃-+40℃
Energy range 60KeV~2.6MeV
Energy resolution(22℃) All<4%@662KeV
Storage temperture 10℃~40℃
Storage humidity 20%-80%

 

Spectrum

 

 

 

 

 

 

 

 

 

 

Features
Long-time stability
High energy resolution
High space resolution
High detection efficiency
Room temperature working

Applications
Homeland safety
Anti-terrorism
Nuclear science and technology
Portable imaging probe

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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