CZT Compton Imaging Detector

PAM-PA03 series are pixel electrode structured detectors based on CZT crystal.

Specification

Material CdZnTe
Density 5.8g/cm3
Volume resistivity >1010Ω.cm
Dimension 22.0×22.0mm2
Thickness 15.0mm
Pixel size 1.38×1.38mm2
Pixel center space 1.88mm
Pixel array 11×11
Electrode material Au
Operation temperature -20℃-+40℃
Energy range 60KeV~2.6MeV
Energy resolution(22℃) All<4%@662KeV
Storage temperture 10℃~40℃
Storage humidity 20%-80%

 

Spectrum

 

 

 

 

 

 

 

 

 

 

Features
Long-time stability
High energy resolution
High space resolution
High detection efficiency
Room temperature working

Applications
Homeland safety
Anti-terrorism
Nuclear science and technology
Portable imaging probe

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

2019-04-24

Share this post

Related Posts

AlGaInP epi wafer

AlGaInP epi wafer AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers. AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure. Specs of AlGaInP wafers on chips AlGaInP [...]

2014-02-19meta-author
4″CZ Prime Silicon Wafer-2

PAM XIAMEN offers 4″CZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm, p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm, TTV<5µm, Bow<30µm, Warp<30µm, Both-sides-polished, SEMI Flat (one), Sealed in Empak or equivalent cassette. For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and [...]

2019-07-05meta-author
Au – Gold Single Crystal & Substrate

PAM XIAMEN offers Gold Single Crystal & Substrate. PAM XIAMEN grows Gold single crystal along <111> direction upto 20 mm diameter by Modified bridgman method. The Gold single crystal subsrtae is cut from the Gold ingot and polished to 30A surface roughness. Au (Gold) [...]

2019-05-08meta-author
Systematic studies of Si and Ge hemispherical concave wafers prepared by plastic deformation

Systematic studies of Si and Ge hemispherical concave wafers prepared by plastic deformation   Si and Ge hemispherical concave wafers can be prepared by plastic deformation using Si and Ge single- and polycrystal wafers. Deformation regions in which such Si and Ge hemispherical wafers can be [...]

2014-12-02meta-author , ,
Bi2Se3

PAM XIAMEN offers high-quality Bi2Se3. Molar mass:   654.8 g/mol  Appearance:  Dull grey Lattice Parameters:  a=4.14 A,  c=28.7 A Density: 6.82 g/cm^3 Melting point:710 °C (1,310 °F; 983 K) Structure: Hexagonal Displaying products 1 – 1 of 1 results Bi2Se3 Single crystal (0001) orn. 10x10x1.0 mm, both sides polished [...]

2019-04-17meta-author
Indium Antimonide (InSb)Single Crystal Substrates

Indium Antimonide (InSb) Single Substrates Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) offers InSb crystal wafer up to 3″ in diameter that are grown by a modified Czochralski method from highly purified, zone refined polycrystalline ingots. 1)2″InSb Orientation：(100) Type/Dopant:N/undoped Diameter:50.8mm Thickness:300±25µm;500um Nc:<2E14a/cm3 Polish:SSP 2)2″InSb Orientation：(100) Type/Dopant:N/Te Diameter:50.8mm Carrier Concentration: 0.8 – 2.1 x 1015 cm-3 Thickness:450+/- 25 [...]

2016-01-14meta-author