The co-precipitation of Si and SiC quantum dots (QDs) in Si-rich silicon carbide (Si-rich SiC) films with n-type and p-type dopants is preliminarily demonstrated with low-temperature plasma enhanced chemical vapor deposition and high-temperature annealing. With specific hydrogen-free recipe of argon diluted silane (SiH4) and [...]
PAM XIAMEN offers ZnO thin film on Sapphire.
ZnO Film (0.5 um) on Sapphire(0001), 10x10x0.5mm,1sp , undoped
ZnO Film (0.5 um) on Sapphire(0001), 5x5x0.5mm ,1sp, undoped
ZnO Film on Sapphire(0001), 2″x0.5mm, undoped , ZnO: 0.5 um
For more information, please visit our website: https://www.powerwaywafer.com, [...]
PAM XIAMEN offers SiO2 (single crystal quartz).
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.
Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
Hyung Koun Cho∗
Department of Metallurgical Engineering, Dong-A University, Busan 604-714
Jeong Yong Lee
Department of Materials Science and Engineering,
Korea Advanced Institute of Science and Technology, Daejon 305-701
We have investigated the formation of V-shaped pits in nitride films such as InGaN/GaN and AlGaN/GaN grown on sapphire substrate [...]
PAM XIAMEN offers 4″FZ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm,
FZ Intrinsic undoped Si:-±0.5°, Ro > 10,000 Ohmcm,
TTV<5μm, Bow<20μm, Warp<30μm,
One-side-Epi-Ready-polished, back-side etched, SEMI Flats,
Sealed in Empak or equivalent cassette,
For more information, please visit our [...]
PAM-XIAMEN, a leading SiC epitaxial wafer manufacturer, can offer 4H SiC epitaxial wafers for MOS fabrication, which refer to a single crystal film(epitaxial layer) with certain requirements and the same crystal growing on a silicon carbide substrate. The SiC epitaxial wafer market size is [...]