Highlights
•GaSb p–i–n diodes were grown on Si and GaAs using interfacial misfit (IMF) arrays.
•Transmission electron microscopy images revealed arrays of 90° misfit dislocations.
•Threading dislocation densities of around View the MathML source were found in each case.
•Lower dark currents and higher quantum efficiency was found [...]
PAM XIAMEN offers CeO2 Epi Film on YSZ.
CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm
Epitaxial thin Film Composition
<100> CeO2
Epitaxial Film Thickness
40 nm +/- 10 nm
Growth method
Spin coating
Epitaxial FWHM
< 5 o
Substrate
<100>, YSZ, 10x10x0.5 mm, one side polished
CeO2 Film (40 nm one side) on YSZ [...]
2019-04-19meta-author
PAM XIAMEN offers 8″CZ Prime Silicon Wafer-2
8″ Silicon Wafer
CZ, <111>,
thickness 1.0 mm,
p-type
resistivity 1-80ohm.cm,
warp < 50 um,
single side polished
For more information, send us email at [email protected] and [email protected]
2021-03-16meta-author
Triple-junction solar cells
We are running GaInP/GaAs/Ge triple-junction cells fabricated by a MOCVD technique and made of high-quality III-V compounds materials that deliver significantly high efficiency.Compared with conventional solar cells, multi-junction solar cells are more efficient but also more expensive to manufacture. Triple-junction cells are [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:
Frequency Comb Generation From Stimulated Brillouin Scattering and Semiconductor Laser Diodes
Published by:
(Electrical Engineering) in The [...]
2019-10-31meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer-6
N Type/Phosphorus doped
Orientation (111)
Thickness 400±10μm
Resistivity 2000-5000Ωcm
Flat one 47.5 ± 2.5, <110> ±1°
TTV≤15μm
Bow/Warp ≤20μm
FLATNESS(FPD)≤5μm
Front Side: Chemical Mechanical
Polished
Back side: Damaged, with SiO2/Al2O3
Particle ≤10 @≥0.3㎛
For more information, send us email at [email protected] and [email protected]
2021-03-18meta-author
