Abstract
The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately [...]
2017-09-05meta-author
PAM XIAMEN offers nitride coated silicon wafers.
Stoichiometric LPCVD Nitride on Silicon Wafer Specification
Thickness range: 100Å – 4500Å
Sides processed: Both
Refractive index: 2.00 +/-.05 @632nm
Film stress: >800MPa Tensile Stress
Wafer size: 1″ -12″inches
Temperature: 800C°
Gases: Dichlorosilane, Ammonia
Equipment: Horizontal vacuum furnace
Nitride
LPCVD
PECVD
[...]
2019-02-11meta-author
Assessment of the overall resource consumption of germanium wafer production for high concentration photovoltaics
The overall resource requirements for the production of germanium wafers for III–V multi-junction solar cells applied in concentrator photovoltaics have been assessed based on up to date process information. By employing [...]
PAM XIAMEN offers YSGG single crystal.
PAM XIAMEN is developing a series of doped GGG single crystal for nest generation Magneto-optical device.
Composition
GGG
YSGG
S-GGG(CaMgZr:GGG)
NGG
GYSGG
GSGG
(Cubic)
Gd3Ga5O12
Y3Sc2Ga3O5
Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12
Nd3Ga5O12
Gd0.63Y2.37Sc2Ga3O12
Gd3Sc2Ga3O12
Lattice constant
12.376 Å
12.426 Å ,
12.480 Å
12.505Å
12.507 Å ,
12.554 Å ,
Diffraction(2θ)
51º7′
50º44′
50º43′
50º41′
50º40′
50º22′
Melting Point
~1800 oC
~1877℃
~1730 oC
~1550 oC
~1730 oC
~1730 oC
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [...]
2019-05-21meta-author
Abstract
A 16-channel front-end readout application-specific integrated circuit (ASIC) with linearity enhancement design for cadmium zinc telluride (CdZnTe) detectors is presented in this paper. The resistors in the slow shaper are realized using a high-Z circuit to obtain constant resistance value instead of using only [...]
2017-10-30meta-author
Defects of Silicon Carbide can bring about different natures, and these natures often need to be avoided. However, they have a positive effect in using. The representative utilization of the defects is a variety of point defects of silicon carbide.
What Are Point Defects of [...]
2021-03-30meta-author