CZT High Resolution Pixel Detector

PAM-PA01 series are pixel electrode structured detectors based on CZT crystal. They can detect X-ray, γ-ray and imaging. They have a high energy and space resolution.

1. Specification of CZT High Resolution Pixel Detector

Material	CdZnTe
Density	5.8g/cm3
Volume resistance	>1010Ω.cm
Dimensions	10.0×10.0mm2
Thickness	2.0mm	5.0mm
Pixel size	1.1×1.1mm2
Pixel array	8×8
Electrode material	Au
Operation temperature	-20℃-+40℃
Energy range	20KeV~700MeV	20KeV~700MeV
Energy resolution(22℃)	<6%@59.5KeV	<4.5%@122KeV
		<3%@662KeV
Defective pixel(DP)	10℃~40℃
Storage temperture	20%-80%
Remarks	Customized available

2. Spectrum of CZT Pixel Electrode Structured Detector

3. Features of CZT Detector with High Resolution Pixel

Long-time stability
High energy resolution
High space resolution
Room temperature working

4. CdZnTe High Resolution Pixel Detector Applications

Homeland security
Space detection
Nuclear science & technology
Defect detection
Portable imaging probe

For more information, please contact us email at [email protected] and [email protected].

2019-04-24

Related Posts

Test grade silicon wafers-1

PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 1 180 ± 5.0 °, 18.00 ± 2.00 mm 0.0 ± 1.0 ° 0.010 – 0.020 Ohmcm 100.0 ± 0.5 mm 340 ± 10 µm 2 4 DSP Antimony N+ 100 32,5 [...]

2019-02-25meta-author

Chemical Mechanical Polishing on Silicon Carbide

After the growth, the silicon carbide single crystal is crystal ingot with surface defects, which cannot be directly used for epitaxy. Therefore, it requires chemical mechanical polishing on silicon carbide. Among the processing skills, spheronization makes the crystal ingot into a standard cylinder; wire [...]

2021-04-02meta-author

On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title:On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide Published by: Jun-Feng Wang ; Qiang Li ; Fei-Fei Yan ; He [...]

2019-12-02meta-author

Gallium Arsenide(GaAs) Wafer with High Mobility

PAM-XIAMEN, one of leading gallium arsenide wafer manufacturers, can offer Gallium Arsenide(GaAs) wafer with high mobility. Normally mobility of n type/Si doped GaAs is above 1000cm2/V.s, mobility of p type/Zn doped GaAs is above 50~120cm2/V.s,and mobility of undoped GaAs is require to above 3500cm2/V.s, [...]

2020-03-06meta-author

2″ Silicon Wafer-9

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [110] 2″ 250 P/E FZ ~50 PF<111> SF 134° n-type Si:P [110] 2″ 900 P/E FZ 50-100 1 F @ <111> only n-type Si:P [110] 2″ 280 P/P FZ 16-30 1 F @ <111> only n-type Si:P [110] 2″ 1000 P/P FZ 15-18 1 F @ <1,-1,0> n-type Si:P [100] 2″ 300 P/P FZ 1,000-1,600 SEMI Prime n-type Si:P [100] 2″ 300 P/P FZ 600-1,200 SEMI Prime, n-type Si:P [100] 2″ 2000 P/E FZ >600 SEMI Prime, , Individual cst n-type Si:P [100] 2″ 200 P/P FZ 500-1,500 SEMI Prime, n-type Si:P [100] 2″ 300 P/E FZ >300 SEMI Prime, n-type Si:P [100] 2″ 500 P/P FZ >200 SEMI Prime, n-type Si:P [100] 2″ 300 P/P FZ 50-110 SEMI Prime, n-type Si:P [100] 2″ 280 P/P FZ 20-70 SEMI Prime, n-type Si:P [100] 2″ 300 P/E FZ 10-40 SEMI Prime n-type [...]

2019-03-07meta-author

2″ FZ Intrinsic Si Wafer SSP

PAM XIAMEN offers 2″ FZ Intrinsic Si Wafer SSP 2″ FZ Intrinsic Si Wafer SSP 2″ FZ (100) intrinsic, SSP wafer Si FZ (100) dia 2’’ x 280µm intrinsic R > 20,000 ohm.cm one side polished with SEMI Std flats Roughness<0.5nm For more information, [...]

2021-01-08meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.