PAM XIAMEN offers 950nm laser diode wafers.
composition
thickness
PL
dopping
GaAs
~150nm
C,P=1E20
AlGaAs
~1.8um
C
InGaAs
925~935nm
AlGaAs
~3.5um
Si
GaAs substrate
350um
N=0.8-4E18
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and [...]
2019-03-13meta-author
PAM XIAMEN offers LD Bare Bar for 1470nm@cavity 2mm.
Brand: PAM-XIAMEN
Wavelength: 1470nm
Filling Factor: 19%
Output Power: 25W
Cavity Length:2mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
A Plane Si-GaN Freestanding GaN Substrate
PAM-XIAMEN offers A Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN A-SI
Dimension
5 x 10 mm2
Thickness
380+/-50um
Orientation
A plane (11-20) off angle toward M-axis 0 ±0.5°
A plane (11-20) off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
> 10 6Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-17meta-author
PAM XIAMEN offers InAs Indium Arsenide Single Crystal.
Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaicphotodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium [...]
2019-03-12meta-author
Ultra Thin GaAs Wafer
PAM-XIAMEN offers Ultra Thin GaAs Wafer with both side polished. PAM190709-GAAS with n type and undoped as follows:
N type Ultra Thin GaAs Wafer
Item
Parameter
Spec
Sample Data
Unit
1
Growth method
VGF
VGF
—
2
Diameter
50.6土0.2
50.6士0.2
mm
3
Type-Dopant
N/Si
N/SI
—
4
Resistivity
(0.8-9.0)E-3
(1.78-5.69)E-3
Ohm.cm
5
Mobility
21500
1592-2327
cm’/v.s
6
Carrier Concentration
(O.4-4.0)E18
(O.47-4.00)E18.
/cm3
7
EPD
≦S5000
≦65000
/cm’
8
Crystal orientation
(100)29+/-0.50off
《100).29+/-0.59off
degree
toward-<111>A0≈0°
toward<1112Aa=o。
9
Primary flat Orientation
E(0-1-1)+/-0.50
E(0-1-1)+0.50
degree
Length
17+/-1.0
17+/-1.0
mm
10
Secondary flat Orientation
E(0-11)0.5°
ED(O-11)+0.5°
degree
Length
7+/-1.0
7+/-1.0
mm
11
Thickness
110+/-15
110+/-15
um
12
Front Side Surface
Polished
Polished
—
13
Back Side Surface
Polished
Polished
—
14
TV
N/A
N/A
um
15
Bow
N/A
N/A
um
16
warp
N/A
N/A
um
Ultra Thin GaAs Wafer
Undoped Ultra Thin [...]
2020-05-14meta-author
PAM XIAMEN offers KH2PO4 crystal.
KH2PO4 (100), 10x10x 1.0 mm 1 Side polished
Crystal: Monopotassium Phosphate
Orientation: <100>
Size: 10 x 10 x 0.9 mm
Polished: one side polished
Package: 1000 class clean plastic bag sealed
Applications: Monopotassium Phosphate crystal [...]
2019-05-07meta-author