CZT Multi-Pixel Photon Counting Module

MPC-32 is a multi-pixel photon counting module. It can convert consecutive X-ray into digital signal in different energy region. It can reduce noise through setting electronic threshold value, thereafter reduce the influence of noise to image. Compared with traditional pseudo-dual energy, the five energy regions can be readout simultaneously and differently. They are highly accuracy.

1. CZT Multi-Pixel Photon Counting Module Specification

Power dissipation	150mW/module
Power supply	DC:2.5 ~ 5V
Operation temperature	+25 ~ +35℃
High-voltage	DC:-450V ~ -600V
Crystal type	16.74.42.0mm3 Linear array CZT detector
Signal output	SPI
Energy range	20KeV ~160KeV
Time of peak	100ns
Splice length	Customized according to requests
Pixel size	1mm,Customized available
Counting rate	≥1.0Mcps/pixel(30℃)
Sampling frame rate	≤2000FPS
Energy areas	1~5 energy areas
Dimension	70×33.4×17 mm3/module

Image Sample

2. Features of CZT Module with Multi-Pixel Photon Counting

Dedicated ASIC
High-efficiency
Room temperature working
Multi energy area
Free splicing

3. Multi-pixel Photon Counting Module Applications

Defect detection
Security Screening
DXA
Food safety detecting

For more information, please contact us email at [email protected] and [email protected].

2019-04-24

Related Posts

YTTRIUM STABILIZED ZIRCONIA (YSZ) SINGLE CRYSTAL SUBSTRATES

PAM XIAMEN offers Yttrium Stabilized Zirconia (YSZ) Single Crystals Substrate. Main Parameters Crystal structure M3 Unit cell constant a=5.147 Å Melt point（℃） 2700 Density（g/cm3） 6 Hardness 8-8.5（mohs） Purity 99.99% Thermal expansion（/℃） 10.3×10-6 Dielectric constants ε=27 Growth method arcs Size 10×3，10×5，10×10，15×15，，20×15，20×20 dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm Thickness 0.5mm，1.0mm Polishing Single or double Crystal orientation <001>±0.5º redirection precision ±0.5° Redirection the edge: 2°（special in 1°） Angle of crystalline Special size and orientation are available upon [...]

2019-03-15meta-author

3″ Silicon Wafer-11

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [111] 3″ 300 P/P 0.3-0.4 SEMI Prime p-type Si:B [111] 3″ 250 P/E 0.10-0.12 SEMI Prime p-type Si:B [111] 3″ 300 P/E 0.03-0.04 SEMI Prime p-type Si:B [111] 3″ 380 P/E 0.014-0.015 SEMI Prime p-type Si:B [111-1°] 3″ 1000 P/E 0.014-0.016 SEMI Prime p-type Si:B [111] 3″ 600 P/P 0.005-0.020 SEMI Prime p-type Si:B [111-3.5°] 3″ 380 P/E 0.004-0.005 SEMI Prime n-type Si:P [510] 3″ 1000 P/E/P 5-10 Prime, NO Flatst n-type Si:P [100] 3″ 9500 P/E 15-22 SEMI Prime, Individual cst n-type Si:P [100] 3″ 300 P/E 10-20 SEMI Prime n-type Si:P [100] 3″ 380 P/E 10-20 SEMI Prime n-type Si:P [100] 3″ 3000 P/E/P 10-12 Prime, NO Flats, Individual cst n-type Si:P [100] 3″ 1000 P/E 6-10 Prime, NO Flatst n-type Si:P [100] 3″ 1500 P/E 5-7 SEMI Prime n-type Si:P [100] 3″ 300 P/P 1-20 SEMI Prime n-type Si:P [100] 3″ 345 P/P 1-100 SEMI n-type Si:P [100] 3″ 350 P/P 1-25 SEMI Prime, TTV<1μm, Empak cst n-type [...]

2019-03-06meta-author

Evidence for Deep Acceptor Centers in Plant Photosystem I Crystals

We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title:Evidence for Deep Acceptor Centers in Plant Photosystem I Crystals Published by: Irina Volotsenko ; Michel Molotskii ; Anna Borovikova ; Nathan [...]

2019-12-09meta-author

Al2O3 (Sapphire)-2

Al2O3 (Sapphire) PAM XIAMEN offers high-quality Al2O3 (Sapphire) with C-Plane (0001) orientation at different size from 5 x 5mm2 to 4”diameter: 1 square Al2O3 substrate 5x5mm,10x10mm&0.25″x0.25″ Al2O3 Sapphire Wafer, C-plane (0001), 5x5x0.5mm, 1sp – ALC=> PAM Al2O3 Sapphire Wafer, C-plane (0001), 5x5x0.5mm, 2sp – ALC=> PAM Al2O3- Sapphire Wafer, [...]

2019-04-16meta-author

6″ FZ Silicon Wafer-6

PAM XIAMEN offers 6″ FZ Silicon Wafer-6 N Type/Phosphorus doped Orientation (111) Thickness 400±10μm Resistivity 2000-5000Ωcm Flat one 47.5 ± 2.5, <110> ±1° TTV≤15μm Bow/Warp ≤20μm FLATNESS(FPD)≤5μm Front Side: Chemical Mechanical Polished Back side: Damaged, with SiO2/Al2O3 Particle ≤10 @≥0.3㎛ For more information, send us email at [email protected] and [email protected]

2021-03-18meta-author

Main-amplifier

PAM-02A is an amplifier which used for shaping and amplifying signals comes from scintillation detector, proportional counter and semiconductor detector. PAM-02A integrates amplifier circuit and SK shaping circuit. With ordered cable, it can direct pulse signal which comes from amplifier into multi-channel pulse analyzer. 1. [...]

2019-04-25meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.