(LT-GaAs)Experimental Results
PAM XIAMEN offers Low Temperature GaAs.
Preparation for pump & probe measurement
Reflectance spectra measurement ： we could not observe the reflectance peak.
PL spectra measurement ： PL spectra were observed between 810 and 845 nm.
Pump & probe measurement (10 K)
・We have observed 0.6-1.6 picosecond decay [...]
2019-03-15meta-author
Sublimation epitaxy under vacuum (SEV) was investigated as a method for growing 4H-SiC epitaxial structures for p–i–n diode fabrication. The SEV-grown 4H-SiC material was investigated with scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction, photo-luminescence spectroscopy (PL), cathodo-luminescence (CL) spectroscopy, photocurrent method [...]
2019-12-02meta-author
SiC-On-SiC Epi Wafer For Pin-Diodes
PAM-XIAMEN offers SiC-on-SiC epi wafer for pin-diodes as follows:
pin-diodes structure 1: SiC-on-SiC epi-wafer PAM060320-SIC
p+[Al]: 5 µm, gradient doping, Na-Nd = 5*10^18 – 1*10^20 ± 50% cm-3
p[Al]: 20 µm, Na-Nd = 4.9*10^15 cm-3
n+[N]: 2 µm, Na-Nd = 5*10^18 ± 25% cm-3
substrate: [...]
2020-08-04meta-author
What is silicon made of?
Silicon is made from silicon dioxide, or silica – found in nature as quartz, or common beach sand.
First, the silica is put into a Silicon Furnace, where a carbon electrical arc reacts at high temperatures to drive the oxygen out [...]
PAM XIAMEN offers high-quality AlN Single Crystal Substrate& Template.
AlN Ceramic Substrates
AlN ceramic substrates are fabricated by tape casting technology. Its thermal conductivity is 4-5 times higher than Al2O3. It is an ideal substrate for electronic thick and thin film applications.
[...]
2019-04-16meta-author
Product Specifications
PAM XIAMEN offers LED Epiwafer.
GaN on Al2O3-2” epi wafer Specification
White： 445～460 nm
Blue： 465～475 nm
Green：510～530 nm
1. Growth Technique – MOCVD
2.Diameter: 50.8mm
3.Substrate material: Patterned Sapphire Substrate(Al2O3)
4.Pattern size: 3X2X1.5μm
5.Structure:
Structure layers
Thickness(μm)
p-GaN
0.2
p-AlGaN
0.03
InGaN/GaN(active area)
0.2
n-GaN
2.5
u- GaN
2
Al2O3 (Substrate)
430
6.Parameters to make chips:
Item
Color
Chip Size
Characteristics
Application
PAM1023A0
Blue
10mil x 23mil
Vf = 2.8~3.4V
Po = 18~25mW
Wd = 450~460nm
Lighting
LCD backlight
Mobile [...]
2019-03-15meta-author
