Osram Laboratory Reports 142 lm/W Efficiency Record for Warm White LED Light Source
March 15, 2011…Osram Opto Semiconductors reports that it has set a new laboratory record of 142 lm/W for the efficiency of a warm white LED light source. The LED with a correlated [...]
2012-03-06meta-author
PAM XIAMEN offers Single crystal YVO4.
YVO4 is an excellent birefringent crystal for fiber optics applications. As substrate, it can replace TiO2 for lower cost and better quality in many cases
Crystal
Birefr-ingence D=he-ho
Refractive index h atl= 0.63m
Thermooptical Coef.dh/dT106/K
Structure lattice constant (A)
Melting point oC
Density g/cm3
Hard-ness (Moh)
Thermal Coef. 10-6/K
YVO4
0.222
ho=1.9929
he=2.2154
a: [...]
2019-05-21meta-author
PAM XIAMEN offers GGG single crystal.
Composition
GGG
YSGG
S-GGG(CaMgZr:GGG)
NGG
GYSGG
GSGG
Lattice constant
12.376 Å
12.426 Å
12.480 Å
12.505Å
12.507 Å
12.554 Å
Diffraction(2θ)
51º7′
50º44′
50º43′
50º41′
50º40′
50º22′
Melting Point
~1800 oC
~1877℃
~1730 oC
~1550 oC
~1730 oC
~1730 oC
GGG, (111), 5x5x0.5mm, 1sp
GGG, (100), 5x5x0.5mm, 1sp
GGG, (100), 5x5x0.5mm, 2sp
GGG, (110), 5x5x0.5mm, 1sp
GGG (111), 10x10x0.5mm, 2sp
GGG, (111), 10x10x0.5mm, 1sp
GGG, [...]
2019-04-26meta-author
PAM XIAMEN offers SiO2 (single crystal quartz).
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.
Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
2019-05-15meta-author
PAM XIAMEN offers Photographic Film.
Various Technical Parameters
Max plotted area
24″*35″
Thickness
0.18mm
Resolution
6000dpi、1200dpi、1600dpi、2500dpi
Positioning accuracy
±10μm
Repetitive accuracy
±3μm
Min Critical Dimension
25μm at 6000 and 12000dpi
12μm at 16000 and 25000dpi
CD Tolerance
Control ±3μm or ±4μm
Main application areas:
LCD, PCB, VFD, BGA, FPC and other industries
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-07-04meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110]
2″
2000
P/P
1-10
1 F @ <1,-1,0>
p-type Si:B
[110]
2″
350
P/E
0.1-1.0
PF<111> SF 109.5°
p-type Si:B
[110]
2″
280
P/P
0.080-0.085
PF<111> SF 109.5°
p-type Si:B
[100]
2″
500
P/P
1,300-8,000
SEMI Prime
p-type Si:B
[100]
2″
500
P/P
1,300-2,600
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
FZ 510-1,200
SEMI Prime
p-type Si:B
[100]
2″
300
P/P
~150
SEMI Prime
p-type Si:B
[100]
2″
300
P/P
90-120
SEMI Prime
p-type Si:B
[100]
2″
300
P/P
70-80
SEMI Prime
p-type Si:B
[100]
2″
1400
P/P
6-8
Prime, NO Flats
p-type Si:B
[100]
2″
1500
P/P
6-8
Prime, NO Flats
p-type Si:B
[100]
2″
3000
P/E
6-8
Prime, NO Flats, Individual cst
p-type Si:B
[100]
2″
3000
P/E
4.9-5.3
Prime, NO Flats, Individual cst
p-type Si:B
[100]
2″
300
P/E
1-10
SEMI Prime
p-type Si:Ga
[100]
2″
350
P/P
1-5
SEMI Prime
p-type Si:B
[100]
2″
500
P/E
1-2
SEMI [...]
2019-03-07meta-author