CZT Probe-2

PAM-01A series are planar CZT crystal based detector which is super small. With high sensitive CZT crystal and low noise charge sensitive amplifier built in, they can detect energy spectrum of X-ray and low energy γ-ray in a high resolution.

Cooperated with ordered LEMO cable and NIM machine, it will be very easy to detecting low energy spectrum for laboratory.

Specification

Dimension Φ17×79mm
Power 0.3W
Powered by ±12V
High voltage input +300V
Operating temperature -20℃~40℃
Crystal type Planar CZT detector 5*5*2mm3
Interface LEMO Five-pin plug
Energy range 10KeV(Beryllium window)~150KeV for energy spectrum measurement
30KeV~1.5MeV for doses measurement
Energy resolution <6.5%FWHM@59.54KeV,25℃
Remarks Customized available

 

Spectrum

 

 

 

 

 

 

 

 

 

Features
Portable & user friendly
Room temperature working
High energy resolution
Quick response
Long-time stability
Low noise

Applications
Homeland security
Anti-terrorism
Energy spectrum detecting
Nuclear science and research
Defect detection
Food safety detecting
Environment monitoring

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

2019-04-24

Share this post

Related Posts

GaN on Sapphire for Power

PAM XIAMEN offers GaN on Sapphire for Power. 1.1 GaN HEMT Structure on Sapphire for Power Application Wafer size 2”, 3”, 4”, 6” AlGaN/GaN HEMT structure Refer 1.2 Carrier density 6E12~2E13 cm2 Hall mobility / XRD(102)FWHM ~arc.sec XRD(002)FWHM ~arc.sec Sheet Resistivity / AFM RMS (nm）of 5x5um2 <0.25nm Bow(um) <=35um Edge exclusion  <2mm SiN passivation layer  0~30nm Al composition 20-30% In composition 17% for InAlN GaN cap / AlGaN/(In)AlN barrier / AlN interlayer / GaN channel / C [...]

2019-05-17meta-author
Lumenpulse Launches New Range of LED Architectural Downlights and Spotlights

Lumenpulse Launches New Range of LED Architectural Downlights and Spotlights Lumenpulse (LMP.TO), a leading pure-play specification-grade LED lighting solutions provider, has launched Lumenalpha, an exceptional range of architectural downlights and spotlights, which sets new standards in performance, light quality, flexibility and lifetime. Available worldwide, the collection boasts over [...]

2016-09-26meta-author
Large CZT Spectrum Probe

PAM-01C2 is a hemisphere CZT based probe in a super small size. It can detect X-ray and low energy γ-ray in a high resolution. PAM-01C2 integrated customized CZT crystal and low noise charge sensitive preamplifier circuit. It can convert X/γ-ray into exponential decay signals. [...]

2019-04-23meta-author
3″ Silicon Wafer-1

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] ±0.5° 3″ 325 P/E FZ 100-200 SEMI Prime p-type Si:B [100] 3″ 380 P/E FZ 7,000-10,000 SEMI Prime p-type Si:B [100] 3″ 350 P/P FZ 1-5 SEMI Prime p-type Si:B [100] 3″ 160 ±10 P/P FZ 0.5-10.0 SEMI Tes, Soft cst, Scratched, unsealed defects. Can be repolished for additional fee p-type Si:B [100] 3″ 890 ±13 P/P FZ 0.5-10.0 SEMIt, TTV<8μm p-type Si:B [111] ±0.5° 3″ 380 P/E FZ 8,000-10,000 SEMI TEST (has scratches), in hard cst p-type Si:B [111] ±0.5° 3″ 475 P/E FZ >4,400 SEMI Prime, TTV<5μm p-type Si:B [111] ±0.25° 3″ 400 P/E FZ >100 SEMI Prime n-type Si:P [100] 3″ 380 P/P FZ 7,000-18,000 SEMI Prime n-type [...]

2019-03-06meta-author
4″ Si wafer Thickness:500±20μm

PAM XIAMEN offers 4″ Si wafer Thickness:500±20μm. 4″ Si wafer 4″ Si, N-type, <100>, SSP resistivity3000-4000Ωcm thickness500±20μm carrier lifetime>1ms(1000μm) For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) [...]

2019-08-22meta-author
Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics

Epitaxial lift-off process enables the separation of III–V device layers from gallium arsenidesubstrates and has been extensively explored to avoid the high cost of III–V devices by reusing the substrates. Conventional epitaxial lift-off processes require several post-processing steps to restore the substrate to an epi-ready [...]

2015-11-02meta-author ,