CZT Probe

CZT Probe(CZT Detector with Preamplifier)

PAM-01C1 integrated customized hemispherial electrode CZT detector and low noise charge sensitive preamplifier. It can convert X/γ-ray into exponential decay signal. Working with five-pin cable, high and low power supply, main amplifier，those signals will be direct into multi-channel pulse analyzer and then the energy spectrum will be formed.

1. Specification of CZT Detector with Preamplifier

Power	0.3W
Power supply	±12W
Output impedance	50Ω
Operating temperature	-20℃-+40℃
High voltage	DC [email protected]×5.5×2.75mm3CZT
	DC [email protected]×10×5mm3CZT
Crystal type	10105mm3/5.55.52.75mm3Asymmetry CZT detecor
Signal output	Exponential decay signal, Tr<150ns
Interface	Five-pins plug
Energy range	10KeV(Beryllium window)~2.6MeV
Energy resolution	<3%@662KeV,25℃
INL (Integral Nonlinearity)	10KeV~1.3MeV	<0.5%
	10KeV~2.6MeV	<1.0%
Peak drift	0℃~40℃	<0.05%/℃
	-20℃~0℃	<0.2%/℃
Peak drift under 8h	<0.2%
Dimension	Φ30.5×73mm2
Weight	55g

2.Spectrum of CZT Detector with Preamplifier

3. Features of CZT Detector with Preamplifier

Portable & user friendly
Room temperature working
High energy resolution
Quick response
Long-time stability

4. Applications of CZT Detector with Preamplifier

Homeland security
Anti-terrorism
Energy spectrum detecting
Nuclear science & technology
Defect detection
Food safety detecting
Environment monitoring
Medical diagnosis

For more information, please send us email at [email protected]

2019-04-23

Related Posts

300mm Silicon Wafers

PAM XIAMEN offers 12 inch silicon wafers. We have all the grades including: Prime grade 300mm silicon wafers Test grade 300mm silicon wafers Mechanical 300mm silicon wafers Reclaimed 300mm silicon wafers We can deposit the following onto our 300mm silicon wafers including: Thermal oxide, wet and dry on 300mm silicon [...]

2019-02-20meta-author

GaN substrate

What we provide: Item undoped N- Si doped N+ Semi-insulating P+ Freestanding GaN substrate yes yes yes GaN on sapphire yes yes yes yes InGaN on sapphire yes *** AlN on sapphire yes LED wafer (p+GaN/MOW/N+GaN/N-AlGaN/N+GaN/N-GaN/sapphire) Freestanding GaN substrate/GaN on sapphire/LED wafer: For specifications of Freestanding GaN substrate/GaN on sapphire/LED wafer, please view Gallium Nitride wafer: http://www.qualitymaterial.net/products_7.html InGaN on Sapphire: For specification of InGaN on sapphire template, pleas view InGaN substrate: https://www.powerwaywafer.com/InGaN-Substrates.html AlN on [...]

2019-09-24meta-author

PMN-PT CRYSTALS

PAM XIAMEN offers PMN-PT Crystals. 10 x 10 x 0.5 mm PMN-PT Piezoelectric Crystal (111) Pb(Mg1/3Nb2/3)O3-PbTiO3 SSP 10 x 10 x 0.5 mm Pyroelectric Crystal PMN-PT (111) Pb(Mg1/3Nb2/3)O3-PbTiO3 SSP 5 x 10 x 0.5 mm PMNT Electro-Optic Crystal (001) Pack SSP 5 x 10 x 0.5 mm PMNT [...]

2019-03-14meta-author

100mm (4 Inch) Silicon Wafers-4

PAM XIAMEN offers 100mm Si wafers. Please send us email at [email protected] if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2485 p–type Si:B [100] 4″ 3000 P/E 1–100 SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers PAM2486 p–type Si:B [100] 4″ 3000 P/E 1–30 SEMI, 2Flats, Individual cst PAM2487 p–type Si:B [100] 4″ 3175 P/P 1–10 SEMI Prime, 2Flats, Individual cst, TTV<8μm PAM2488 p–type Si:B [100] 4″ 3175 P/P 1–10 SEMI Prime, 2Flats, Individual cst, [...]

2019-02-19meta-author

PbTe single crystal substrate

PAM XIAMEN offers PbTe single crystal substrate.(Not sell it temporarily) Lead telluride (Phoebe) is a compound of lead and tellurium (PbTe); it is a narrow gap semiconductor. It occurs naturally as the mineral altaite. It is often alloyed with tin to make lead tin telluride, [...]

2019-05-14meta-author

150mm&200mm Silicon Wafer

PAM XIAMEN offers 150mm&200mm Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 150 N Phos CZ -100 1-20 180-200 P/P PRIME 150 N Phos CZ -100 1-100 500-550 P/P PRIME 150 N Phos CZ -100 1-100 500-600 P/E TEST 150 N Phos CZ -100 1-100 650-700 P/E/DTOx PRIME 150 N Phos CZ -100 1-100 650-700 P/E/Ni PRIME 150 N Phos CZ -100 1-20 650-700 P/E/OX PRIME 150 N Phos CZ -100 1-20 650-700 P/E/WTOx 150 P Boron CZ -100 1-20 180-200 P/P PRIME 150 P Boron CZ -100 1-100 500-550 P/P PRIME 150 P Boron CZ -100 1-100 500-600 P/E TEST 150 P Boron CZ -100 .001-.005 650-700 P/E PRIME 150 P Boron CZ -100 1-100 650-700 P/E/DTOx PRIME 150 P Boron CZ -100 1-100 650-700 P/E/Ni PRIME 150 P Boron CZ -100 1-20 650-700 P/E/OX PRIME 150 P Boron CZ -100 1-20 650-700 P/E/WTOx 150 P Boron CZ -100 1-20 950-1050 P/E PRIME 150 P Boron CZ -100 1-20 950-1050 P/P PRIME 150 Undoped VGF -100 >1E7 500-600 P/P 150 Undoped VGF -100 >1E7 500-600 P/P 150 N Si VGF -100 650-700 P/E PRIME 150 P Zn VGF -100 650-700 P/E PRIME 150 Si Undoped VGF -100 >1E7 500-600 P/P TEST 150 Si Undoped VGF -100 >1E7 500-600 P/P TEST 150 Si Undoped VGF -100 >1E7 610-660 P/P EPI 150 Si Undoped VGF -100 >1E7 650-700 P/E PRIME 150 Single Wafer Shipper ePak Lid/Base/Spring Holds1Wafer Clean Room 150 Round Single Wafer Shipper ePak Lid/Base/Spring Holds1Wafer Clean Room 150 Shipping Cassette ePak Holds25Wafers Clean Room 200 N Phos CZ -100 1-20 700-750 P/E/OX PRIME 200 P Boron CZ -100 1-100 600-800 P/E TEST 200 P Boron CZ -100 1-20 700-750 P/E/OX PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in [...]

2019-03-04meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.