PAM-XIAMEN offers 1550nm laser diode wafer, which is an epitaxial wafer of a diode laser structure emitting around 1550 nm (on InP substrate), and the wafer dimension for laser diode 1550nm can be 2” or 3”. You can fabricate a laser for your application such [...]
2019-03-13meta-author
Effects of post-growth annealing on the performance of CdZnTe:In radiation detectors with different thickness
An effective post-growth annealing method was used to improve the performance of CdZnTe:In (CZT:In) radiation detectors. The results indicated that Te inclusions in CZT:In crystals with different thickness were eliminated completely [...]
The dependence of the morphology and crystallinity of an amorphous Ge (a-Ge) interlayer between two Si wafers on the annealing temperature is identified to understand the bubble evolution mechanism. The effect of a-Ge layer thickness on the bubble density and size at different annealing [...]
2019-12-02meta-author
Silicon Epi Wafers Sale
PAM XIAMEN offers Silicon Epi Wafers.
6″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3053
6″Øx675μm
n- Si:P[100]
0.001-0.002
P/EOx
0.016
n- Si:P
0.32-0.46
n/n+
4″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3053
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
360 – 440
n/n+
PAM3054
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
6.5
p- Si:B
3.6±10%
P/P/P+
22±1.5
p- Si:B
300±50
PAM3055
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
8.1±1
p- Si:B
4.5±10%
P/P/P+
6.85±0.75
p- Si:B
0.75±0.15
PAM3056
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
10.5
p- Si:B
570±10%
p/p+
PAM3057
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.15 ±10%
P/P+
PAM3058
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.25±10%
P/P+
PAM3059
4″Øx525μm
p- Si:B[111]
0.001-0.005
P/E
20
p- Si:B
175±10%
P/P+
PAM3060
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
21
p- Si:B
150 [...]
2019-02-13meta-author
PAM-XIAMEN is able to supply epitaxial growth service for photonic crystal surface emitting laser (PCSEL), take the following epi structure for example. Also, we can do customized structure growth of PCSEL laser at any wavelength to meet your application needs. Photonic crystal surface-emitting lasers are an [...]
2023-07-20meta-author
PAM XIAMEN offers Aluminum Oxide Substrate Al2O3.
Aluminum Oxide Ceramic Substrates Porperties
Purity (wt%)
0.96
0.996
0.996
0.999
Density (g/cm3)
> 3.75
3.88
3.87
3.92
Thermal conductivity (W/m. K)
24
34.7
35
35
Thermal Expansion (x10-6/oC)
< 7.7
7~8.3
7~8.3
8.1
Dielectric Strength (Kv/mm)
> 14
23.64
23.64
8.7
Dielectric Constant (at 1MHZ)
9.8
9.9
9.9
9.8
Loss Tangent (x10-4 @1MHZ)
4
1
1
< 1
Volume Resistivity (ohm-m)
> 1013 at [...]
2019-04-18meta-author