PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
4″
500
P/E
FZ >10,000
Prime, TTV<5μm
p-type Si:B
[110] ±0.5°
4″
200
P/P
FZ 1-2
SEMI Prime
p-type Si:B
[110] ±0.5°
4″
200
P/P
FZ 1-2
Prime
p-type Si:B
[110] ±0.5°
4″
200
P/P
FZ 1-2
SEMI Prime, Extra 8 scratched wafers in cassette free of charge
p-type Si:B
[100]
4″
220 ±10
P/E
FZ >10,000
SEMI Prime
p-type Si:B
[100]
4″
230 ±10
P/E
FZ >10,000
SEMI Prime
p-type Si:B
[100-4° towards[110]] ±0.5°
4″
525
P/E
FZ >2,000
SEMI Prime, TTV<5μm
p-type Si:B
[100]
4″
450
P/P
FZ 1,000-2,000
SEMI Prime
p-type Si:B
[100]
4″
420
C/C
FZ 850-900
SEMI Prime
p-type Si:B
[100]
4″
200 ±10
P/P
FZ 100-120
SEMI Prime
p-type Si:B
[100]
4″
250
P/P
FZ 1-3 {0.97-1.01}
SEMI [...]
2019-03-05meta-author
For single photon detection technology, in addition to the traditional InP/InGaAs SPAD, new material systems such as low noise material systems constructed from Sb based digital alloys, multi multiplication InP/InGaAs SPAD using ionization engineering, and InAlAs/InGaAs SPAD have also been developed. PAM-XIAMEN can provide InP [...]
2023-07-12meta-author
PAM XIAMEN offers Si+SiO2+Pt Thin Film.
Si+SiO2+Pt Thin Film
SiO2+Pt thin film on Si (B-doped)substrate ,10x10x0.5mm,1sp (SiO2=500nm, Pt=60nm)
Silicon Wafer Specifications:
Conductive type: SiO2+Pt thin film on Si (B-doped, (100)Ori.) substrate ,10x10x0.5mm,1sp( SiO2=500nm,Pt=60nm)
Resistivity: [...]
2019-05-16meta-author
Sales of semiconductors: present and next future of the global market
“Softening demand and lingering macroeconomic challenges continued to limit global semiconductor sales in November. Despite these headwinds, the industry may narrowly surpass total annual sales from 2014 and is projected to post modest sales [...]
2016-07-12meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
FZ NTD 3″Ø ingot n-type Si:P[111] ±2°, Ro: 50-60 Ohmcm, MCC Lifetime>400μs, (2 ingots: 197mm, 277mm) SEMI
FZ 8″Ø ingot n-type Si:P[100] ±2.0°, Ro: 163-174 Ohmcm, MCC Lifetime>14581μs, (1 ingot: 83mm)
FZ 6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 Ohmcm, MCC Lifetime>1777μs,
FZ 6″Ø ingot p-type [...]
2019-03-08meta-author
Global and China GaAs-based Device Market
Distinct from traditional silicon semiconductor, gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is an III-V semiconductor and is mainly used in handset RF front end like power amplifier (PA). In the 4G era, [...]
2012-09-29meta-author