PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).
PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.
10×10 mm substrates [...]
2019-05-15meta-author
Quaternary direct bandgap compound materials, such as InGaAsP and AlGaInAs, can be grown on InP substrate, which are lattice match with InP. At present, in various fields, researchers have designed semiconductor lasers, optical amplifiers, detectors, etc., using these two types of materials grow on InP substrate. For optical [...]
2023-07-21meta-author
Development of a gate metal etch process for gallium arsenide wafers
The reactive ion etching of TiWN, which is used as a gate metal on gallium-arsenide device wafers, was studied in a parallel-plate, single-wafer plasma reactor operating at a frequency of 13.56 MHz. We discuss [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:
Non-destructive evaluation of the strain distribution in selected-area He+ ion irradiated 4H-SiC
Published by:
Subing Yang;Sakiko Tokunaga;Minako Kondo;Yuki Nakagawa;Tamaki Shibayama;
a Graduate School of [...]
2019-12-02meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
3″
325
P/E
FZ 100-200
SEMI Prime
p-type Si:B
[100]
3″
380
P/E
FZ 7,000-10,000
SEMI Prime
p-type Si:B
[100]
3″
350
P/P
FZ 1-5
SEMI Prime
p-type Si:B
[100]
3″
160 ±10
P/P
FZ 0.5-10.0
SEMI Tes, Soft cst, Scratched, unsealed defects. Can be repolished for additional fee
p-type Si:B
[100]
3″
890 ±13
P/P
FZ 0.5-10.0
SEMIt, TTV<8μm
p-type Si:B
[111] ±0.5°
3″
380
P/E
FZ 8,000-10,000
SEMI TEST (has scratches), in hard cst
p-type Si:B
[111] ±0.5°
3″
475
P/E
FZ >4,400
SEMI Prime, TTV<5μm
p-type Si:B
[111] ±0.25°
3″
400
P/E
FZ >100
SEMI Prime
n-type Si:P
[100]
3″
380
P/P
FZ 7,000-18,000
SEMI Prime
n-type [...]
2019-03-06meta-author
PAM XIAMEN offers CeO2 Epi Film on YSZ.
CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm
Epitaxial thin Film Composition
<100> CeO2
Epitaxial Film Thickness
40 nm +/- 10 nm
Growth method
Spin coating
Epitaxial FWHM
< 5 o
Substrate
<100>, YSZ, 10x10x0.5 mm, one side polished
CeO2 Film (40 nm one side) on YSZ [...]
2019-04-19meta-author